Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
VS-2KBB80

VS-2KBB80

RECTIFIER BRIDGE 800V 1.9A D-37

Vishay General Semiconductor - Diodes Division
2,043 -

RFQ

Tube * Active - - - - - - - - -
G5SBA20-M3/51

G5SBA20-M3/51

BRIDGE RECT 1PHASE 200V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,147 -

RFQ

G5SBA20-M3/51

Ficha técnica

Tray - Active Single Phase Standard 200 V 2.8 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA60-M3/51

G5SBA60-M3/51

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,469 -

RFQ

G5SBA60-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 2.8 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA80-M3/51

G5SBA80-M3/51

BRIDGE RECT 1PHASE 800V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,905 -

RFQ

G5SBA80-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 2.8 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006A-E3/51

BU1006A-E3/51

BRIDGE RECT 1P 600V 3A BU

Vishay General Semiconductor - Diodes Division
3,116 -

RFQ

BU1006A-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-E3/51

BU1008A-E3/51

BRIDGE RECT 1P 800V 3A BU

Vishay General Semiconductor - Diodes Division
3,867 -

RFQ

BU1008A-E3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU4B-E3/45

GBU4B-E3/45

BRIDGE RECT 1PHASE 100V 3A GBU

Vishay General Semiconductor - Diodes Division
2,336 -

RFQ

GBU4B-E3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 3 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4M-E3/45

GBU4M-E3/45

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division
3,717 -

RFQ

GBU4M-E3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1010-E3/51

BU1010-E3/51

BRIDGE RECT 1P 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division
2,001 -

RFQ

BU1010-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU4A-M3/51

GBU4A-M3/51

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division
2,349 -

RFQ

GBU4A-M3/51

Ficha técnica

Tray - Active Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4B-M3/51

GBU4B-M3/51

BRIDGE RECT 1PHASE 100V 4A GBU

Vishay General Semiconductor - Diodes Division
2,461 -

RFQ

GBU4B-M3/51

Ficha técnica

Tray - Active Single Phase Standard 100 V 4 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D-M3/51

GBU4D-M3/51

BRIDGE RECT 1PHASE 200V 4A GBU

Vishay General Semiconductor - Diodes Division
3,256 -

RFQ

GBU4D-M3/51

Ficha técnica

Tray - Active Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4G-M3/51

GBU4G-M3/51

BRIDGE RECT 1PHASE 400V 4A GBU

Vishay General Semiconductor - Diodes Division
2,899 -

RFQ

GBU4G-M3/51

Ficha técnica

Tray - Active Single Phase Standard 400 V 4 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4J-M3/51

GBU4J-M3/51

BRIDGE RECT 1PHASE 600V 4A GBU

Vishay General Semiconductor - Diodes Division
2,725 -

RFQ

GBU4J-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4K-M3/51

GBU4K-M3/51

BRIDGE RECT 1PHASE 800V 4A GBU

Vishay General Semiconductor - Diodes Division
2,930 -

RFQ

GBU4K-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 4 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4M-M3/51

GBU4M-M3/51

BRIDGE RECT 1PHASE 1KV 4A GBU

Vishay General Semiconductor - Diodes Division
2,475 -

RFQ

GBU4M-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 4 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4A-M3/45

GBU4A-M3/45

BRIDGE RECT 1PHASE 50V 3A GBU

Vishay General Semiconductor - Diodes Division
3,585 -

RFQ

GBU4A-M3/45

Ficha técnica

Tube - Active Single Phase Standard 50 V 3 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4B-M3/45

GBU4B-M3/45

BRIDGE RECT 1PHASE 100V 4A GBU

Vishay General Semiconductor - Diodes Division
2,501 -

RFQ

GBU4B-M3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 4 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4D-M3/45

GBU4D-M3/45

BRIDGE RECT 1PHASE 200V 4A GBU

Vishay General Semiconductor - Diodes Division
3,751 -

RFQ

GBU4D-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 4 A 1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4G-M3/45

GBU4G-M3/45

BRIDGE RECT 1PHASE 400V 4A GBU

Vishay General Semiconductor - Diodes Division
3,249 -

RFQ

GBU4G-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 4 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
Total 1397 Record«Prev1... 2223242526272829...70Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario