Diodos - Rectificadores - Individuales

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BYC58X-600,127

BYC58X-600,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors
3,785 -

RFQ

BYC58X-600,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 12.5 ns 150 µA @ 600 V 600 V 8A 150°C (Max) 3.2 V @ 8 A
BYC8X-600P,127

BYC8X-600P,127

DIODE GEN PURP 600V 8A TO220FP

WeEn Semiconductors
3,214 -

RFQ

BYC8X-600P,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 18 ns 20 µA @ 600 V 600 V 8A 175°C (Max) 1.9 V @ 8 A
BYC20X-600,127

BYC20X-600,127

DIODE GEN PURP 500V 20A TO220FP

WeEn Semiconductors
3,803 -

RFQ

BYC20X-600,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 55 ns 200 µA @ 600 V 500 V 20A 150°C (Max) 2.9 V @ 20 A
BYC15X-600PQ

BYC15X-600PQ

DIODE GEN PURP 600V 15A TO220F

WeEn Semiconductors
2,382 -

RFQ

BYC15X-600PQ

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 18 ns 10 µA @ 600 V 600 V 15A 175°C (Max) 3.2 V @ 15 A
BYV29-600,127

BYV29-600,127

DIODE GEN PURP 600V 9A TO220AC

WeEn Semiconductors
2,655 -

RFQ

BYV29-600,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 50 µA @ 600 V 600 V 9A 150°C (Max) 1.25 V @ 8 A
BYR29-800,127

BYR29-800,127

DIODE GEN PURP 800V 8A TO220AC

WeEn Semiconductors
3,740 -

RFQ

BYR29-800,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 800 V 800 V 8A 150°C (Max) 1.5 V @ 8 A
BYW29E-150,127

BYW29E-150,127

DIODE GEN PURP 150V 8A TO220AC

WeEn Semiconductors
2,999 -

RFQ

BYW29E-150,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 25 ns 10 µA @ 150 V 150 V 8A 150°C (Max) 1.05 V @ 8 A
BYV29-500,127

BYV29-500,127

DIODE GEN PURP 500V 9A TO220AC

WeEn Semiconductors
4,999 -

RFQ

BYV29-500,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 50 µA @ 500 V 500 V 9A 150°C (Max) 1.25 V @ 8 A
BYV29X-600,127

BYV29X-600,127

DIODE GEN PURP 600V 9A TO220FP

WeEn Semiconductors
1,030 -

RFQ

BYV29X-600,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 50 µA @ 600 V 600 V 9A 150°C (Max) 1.26 V @ 8 A
NXPSC046506Q

NXPSC046506Q

DIODE SCHOTTKY 650V 4A TO220AC

WeEn Semiconductors
20,200 -

RFQ

NXPSC046506Q

Ficha técnica

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 130pF @ 1V, 1MHz 0 ns 170 µA @ 650 V 650 V 4A 175°C (Max) 1.7 V @ 4 A
BYV25FD-600,118

BYV25FD-600,118

DIODE GEN PURP 600V 5A DPAK

WeEn Semiconductors
7,500 -

RFQ

BYV25FD-600,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 50 µA @ 600 V 600 V 5A 150°C (Max) 1.9 V @ 5 A
BYV25D-600,118

BYV25D-600,118

DIODE GEN PURP 600V 5A DPAK

WeEn Semiconductors
7,495 -

RFQ

BYV25D-600,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 60 ns 50 µA @ 600 V 600 V 5A 150°C (Max) 1.3 V @ 5 A
BYT79X-600,127

BYT79X-600,127

DIODE GEN PURP 600V 15A TO220F

WeEn Semiconductors
4,451 -

RFQ

BYT79X-600,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 60 ns 50 µA @ 600 V 600 V 15A 150°C (Max) 1.38 V @ 15 A
WNSC2D04650DJ

WNSC2D04650DJ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors
6,500 -

RFQ

WNSC2D04650DJ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 125pF @ 1V, 1MHz 0 ns 20 µA @ 650 V 650 V 4A 175°C 1.7 V @ 4 A
WNSC2D04650TJ

WNSC2D04650TJ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors
3,000 -

RFQ

WNSC2D04650TJ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 125pF @ 1V, 1MHz 0 ns 20 µA @ 650 V 650 V 4A 175°C 1.7 V @ 4 A
BYC8-600,127

BYC8-600,127

DIODE GEN PURP 600V 8A TO220AC

WeEn Semiconductors
4,986 -

RFQ

BYC8-600,127

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 52 ns 150 µA @ 600 V 600 V 8A 150°C (Max) 2.9 V @ 8 A
NXPSC04650B6J

NXPSC04650B6J

DIODE SCHOTTKY 650V 4A D2PAK

WeEn Semiconductors
3,180 -

RFQ

NXPSC04650B6J

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 130pF @ 1V, 1MHz 0 ns 170 µA @ 650 V 650 V 4A 175°C (Max) 1.7 V @ 4 A
MURS160BJ

MURS160BJ

ULTRAFAST POWER DIODE

WeEn Semiconductors
7,616 -

RFQ

MURS160BJ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 75 ns 5 µA @ 600 V 600 V 1A 175°C (Max) 1.25 V @ 1 A
BYC20DX-600PQ

BYC20DX-600PQ

DIODE GEN PURP 600V 20A TO220F

WeEn Semiconductors
4,992 -

RFQ

BYC20DX-600PQ

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 20 ns 10 µA @ 600 V 600 V 20A 175°C (Max) 2.9 V @ 20 A
BYC10B-600,118

BYC10B-600,118

DIODE GEN PURP 500V 10A D2PAK

WeEn Semiconductors
3,407 -

RFQ

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 55 ns 200 µA @ 600 V 500 V 10A 150°C (Max) 2.9 V @ 10 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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