Transistores - IGBT - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
IXGT72N60A3-TRL

IXGT72N60A3-TRL

IXGT72N60A3 TRL

IXYS
3,835 -

RFQ

Tape & Reel (TR) GenX3™ Active PT 600 V 75 A 400 A 1.35V @ 15V, 60A 540 W 1.38mJ (on), 3.5mJ (off) Standard 230 nC 31ns/320ns 480V, 50A, 3Ohm, 15V 34 ns -55°C ~ 150°C (TJ) Surface Mount
APT25GN120SG/TR

APT25GN120SG/TR

IGBT FIELDSTOP LOW FREQUENCY SIN

Microchip Technology
3,305 -

RFQ

APT25GN120SG/TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active Trench Field Stop 1200 V 67 A 75 A 2.1V @ 15V, 25A 272 W -, 2.15J (off) Standard 155 nC 22ns/280ns 800V, 25A, 1Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IXXH50N60B3

IXXH50N60B3

IGBT 600V 120A 600W TO247

IXYS
3,022 -

RFQ

Tube GenX3™, XPT™ Active PT 600 V 120 A 200 A 1.8V @ 15V, 36A 600 W 670µJ (on), 740µJ (off) Standard 70 nC 27ns/100ns 360V, 36A, 5Ohm, 15V - - Through Hole
APT30GP60BG

APT30GP60BG

IGBT 600V 100A 463W TO247

Microchip Technology
3,194 -

RFQ

APT30GP60BG

Ficha técnica

Tube POWER MOS 7® Active PT 600 V 100 A 100 A 2.7V @ 15V, 30A 463 W 260µJ (on), 250µJ (off) Standard 90 nC 13ns/55ns 400V, 30A, 5Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
APT40GR120S

APT40GR120S

IGBT 1200V 88A 500W D3PAK

Microchip Technology
2,906 -

RFQ

APT40GR120S

Ficha técnica

Tube - Active NPT 1200 V 88 A 160 A 3.2V @ 15V, 40A 500 W 1.38mJ (on), 906µJ (off) Standard 210 nC 22ns/163ns 600V, 40A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
GT40WR21,Q

GT40WR21,Q

DISCRETE IGBT TRANSISTOR TO-3PN(

Toshiba Semiconductor and Storage
2,946 -

RFQ

GT40WR21,Q

Ficha técnica

Tray - Active - 1350 V 40 A 80 A 5.9V @ 15V, 40A 375 W - Standard - - - - 175°C (TJ) Through Hole
IXXH40N65B4H1

IXXH40N65B4H1

IGBT 650V 120A 455W TO247AD

IXYS
2,011 -

RFQ

IXXH40N65B4H1

Ficha técnica

Tube GenX4™, XPT™ Active PT 650 V 120 A 240 A 2V @ 15V, 40A 455 W 1.4mJ (on), 560µJ (off) Standard 77 nC 28ns/144ns 400V, 40A, 5Ohm, 15V 120 ns -55°C ~ 175°C (TJ) Through Hole
APT64GA90B

APT64GA90B

IGBT 900V 117A 500W TO247

Microchip Technology
3,219 -

RFQ

APT64GA90B

Ficha técnica

Tube - Active PT 900 V 117 A 193 A 3.1V @ 15V, 38A 500 W 1857µJ (on), 2311µJ (off) Standard 162 nC 18ns/131ns 600V, 38A, 4.7Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGR24N120C3D1

IXGR24N120C3D1

IGBT 1200V 48A 200W ISOPLUS247

IXYS
2,061 -

RFQ

IXGR24N120C3D1

Ficha técnica

Tube GenX3™ Active PT 1200 V 48 A 96 A 4.2V @ 15V, 20A 200 W 1.37mJ (on), 470µJ (off) Standard 79 nC 16ns/93ns 600V, 20A, 5Ohm, 15V 220 ns -55°C ~ 150°C (TJ) Through Hole
IXYH40N120A4

IXYH40N120A4

IGBT 1200V 40A GENX4 XPT TO-247

IXYS
2,647 -

RFQ

IXYH40N120A4

Ficha técnica

Tube XPT™, GenX4™ Active PT 1200 V 140 A 275 A 1.8V @ 15V, 32A 600 W 2.3mJ (on), 3.75mJ (off) Standard 90 nC 22ns/204ns 600V, 32A, 5Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXGH30N120C3H1

IXGH30N120C3H1

IGBT 1200V 48A 250W TO247AD

IXYS
3,052 -

RFQ

IXGH30N120C3H1

Ficha técnica

Tube GenX3™ Active PT 1200 V 48 A 115 A 4.2V @ 15V, 24A 250 W 1.45mJ (on), 470µJ (off) Standard 80 nC 18ns/106ns 600V, 24A, 5Ohm, 15V 70 ns -55°C ~ 150°C (TJ) Through Hole
IXYT30N65C3H1HV

IXYT30N65C3H1HV

IGBT 650V 60A 270W TO268HV

IXYS
3,319 -

RFQ

IXYT30N65C3H1HV

Ficha técnica

Tube GenX3™, XPT™ Active PT 650 V 60 A 118 A 2.7V @ 15V, 30A 270 W 1mJ (on), 270µJ (off) Standard 44 nC 21ns/75ns 400V, 30A, 10Ohm, 15V 120 ns -55°C ~ 175°C (TJ) Surface Mount
IXGT10N170A

IXGT10N170A

IGBT 1700V 10A 140W TO268

IXYS
3,439 -

RFQ

IXGT10N170A

Ficha técnica

Tube - Active NPT 1700 V 10 A 20 A 6V @ 15V, 5A 140 W 380µJ (off) Standard 29 nC 46ns/190ns 850V, 10A, 22Ohm, 15V - -55°C ~ 150°C (TJ) Surface Mount
IXYH30N120C4

IXYH30N120C4

DISC IGBT XPT-GENX4 TO-247AD

IXYS
3,236 -

RFQ

Tube XPT™, GenX4™ Active PT 1200 V 94 A 166 A 2.4V @ 15V, 25A 500 W 4.8mJ (on), 1.5mJ (off) Standard 57 nC 18ns/205ns 960V, 25A, 5Ohm, 15V 58 ns -55°C ~ 175°C (TJ) Through Hole
IXYH30N120A4

IXYH30N120A4

DISC IGBT XPT-GENX4 TO-247AD

IXYS
3,865 -

RFQ

Tube XPT™, GenX4™ Active PT 1200 V 106 A 184 A 1.9V @ 15V, 25A 500 W 4mJ (on), 3.4mJ (off) Standard 57 nC 15ns/235ns 960V, 25A, 5Ohm, 15V 42 ns -55°C ~ 175°C (TJ) Through Hole
IXYH30N120B4

IXYH30N120B4

DISC IGBT XPT-GENX4 TO-247AD

IXYS
3,618 -

RFQ

Tube XPT™, GenX4™ Active PT 1200 V 100 A 174 A 2.1V @ 15V, 25A 500 W 4.4mJ (on), 2.6mJ (off) Standard 58 nC 20ns/245ns 960V, 25A, 5Ohm, 15V 60 ns -55°C ~ 175°C (TJ) Through Hole
AUIRGP4062D

AUIRGP4062D

IGBT 600V 48A TO247AC

Infineon Technologies
2,589 -

RFQ

AUIRGP4062D

Ficha técnica

Tube - Obsolete - 600 V 48 A 72 A 1.95V @ 15V, 24A 250 W 115µJ (on), 600µJ (off) Standard 50 nC 41ns/104ns 400V, 24A, 10Ohm, 15V 89 ns -55°C ~ 175°C (TJ) Through Hole
IXGH24N120C3H1

IXGH24N120C3H1

IGBT 1200V 48A 250W TO247AD

IXYS
2,492 -

RFQ

IXGH24N120C3H1

Ficha técnica

Tube GenX3™ Active PT 1200 V 48 A 96 A 4.2V @ 15V, 20A 250 W 1.16mJ (on), 470µJ (off) Standard 79 nC 16ns/93ns 600V, 20A, 5Ohm, 15V 70 ns -55°C ~ 150°C (TJ) Through Hole
IGW75N60H3FKSA1

IGW75N60H3FKSA1

IGBT TRENCH/FS 600V 140A TO247-3

Infineon Technologies
2,947 -

RFQ

IGW75N60H3FKSA1

Ficha técnica

Tube TrenchStop® Active Trench Field Stop 600 V 140 A 225 A 2.3V @ 15V, 75A 428 W 3mJ (on), 1.7mJ (off) Standard 470 nC 31ns/265ns 400V, 75A, 5.2Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IXYP15N65B3D1

IXYP15N65B3D1

DISC IGBT XPT-GENX3 TO-220AB/FP

IXYS
3,607 -

RFQ

Tube - Active - - - - - - - - - - - - - -
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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