Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
AFGHL40T120RLD

AFGHL40T120RLD

1200V/40A FSII IGBT LOW VCESAT T

onsemi
2,872 -

RFQ

AFGHL40T120RLD

Ficha técnica

Tray - Active Trench Field Stop 1200 V 48 A 160 A 2.1V @ 15V, 40A 529 W 3.4mJ (on), 1.2mJ (off) Standard 395 nC 48ns/208ns 600V, 40A, 5Ohm, 15V 195 ns -55°C ~ 175°C (TJ) Through Hole
IXXH75N60B3

IXXH75N60B3

DISC IGBT XPT-GENX3 TO-247AD

IXYS
3,407 -

RFQ

Tube XPT™, GenX3™ Active PT 600 V 160 A 300 A 1.85V @ 15V, 60A 750 W 1.7mJ (on), 1.5mJ (off) Standard 107 nC 35ns/118ns 400V, 60A, 5Ohm, 15V 75 ns -55°C ~ 175°C (TJ) Through Hole
IXYH40N120B3

IXYH40N120B3

IGBT 1200V 96A 577W TO247

IXYS
2,417 -

RFQ

IXYH40N120B3

Ficha técnica

Tube GenX3™, XPT™ Active - 1200 V 96 A 200 A 2.9V @ 15V, 40A 577 W 2.7mJ (on), 1.6mJ (off) Standard 87 nC 22ns/177ns 600V, 40A, 10Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT68GA60B2D40

APT68GA60B2D40

IGBT 600V 121A 520W TO-247

Microchip Technology
3,866 -

RFQ

APT68GA60B2D40

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 121 A 202 A 2.5V @ 15V, 40A 520 W 715µJ (on), 607µJ (off) Standard 198 nC 21ns/133ns 400V, 40A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT68GA60LD40

APT68GA60LD40

IGBT 600V 121A 520W TO-264

Microchip Technology
2,077 -

RFQ

APT68GA60LD40

Ficha técnica

Tube POWER MOS 8™ Active PT 600 V 121 A 202 A 2.5V @ 15V, 40A 520 W 715µJ (on), 607µJ (off) Standard 198 nC 21ns/133ns 400V, 40A, 4.7Ohm, 15V 22 ns -55°C ~ 150°C (TJ) Through Hole
IXGT6N170AHV-TRL

IXGT6N170AHV-TRL

IXGT6N170AHV TRL

IXYS
2,786 -

RFQ

Tape & Reel (TR) - Active - 1700 V 6 A 14 A 7V @ 15V, 3A 75 W 590µJ (on), 180µJ (off) Standard 18.5 nC 46ns/220ns 850V, 6A, 33Ohm, 15V 40 ns -55°C ~ 150°C (TJ) Surface Mount
IXGT6N170A-TRL

IXGT6N170A-TRL

IXGT6N170A TRL

IXYS
3,702 -

RFQ

Tape & Reel (TR) - Active - 1700 V 6 A 14 A 7V @ 15V, 3A 75 W 590µJ (on), 180µJ (off) Standard 18.5 nC 46ns/220ns 850V, 6A, 33Ohm, 15V 40 ns -55°C ~ 150°C (TJ) Surface Mount
IXGT16N170

IXGT16N170

IGBT 1700V 32A 190W TO268

IXYS
2,151 -

RFQ

IXGT16N170

Ficha técnica

Tube - Active NPT 1700 V 32 A 80 A 3.5V @ 15V, 16A 190 W 9.3mJ (off) Standard 78 nC 45ns/400ns 1360V, 16A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IXYR50N120C3D1

IXYR50N120C3D1

IGBT 1200V 56A 290W ISOPLUS247

IXYS
3,649 -

RFQ

IXYR50N120C3D1

Ficha técnica

Tube GenX3™, XPT™ Active - 1200 V 56 A 210 A 4V @ 15V, 50A 290 W 3mJ (on), 1mJ (off) Standard 142 nC 28ns/133ns 600V, 50A, 5Ohm, 15V 195 ns -55°C ~ 150°C (TJ) Through Hole
APT64GA90LD30

