Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBLA02-E3/51

GBLA02-E3/51

BRIDGE RECT 1PHASE 200V 3A GBL

Vishay General Semiconductor - Diodes Division
3,967 -

RFQ

GBLA02-E3/51

Ficha técnica

Bulk - Active Single Phase Avalanche 200 V 3 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA04-E3/51

GBLA04-E3/51

BRIDGE RECT 1PHASE 400V 3A GBL

Vishay General Semiconductor - Diodes Division
3,255 -

RFQ

GBLA04-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA06-E3/51

GBLA06-E3/51

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division
2,374 -

RFQ

GBLA06-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA08-E3/51

GBLA08-E3/51

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
2,105 -

RFQ

GBLA08-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA10-E3/51

GBLA10-E3/51

BRIDGE RECT 1PHASE 1KV 3A GBL

Vishay General Semiconductor - Diodes Division
3,404 -

RFQ

GBLA10-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA005-E3/45

GBLA005-E3/45

BRIDGE RECT 1PHASE 50V 3A GBL

Vishay General Semiconductor - Diodes Division
2,706 -

RFQ

GBLA005-E3/45

Ficha técnica

Tube - Active Single Phase Standard 50 V 3 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA01-E3/45

GBLA01-E3/45

BRIDGE RECT 1PHASE 100V 3A GBL

Vishay General Semiconductor - Diodes Division
3,317 -

RFQ

GBLA01-E3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 3 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA02-E3/45

GBLA02-E3/45

BRIDGE RECT 1PHASE 200V 3A GBL

Vishay General Semiconductor - Diodes Division
2,468 -

RFQ

GBLA02-E3/45

Ficha técnica

Tube - Active Single Phase Avalanche 200 V 3 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA04-E3/45

GBLA04-E3/45

BRIDGE RECT 1PHASE 400V 3A GBL

Vishay General Semiconductor - Diodes Division
2,388 -

RFQ

GBLA04-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA06-E3/45

GBLA06-E3/45

BRIDGE RECT 1PHASE 600V 3A GBL

Vishay General Semiconductor - Diodes Division
2,537 -

RFQ

GBLA06-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA08-E3/45

GBLA08-E3/45

BRIDGE RECT 1PHASE 800V 3A GBL

Vishay General Semiconductor - Diodes Division
3,522 -

RFQ

GBLA08-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA10-E3/45

GBLA10-E3/45

BRIDGE RECT 1PHASE 1KV 3A GBL

Vishay General Semiconductor - Diodes Division
3,999 -

RFQ

GBLA10-E3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL005-E3/51

GBL005-E3/51

BRIDGE RECT 1PHASE 50V 3A GBL

Vishay General Semiconductor - Diodes Division
2,152 -

RFQ

GBL005-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 50 V 3 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL005-E3/45

GBL005-E3/45

BRIDGE RECT 1PHASE 50V 3A GBL

Vishay General Semiconductor - Diodes Division
3,623 -

RFQ

GBL005-E3/45

Ficha técnica

Tube - Active Single Phase Standard 50 V 3 A 1.1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL04-E3/45

GBL04-E3/45

BRIDGE RECT 1PHASE 400V 3A GBL

Vishay General Semiconductor - Diodes Division
3,660 -

RFQ

GBL04-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA06-M3/51

GBLA06-M3/51

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
3,146 -

RFQ

GBLA06-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA08-M3/51

GBLA08-M3/51

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
3,160 -

RFQ

GBLA08-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 4 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA10-M3/51

GBLA10-M3/51

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division
2,364 -

RFQ

GBLA10-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 4 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA06-M3/45

GBLA06-M3/45

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
2,340 -

RFQ

GBLA06-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA08-M3/45

GBLA08-M3/45

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
2,606 -

RFQ

GBLA08-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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