+86 075582561136
Subir BOM
Diodos - Rectificadores - Individuales
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
BYV10EX-600PQDIODE GEN PURP 600V 10A TO220F WeEn Semiconductors |
3,351 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 10 µA @ 600 V | 600 V | 10A | -65°C ~ 175°C | 2 V @ 10 A | |
|
|
BYR29X-800,127DIODE GEN PURP 800V 8A TO220F WeEn Semiconductors |
2,401 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 75 ns | 10 µA @ 800 V | 800 V | 8A | 150°C (Max) | 1.7 V @ 8 A | |
|
NUR460P,133DIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
2,223 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | 175°C (Max) | 1.05 V @ 3 A | |
|
|
NUR460P/L01UDIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
2,388 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | 175°C (Max) | 1.05 V @ 3 A | |
|
|
NUR460P/L02UDIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
3,562 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | 175°C (Max) | 1.05 V @ 3 A | |
|
|
NUR460P/L03UDIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
3,742 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | 175°C (Max) | 1.05 V @ 3 A | |
|
|
NUR460P/L04UDIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors |
3,824 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 75 ns | 10 µA @ 600 V | 600 V | 4A | 175°C (Max) | 1.05 V @ 3 A | |
|
WND08P16DJSTANDARD POWER DIODE WeEn Semiconductors |
2,436 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1600 V | 1600 V | 8A | 150°C | 1.25 V @ 8 A | |
|
NURS360BJDIODE GEN PURP 600V 3A SOD132 WeEn Semiconductors |
3,956 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Surface Mount | - | 75 ns | - | 600 V | 3A | 175°C (Max) | 1 V @ 3 A | |
|
BYC10-600PQDIODE GEN PURP 600V 10A TO220AC WeEn Semiconductors |
2,383 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 19 ns | - | 600 V | 10A | 150°C (Max) | 1.8 V @ 10 A | ||
|
|
BYC10X-600PQDIODE GEN PURP 600V 10A TO220F WeEn Semiconductors |
3,597 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 40 ns | 200 µA @ 600 V | 600 V | 10A | 150°C (Max) | 2.9 V @ 10 A | |
|
|
BYV10MX-600PQULTRAFAST POWER DIODE IN 2-LEADS WeEn Semiconductors |
2,051 | - |
RFQ |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 35 ns | 10 µA @ 600 V | 600 V | 10A | 175°C | 2 V @ 10 A | ||
|
BYV10ED-600PJDIODE GEN PURP 600V 10A DPAK WeEn Semiconductors |
2,389 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 10 µA @ 600 V | 600 V | 10A | 175°C (Max) | 2 V @ 10 A | |
|
NXPSC08650QDIODE SCHOTTKY 650V 8A TO220AC WeEn Semiconductors |
3,263 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 260pF @ 1V, 1MHz | 0 ns | 230 µA @ 650 V | 650 V | 8A | 175°C (Max) | 1.7 V @ 8 A | |
|
|
NXPSC20650QDIODE SCHOTTKY 650V 20A TO220AC WeEn Semiconductors |
2,312 | - |
RFQ |
Ficha técnica |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Discontinued at Digi-Key | Through Hole | 600pF @ 1V, 1MHz | 0 ns | 500 µA @ 650 V | 650 V | 20A | 175°C (Max) | 1.7 V @ 20 A | |
|
|
WNSC2D06650DJSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,938 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 198pF @ 1V, 1MHz | 0 ns | 30 µA @ 650 V | 650 V | 6A | 175°C | 1.7 V @ 6 A | |
|
|
WNSC2D08650DJSILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors |
3,614 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 260pF @ 1V, 1MHz | 0 ns | 40 µA @ 650 V | 650 V | 8A | 175°C | 1.7 V @ 8 A | |
|
|
BYV60W-600PQDIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors |
2,774 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 55 ns | 10 µA @ 600 V | 600 V | 60A | 175°C (Max) | 2 V @ 60 A | |
|
|
NXPSC166506QSILICON CARBIDE POWER DIODE WeEn Semiconductors |
2,832 | - |
RFQ |
Tube | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 534pF @ 1V, 1MHz | 0 ns | 100 µA @ 650 V | 650 V | 16A | 175°C (Max) | 1.7 V @ 16 A | ||
|
MURS360BJULTRAFAST POWER DIODE WeEn Semiconductors |
2,992 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 3 µA @ 600 V | 600 V | 3A | 175°C (Max) | 1.3 V @ 3 A |
- 1500+ Promedio diario de RFQ
- 20,000.000 Unidad estándar de producto
- 1800+ Fabricantes en todo el mundo
- 15,000+ Almacén en inventario
