Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GSIB15A40-E3/45

GSIB15A40-E3/45

BRIDGE RECT 1P 400V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,322 -

RFQ

GSIB15A40-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3.5 A 1 V @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU1506-M3/51

BU1506-M3/51

BRIDGE RECT 1P 600V 15A BU

Vishay General Semiconductor - Diodes Division
3,018 -

RFQ

BU1506-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 15 A 1.05 V @ 7.5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1508-M3/51

BU1508-M3/51

BRIDGE RECT 1P 800V 15A BU

Vishay General Semiconductor - Diodes Division
2,900 -

RFQ

BU1508-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 15 A 1.05 V @ 7.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1510-M3/51

BU1510-M3/51

BRIDGE RECT 1P 1KV 15A BU

Vishay General Semiconductor - Diodes Division
3,448 -

RFQ

BU1510-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 15 A 1.05 V @ 7.5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1006-M3/45

BU1006-M3/45

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
2,343 -

RFQ

BU1006-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008-M3/45

BU1008-M3/45

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division
2,105 -

RFQ

BU1008-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010-M3/45

BU1010-M3/45

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
3,495 -

RFQ

BU1010-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB620N-M3/45

GSIB620N-M3/45

BRIDGE RECT 1P 200V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,161 -

RFQ

GSIB620N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 6 A 950 mV @ 3 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB640N-M3/45

GSIB640N-M3/45

BRIDGE RECT 1P 400V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,318 -

RFQ

GSIB640N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 6 A 950 mV @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB660N-M3/45

GSIB660N-M3/45

BRIDGE RECT 1P 600V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,107 -

RFQ

GSIB660N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 6 A 950 mV @ 3 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB680N-M3/45

GSIB680N-M3/45

BRIDGE RECT 1P 800V 6A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,583 -

RFQ

GSIB680N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 6 A 950 mV @ 3 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU2006-E3/51

BU2006-E3/51

BRIDGE RECT 1P 600V 3.5A BU

Vishay General Semiconductor - Diodes Division
3,859 -

RFQ

BU2006-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.5 A 1.05 V @ 10 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1206-M3/45

BU1206-M3/45

BRIDGE RECT 1P 600V 12A BU

Vishay General Semiconductor - Diodes Division
3,938 -

RFQ

BU1206-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 12 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1208-M3/45

BU1208-M3/45

BRIDGE RECT 1P 800V 12A BU

Vishay General Semiconductor - Diodes Division
3,982 -

RFQ

BU1208-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 12 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1210-M3/45

BU1210-M3/45

BRIDGE RECT 1P 1KV 12A BU

Vishay General Semiconductor - Diodes Division
2,097 -

RFQ

BU1210-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 12 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GSIB15A20N-M3/45

GSIB15A20N-M3/45

BRIDGE RECT 1P 200V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,536 -

RFQ

GSIB15A20N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 15 A 1 V @ 7.5 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A40N-M3/45

GSIB15A40N-M3/45

BRIDGE RECT 1P 400V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,389 -

RFQ

GSIB15A40N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 15 A 1 V @ 7.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A60N-M3/45

GSIB15A60N-M3/45

BRIDGE RECT 1P 600V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,338 -

RFQ

GSIB15A60N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 15 A 1 V @ 7.5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB15A80N-M3/45

GSIB15A80N-M3/45

BRIDGE RECT 1P 800V 15A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,523 -

RFQ

GSIB15A80N-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 15 A 1 V @ 7.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
GSIB2020-E3/45

GSIB2020-E3/45

BRIDGE RECT 1P 200V 3.5A GSIB-5S

Vishay General Semiconductor - Diodes Division
2,105 -

RFQ

GSIB2020-E3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 3.5 A 1 V @ 10 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
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