Diodos - Rectificadores de puente

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
GBU4J-M3/45

GBU4J-M3/45

BRIDGE RECT 1PHASE 600V 4A GBU

Vishay General Semiconductor - Diodes Division
2,992 -

RFQ

GBU4J-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4K-M3/45

GBU4K-M3/45

BRIDGE RECT 1PHASE 800V 4A GBU

Vishay General Semiconductor - Diodes Division
3,213 -

RFQ

GBU4K-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4M-M3/45

GBU4M-M3/45

BRIDGE RECT 1PHASE 1KV 4A GBU

Vishay General Semiconductor - Diodes Division
3,090 -

RFQ

GBU4M-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 4 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6A-M3/51

GBU6A-M3/51

BRIDGE RECT 1PHASE 50V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,327 -

RFQ

GBU6A-M3/51

Ficha técnica

Tray - Active Single Phase Standard 50 V 3.8 A 1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8A-M3/51

GBU8A-M3/51

BRIDGE RECT 1PHASE 50V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,423 -

RFQ

GBU8A-M3/51

Ficha técnica

Tray - Active Single Phase Standard 50 V 3.9 A 1 V @ 8 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6B-M3/51

GBU6B-M3/51

BRIDGE RECT 1PHASE 100V 6A GBU

Vishay General Semiconductor - Diodes Division
2,131 -

RFQ

GBU6B-M3/51

Ficha técnica

Tray - Active Single Phase Standard 100 V 6 A 1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6D-M3/51

GBU6D-M3/51

BRIDGE RECT 1PHASE 200V 6A GBU

Vishay General Semiconductor - Diodes Division
2,388 -

RFQ

GBU6D-M3/51

Ficha técnica

Tray - Active Single Phase Standard 200 V 6 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6G-M3/51

GBU6G-M3/51

BRIDGE RECT 1PHASE 400V 6A GBU

Vishay General Semiconductor - Diodes Division
3,547 -

RFQ

GBU6G-M3/51

Ficha técnica

Tray - Active Single Phase Standard 400 V 6 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J-M3/51

GBU6J-M3/51

BRIDGE RECT 1PHASE 600V 6A GBU

Vishay General Semiconductor - Diodes Division
2,569 -

RFQ

GBU6J-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6K-M3/51

GBU6K-M3/51

BRIDGE RECT 1PHASE 800V 6A GBU

Vishay General Semiconductor - Diodes Division
2,205 -

RFQ

GBU6K-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 6 A 1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6M-M3/51

GBU6M-M3/51

BRIDGE RECT 1PHASE 1KV 6A GBU

Vishay General Semiconductor - Diodes Division
3,318 -

RFQ

GBU6M-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8B-M3/51

GBU8B-M3/51

BRIDGE RECT 1PHASE 100V 8A GBU

Vishay General Semiconductor - Diodes Division
3,974 -

RFQ

GBU8B-M3/51

Ficha técnica

Tray - Active Single Phase Standard 100 V 8 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8D-M3/51

GBU8D-M3/51

BRIDGE RECT 1PHASE 200V 8A GBU

Vishay General Semiconductor - Diodes Division
3,919 -

RFQ

GBU8D-M3/51

Ficha técnica

Tray - Active Single Phase Standard 200 V 8 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8G-M3/51

GBU8G-M3/51

BRIDGE RECT 1PHASE 400V 8A GBU

Vishay General Semiconductor - Diodes Division
3,670 -

RFQ

GBU8G-M3/51

Ficha técnica

Tray - Active Single Phase Standard 400 V 8 A 1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8J-M3/51

GBU8J-M3/51

BRIDGE RECT 1PHASE 600V 8A GBU

Vishay General Semiconductor - Diodes Division
2,593 -

RFQ

GBU8J-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 8 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006-E3/51

BU1006-E3/51

BRIDGE RECT 1P 600V 3.2A BU

Vishay General Semiconductor - Diodes Division
3,957 -

RFQ

BU1006-E3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 3.2 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008-E3/51

BU1008-E3/51

BRIDGE RECT 1P 800V 3.2A BU

Vishay General Semiconductor - Diodes Division
2,005 -

RFQ

BU1008-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3.2 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1210-E3/51

BU1210-E3/51

BRIDGE RECT 1P 1KV 3.4A BU

Vishay General Semiconductor - Diodes Division
2,152 -

RFQ

BU1210-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.4 A 1.05 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU6G-E3/51

GBU6G-E3/51

BRIDGE RECT 1PHASE 400V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,999 -

RFQ

GBU6G-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 3.8 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-M3/51

GBU8K-M3/51

BRIDGE RECT 1PHASE 800V 8A GBU

Vishay General Semiconductor - Diodes Division
3,336 -

RFQ

GBU8K-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 8 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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1500+ Promedio diario de RFQ
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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