APT64GA90LD30

IGBT 900V 117A 500W TO-264

Microchip Technology
3,791 -

RFQ

APT64GA90LD30

Ficha técnica

Tube POWER MOS 8™ Active PT 900 V 117 A 193 A 3.1V @ 15V, 38A 500 W 1192µJ (on), 1088µJ (off) Standard 162 nC 18ns/131ns 600V, 38A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXA30RG1200DHG-TUB

IXA30RG1200DHG-TUB

IGBT PHASELEG 1200V 30A SMPD

IXYS
2,010 -

RFQ

IXA30RG1200DHG-TUB

Ficha técnica

Tray - Active - 1200 V 43 A - 2.1V @ 15V, 25A 147 W 2.5mJ (on), 3mJ (off) Standard 76 nC 70ns/250ns 600V, 25A, 39Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
ITF38IF1200HJ

ITF38IF1200HJ

DISC IGBT XPT-GENX4 TO-247AD

IXYS
2,674 -

RFQ

Tube - Active - - - - - - - - - - - - - -
IXYJ20N120C3D1

IXYJ20N120C3D1

IGBT 1200V 21A 105W TO247

IXYS
3,343 -

RFQ

IXYJ20N120C3D1

Ficha técnica

Tube GenX3™, XPT™ Active - 1200 V 21 A 84 A 3.4V @ 15V, 20A 105 W 1.3mJ (on), 500µJ (off) Standard 53 nC 20ns/90ns 600V, 20A, 10Ohm, 15V 195 ns -55°C ~ 150°C (TJ) Through Hole
APT70GR120L

APT70GR120L

IGBT 1200V 160A 961W TO264

Microchip Technology
2,692 -

RFQ

APT70GR120L

Ficha técnica

Tube - Active NPT 1200 V 160 A 280 A 3.2V @ 15V, 70A 961 W 3.82mJ (on), 2.58mJ (off) Standard 544 nC 33ns/278ns 600V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXXH110N65B4

IXXH110N65B4

DISC IGBT XPT-GENX4 TO-247AD

IXYS
3,430 -

RFQ

Tube XPT™, GenX4™ Active PT 650 V 250 A 570 A 2.1V @ 15V, 110A 880 W 2.2mJ (on), 1.05mJ (off) Standard 183 nC 26ns/146ns 400V, 55A, 2Ohm, 15V 40 ns -55°C ~ 175°C (TJ) Through Hole
APT70GR120B2

APT70GR120B2

IGBT 1200V 160A 961W TO247

Microchip Technology
3,073 -

RFQ

APT70GR120B2

Ficha técnica

Tube - Active NPT 1200 V 160 A 280 A 3.2V @ 15V, 70A 961 W 3.82mJ (on), 2.58mJ (off) Standard 544 nC 33ns/278ns 600V, 70A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYK100N65B3D1

IXYK100N65B3D1

IGBT

IXYS
3,075 -

RFQ

IXYK100N65B3D1

Ficha técnica

Tube XPT™, GenX3™ Active - 650 V 225 A 460 A 1.85V @ 15V, 70A 830 W 1.27mJ (on), 2mJ (off) Standard 168 nC 29ns/150ns 400V, 50A, 3Ohm, 15V 37 ns -55°C ~ 175°C (TJ) Through Hole
IXGT6N170AHV

IXGT6N170AHV

IGBT 1700V 6A 75W TO268

IXYS
2,155 -

RFQ

IXGT6N170AHV

Ficha técnica

Tube - Active - 1700 V 6 A 14 A 7V @ 15V, 3A 75 W 590µJ (on), 180µJ (off) Standard 18.5 nC 46ns/220ns 850V, 6A, 33Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IXYP30N120B4

IXYP30N120B4

IGBT DISCRETE TO-220

IXYS
3,553 -

RFQ

Tube - Active - - - - - - - - - - - - - -
APT50GP60BG

APT50GP60BG

IGBT 600V 100A 625W TO247

Microchip Technology
3,297 -

RFQ

APT50GP60BG

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A 190 A 2.7V @ 15V, 50A 625 W 465µJ (on), 637µJ (off) Standard 165 nC 19ns/83ns 400V, 50A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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