Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU8M-M3/51

GBU8M-M3/51

BRIDGE RECT 1PHASE 1KV 8A GBU

Vishay General Semiconductor - Diodes Division
2,685 -

RFQ

GBU8M-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA20-M3/45

G5SBA20-M3/45

BRIDGE RECT 1PHASE 200V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,033 -

RFQ

G5SBA20-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 2.8 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA60-M3/45

G5SBA60-M3/45

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division
2,911 -

RFQ

G5SBA60-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 2.8 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA80-M3/45

G5SBA80-M3/45

BRIDGE RECT 1PHASE 800V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,455 -

RFQ

G5SBA80-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 2.8 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006A-E3/45

BU1006A-E3/45

BRIDGE RECT 1P 600V 3A BU

Vishay General Semiconductor - Diodes Division
2,542 -

RFQ

BU1006A-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-E3/45

BU1008A-E3/45

BRIDGE RECT 1P 800V 3A BU

Vishay General Semiconductor - Diodes Division
2,348 -

RFQ

BU1008A-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010A-E3/45

BU1010A-E3/45

BRIDGE RECT 1P 1KV 3A BU

Vishay General Semiconductor - Diodes Division
2,111 -

RFQ

BU1010A-E3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1206-E3/51

BU1206-E3/51

BRIDGE RECT 1P 600V 3.4A BU

Vishay General Semiconductor - Diodes Division
3,514 -

RFQ

BU1206-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.4 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1208-E3/51

BU1208-E3/51

BRIDGE RECT 1P 800V 3.4A BU

Vishay General Semiconductor - Diodes Division
3,235 -

RFQ

BU1208-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3.4 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1006A-M3/51

BU1006A-M3/51

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
2,463 -

RFQ

BU1006A-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-M3/51

BU1008A-M3/51

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division
3,416 -

RFQ

BU1008A-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010A-M3/51

BU1010A-M3/51

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
3,688 -

RFQ

BU1010A-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010-E3/45

BU1010-E3/45

BRIDGE RECT 1P 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division
2,182 -

RFQ

BU1010-E3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
VS-2KBB05R

VS-2KBB05R

RECTIFIER BRIDGE 50V 1.9A D-37

Vishay General Semiconductor - Diodes Division
2,954 -

RFQ

Tube * Active - - - - - - - - -
GSIB640-E3/45

GSIB640-E3/45

BRIDGE RECT 1P 400V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,039 -

RFQ

GSIB640-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 2.8 A 950 mV @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU1006-M3/51

BU1006-M3/51

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
3,084 -

RFQ

BU1006-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008-M3/51

BU1008-M3/51

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division
2,305 -

RFQ

BU1008-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010-M3/51

BU1010-M3/51

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
2,270 -

RFQ

BU1010-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU6A-M3/45

GBU6A-M3/45

BRIDGE RECT 1PHASE 50V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,436 -

RFQ

GBU6A-M3/45

Ficha técnica

Tube - Active Single Phase Standard 50 V 3.8 A 1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8A-M3/45

GBU8A-M3/45

BRIDGE RECT 1PHASE 50V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,372 -

RFQ

GBU8A-M3/45

Ficha técnica

Tube - Active Single Phase Standard 50 V 3.9 A 1 V @ 8 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
Total 1397 Record«Prev1... 2425262728293031...70Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario