Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
OB2051V

OB2051V

OB2051/UNCASED/NO MARK*CHIPS O

WeEn Semiconductors
3,843 -

RFQ

Tube RoHS - - Active - - - - - - - -
OB2052V

OB2052V

OB2052/UNCASED/NO MARK*CHIPS O

WeEn Semiconductors
3,556 -

RFQ

Tube RoHS - - Obsolete - - - - - - - -
WNSC6D06650Q

WNSC6D06650Q

SILICON CARBIDE SCHOTTKY DIODE I

WeEn Semiconductors
3,000 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 327pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 6A 175°C 1.4 V @ 6 A
BYC30WT-600PQ

BYC30WT-600PQ

DIODE GEN PURP 600V 30A TO247-3

WeEn Semiconductors
2,928 -

RFQ

BYC30WT-600PQ

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 22 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 2.75 V @ 30 A
NXPSC106506Q

NXPSC106506Q

DIODE SCHOTTKY 650V 10A TO220AC

WeEn Semiconductors
3,000 -

RFQ

NXPSC106506Q

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 300pF @ 1V, 1MHz 0 ns 250 µA @ 650 V 650 V 10A 175°C (Max) 1.7 V @ 10 A
NXPSC10650X6Q

NXPSC10650X6Q

DIODE SCHOTTKY 650V 10A TO220F

WeEn Semiconductors
3,000 -

RFQ

NXPSC10650X6Q

Ficha técnica

Bulk RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 300pF @ 1V, 1MHz 0 ns 250 µA @ 650 V 650 V 10A 175°C (Max) 1.7 V @ 10 A
BYC75W-1200PQ

BYC75W-1200PQ

STANDARD MARKING * HORIZONTAL, R

WeEn Semiconductors
2,890 -

RFQ

BYC75W-1200PQ

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 85 ns 250 µA @ 1200 V 1200 V 75A 175°C (Max) -
NXPSC04650X6Q

NXPSC04650X6Q

DIODE SCHOTTKY 650V 4A TO220F

WeEn Semiconductors
2,998 -

RFQ

NXPSC04650X6Q

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 130pF @ 1V, 1MHz 0 ns 170 µA @ 650 V 650 V 4A 175°C (Max) 1.7 V @ 4 A
BYC30-600P,127

BYC30-600P,127

DIODE GEN PURP 600V 30A TO220AC

WeEn Semiconductors
2,208 -

RFQ

BYC30-600P,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 600 V 600 V 30A 175°C (Max) 1.8 V @ 30 A
WNSC2D151200WQ

WNSC2D151200WQ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors
1,900 -

RFQ

WNSC2D151200WQ

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 700pF @ 1V, 1MHz 0 ns 150 µA @ 1200 V 1200 V 15A 175°C 1.7 V @ 15 A
NXPSC126506Q

NXPSC126506Q

SILICON CARBIDE POWER DIODE

WeEn Semiconductors
2,984 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 380pF @ 1V, 1MHz 0 ns 80 µA @ 650 V 650 V 12A 175°C (Max) 1.7 V @ 12 A
WNSC6D08650Q

WNSC6D08650Q

SILICON CARBIDE SCHOTTKY DIODE I

WeEn Semiconductors
3,000 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 402pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 8A 175°C 1.4 V @ 8 A
WNSC2D10650XQ

WNSC2D10650XQ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors
2,995 -

RFQ

WNSC2D10650XQ

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 310pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 10A 175°C 1.7 V @ 10 A
NXPSC16650B6J

NXPSC16650B6J

SILICON CARBIDE POWER DIODE

WeEn Semiconductors
3,196 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 534pF @ 1V, 1MHz 0 ns 100 µA @ 650 V 650 V 16A 175°C (Max) 1.7 V @ 16 A
WNSC6D20650WQ

WNSC6D20650WQ

SILICON CARBIDE SCHOTTKY DIODE I

WeEn Semiconductors
1,180 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1.2nF @ 1V, 1MHz 0 ns 100 µA @ 650 V 650 V 20A 175°C 1.4 V @ 20 A
WNSC10650WQ

WNSC10650WQ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors
1,190 -

RFQ

WNSC10650WQ

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 328pF @ 1V, 1MHz 0 ns 60 µA @ 650 V 650 V 10A 175°C 1.7 V @ 10 A
NXPSC08650B6J

NXPSC08650B6J

DIODE SCHOTTKY 650V 8A D2PAK

WeEn Semiconductors
3,175 -

RFQ

NXPSC08650B6J

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 260pF @ 1V, 1MHz 0 ns 230 µA @ 650 V 650 V 8A 175°C (Max) 1.7 V @ 8 A
NXPSC10650D6J

NXPSC10650D6J

DIODE SCHOTTKY 650V 10A DPAK

WeEn Semiconductors
7,440 -

RFQ

NXPSC10650D6J

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 300pF @ 1V, 1MHz 0 ns 250 µA @ 650 V 650 V 10A 175°C (Max) 1.7 V @ 10 A
WNSC6D10650Q

WNSC6D10650Q

SILICON CARBIDE SCHOTTKY DIODE I

WeEn Semiconductors
3,000 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 500pF @ 1V, 1MHz 0 ns 50 µA @ 650 V 650 V 10A 175°C 1.4 V @ 10 A
BYC60W-600PQ

BYC60W-600PQ

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors
2,705 -

RFQ

BYC60W-600PQ

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 600 V 600 V 60A 175°C (Max) 2.6 V @ 60 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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