Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
APT50GF120B2RG

APT50GF120B2RG

IGBT 1200V 135A 781W TMAX

Microchip Technology
2,883 -

RFQ

APT50GF120B2RG

Ficha técnica

Tube - Active NPT 1200 V 135 A 150 A 3V @ 15V, 50A 781 W 3.6mJ (on), 2.64mJ (off) Standard 340 nC 25ns/260ns 800V, 50A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGT32N170A

IXGT32N170A

IGBT 1700V 32A 350W TO268

IXYS
2,304 -

RFQ

IXGT32N170A

Ficha técnica

Tube - Active NPT 1700 V 32 A 110 A 5V @ 15V, 21A 350 W 1.5mJ (off) Standard 155 nC 46ns/260ns 850V, 32A, 2.7Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IXXX100N60C3H1

IXXX100N60C3H1

IGBT 600V 170A 695W PLUS247

IXYS
2,870 -

RFQ

Tube GenX3™, XPT™ Active PT 600 V 170 A 340 A 2.2V @ 15V, 70A 695 W 2mJ (on), 950µJ (off) Standard 150 nC 30ns/90ns 360V, 70A, 2Ohm, 15V 140 ns - Through Hole
IXBT42N170-TRL

IXBT42N170-TRL

IXBT42N170 TRL

IXYS
3,438 -

RFQ

Tape & Reel (TR) BIMOSFET™ Active - 1700 V 80 A 300 A 2.8V @ 15V, 42A 360 W - Standard 188 nC 37ns/340ns 850V, 42A, 10Ohm, 15V - - Surface Mount
IXYR100N65A3V1

IXYR100N65A3V1

IGBT

IXYS
2,579 -

RFQ

Tube - Active - - - - - - - - - - - - - -
IXXK200N60B3

IXXK200N60B3

IGBT 600V 380A 1630W TO264

IXYS
2,583 -

RFQ

IXXK200N60B3

Ficha técnica

Tube GenX3™, XPT™ Active PT 600 V 380 A 900 A 1.7V @ 15V, 100A 1630 W 2.85mJ (on), 2.9mJ (off) Standard 315 nC 48ns/160ns 360V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXXK200N60C3

IXXK200N60C3

IGBT 600V 340A 1630W TO264

IXYS
3,177 -

RFQ

IXXK200N60C3

Ficha técnica

Tube GenX3™, XPT™ Active PT 600 V 340 A 900 A 2.1V @ 15V, 100A 1630 W 3mJ (on), 1.7mJ (off) Standard 315 nC 47ns/125ns 360V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXG70IF1200NA

IXG70IF1200NA

IGBT MODULE - OTHERS SMPD-B

IXYS
2,136 -

RFQ

Tube X2PT™, XPT™ Active PT 1200 V 130 A - - - - Standard - - - - - Chassis Mount
IXBF40N160

IXBF40N160

IGBT 1600V 28A 250W I4PAC

IXYS
3,148 -

RFQ

IXBF40N160

Ficha técnica

Tube BIMOSFET™ Active - 1600 V 28 A - 7.1V @ 15V, 20A 250 W - Standard 130 nC - 960V, 25A, 22Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYH8N250CHV

IXYH8N250CHV

IGBT

IXYS
3,333 -

RFQ

IXYH8N250CHV

Ficha técnica

Tube XPT™ Active - 2500 V 29 A 70 A 4V @ 15V, 8A 280 W 2.6mJ (on), 1.07mJ (off) Standard 45 nC 11ns/180ns 1250V, 8A, 15Ohm, 15V 5 ns -55°C ~ 175°C (TJ) Through Hole
IXXT100N75B4HV

IXXT100N75B4HV

IGBT DISCRETE TO-268HV

IXYS
3,219 -

RFQ

Tube - Active - - - - - - - - - - - - - -
IXGX82N120A3

IXGX82N120A3

IGBT 1200V 260A 1250W PLUS247

IXYS
2,098 -

RFQ

Tube GenX3™ Active PT 1200 V 260 A 580 A 2.05V @ 15V, 82A 1250 W 5.5mJ (on), 12.5mJ (off) Standard 340 nC 34ns/265ns 600V, 80A, 2Ohm, 15V - - Through Hole
IXGK82N120A3

IXGK82N120A3

IGBT 1200V 260A 1250W TO264

IXYS
2,831 -

RFQ

IXGK82N120A3

Ficha técnica

Tube GenX3™ Active PT 1200 V 260 A 580 A 2.05V @ 15V, 82A 1250 W 5.5mJ (on), 12.5mJ (off) Standard 340 nC 34ns/265ns 600V, 80A, 2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGK82N120B3

IXGK82N120B3

IGBT 1200V 230A 1250W TO264

IXYS
3,861 -

RFQ

IXGK82N120B3

Ficha técnica

Tube GenX3™ Active PT 1200 V 230 A 500 A 3.2V @ 15V, 82A 1250 W 5mJ (on), 3.3mJ (off) Standard 350 nC 30ns/210ns 600V, 80A, 2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT80GP60B2G

APT80GP60B2G

IGBT 600V 100A 1041W TMAX

Microchip Technology
2,813 -

RFQ

APT80GP60B2G

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A - 2.7V @ 15V, 80A 1041 W - Standard - - - - - Through Hole
IXYK100N120C3

IXYK100N120C3

IGBT 1200V 188A 1150W TO264

IXYS
3,870 -

RFQ

IXYK100N120C3

Ficha técnica

Tube GenX3™, XPT™ Active - 1200 V 188 A 490 A 3.5V @ 15V, 100A 1150 W 6.5mJ (on), 2.9mJ (off) Standard 270 nC 32ns/123ns 600V, 100A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
APT200GN60B2G

APT200GN60B2G

IGBT 600V 283A 682W TO247

Microchip Technology
2,481 -

RFQ

APT200GN60B2G

Ficha técnica

Tube - Active Trench Field Stop 600 V 283 A 600 A 1.85V @ 15V, 200A 682 W 13mJ (on), 11mJ (off) Standard 1180 nC 50ns/560ns 400V, 200A, 1Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXBT42N170A

IXBT42N170A

IGBT 1700V 42A 357W TO268

IXYS
3,968 -

RFQ

IXBT42N170A

Ficha técnica

Tube BIMOSFET™ Active - 1700 V 42 A 265 A 6V @ 15V, 21A 357 W 3.43mJ (on), 430µJ (off) Standard 188 nC 19ns/200ns 850V, 21A, 1Ohm, 15V 330 ns -55°C ~ 150°C (TJ) Surface Mount
IXYK30N170CV1

IXYK30N170CV1

DISC IGBT XPT-HI VOLTAGE TO-264(

IXYS
2,397 -

RFQ

Tube XPT™ Active PT 1700 V 100 A 250 A 4V @ 15V, 30A 937 W 3.6mJ (on), 1.8mJ (off) Standard 150 nC 16ns/143ns 850V, 30A, 2.7Ohm, 15V 33 ns -55°C ~ 175°C (TJ) Through Hole
MMIX1X100N60B3H1

MMIX1X100N60B3H1

IGBT 600V 145A 400W SMPD

IXYS
2,081 -

RFQ

MMIX1X100N60B3H1

Ficha técnica

Tube GenX3™, XPT™ Active - 600 V 145 A 440 A 1.8V @ 15V, 70A 400 W 1.9mJ (on), 2mJ (off) Standard 143 nC 30ns/120ns 360V, 70A, 2Ohm, 15V 140 ns -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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