Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
G3SBA20-M3/45

G3SBA20-M3/45

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,799 -

RFQ

G3SBA20-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA20-M3/51

G3SBA20-M3/51

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,215 -

RFQ

G3SBA20-M3/51

Ficha técnica

Tray - Active Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA80-M3/45

G3SBA80-M3/45

BRIDGE RECT 1PHASE 800V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,680 -

RFQ

G3SBA80-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA80-M3/51

G3SBA80-M3/51

BRIDGE RECT 1PHASE 800V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,752 -

RFQ

G3SBA80-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-1KAB05E

VS-1KAB05E

RECTIFIER BRIDGE 50V 1.5A D-38

Vishay General Semiconductor - Diodes Division
3,796 -

RFQ

Tube * Active - - - - - - - - -
GBL04-M3/45

GBL04-M3/45

4A 400V GPP INLINE BRIDGE

Vishay General Semiconductor - Diodes Division
3,967 -

RFQ

GBL04-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL01-M3/51

GBL01-M3/51

BRIDGE RECT 1PHASE 100V 4A GBL

Vishay General Semiconductor - Diodes Division
3,270 -

RFQ

GBL01-M3/51

Ficha técnica

Tray - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL02-M3/51

GBL02-M3/51

BRIDGE RECT 1PHASE 200V 4A GBL

Vishay General Semiconductor - Diodes Division
2,452 -

RFQ

GBL02-M3/51

Ficha técnica

Tray - Active Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL04-M3/51

GBL04-M3/51

BRIDGE RECT 1PHASE 400V 4A GBL

Vishay General Semiconductor - Diodes Division
2,449 -

RFQ

GBL04-M3/51

Ficha técnica

Tray - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL06-M3/51

GBL06-M3/51

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
2,891 -

RFQ

GBL06-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08-M3/51

GBL08-M3/51

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
3,105 -

RFQ

GBL08-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL10-M3/51

GBL10-M3/51

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division
2,851 -

RFQ

GBL10-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL01-M3/45

GBL01-M3/45

BRIDGE RECT 1PHASE 100V 4A GBL

Vishay General Semiconductor - Diodes Division
2,943 -

RFQ

GBL01-M3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL02-M3/45

GBL02-M3/45

BRIDGE RECT 1PHASE 200V 4A GBL

Vishay General Semiconductor - Diodes Division
2,162 -

RFQ

GBL02-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL06-M3/45

GBL06-M3/45

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
3,980 -

RFQ

GBL06-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08-M3/45

GBL08-M3/45

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
3,414 -

RFQ

GBL08-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL10-M3/45

GBL10-M3/45

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division
3,132 -

RFQ

GBL10-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
G3SBA60-M3/45

G3SBA60-M3/45

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division
3,593 -

RFQ

G3SBA60-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA60-M3/51

G3SBA60-M3/51

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,721 -

RFQ

G3SBA60-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
VS-2KBB05

VS-2KBB05

RECTIFIER BRIDGE 50V 1.9A D-37

Vishay General Semiconductor - Diodes Division
3,762 -

RFQ

Tube * Active - - - - - - - - -
Total 1397 Record«Prev1... 2122232425262728...70Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario