Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDP5680

FDP5680

MOSFET N-CH 60V 40A TO220-3

Fairchild Semiconductor
7,661 -

RFQ

FDP5680

Ficha técnica

Tube PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 6V, 10V 20mOhm @ 20A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1850 pF @ 25 V - 65W (Tc) -65°C ~ 175°C (TJ) Through Hole
2SK3404-Z-E2-AZ

2SK3404-Z-E2-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
1,000 -

RFQ

2SK3404-Z-E2-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IXTY18P10T

IXTY18P10T

MOSFET P-CH 100V 18A TO252

IXYS
3,922 -

RFQ

IXTY18P10T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 120mOhm @ 9A, 10V 4.5V @ 250µA 39 nC @ 10 V ±15V 2100 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPW11N60C3

SPW11N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies
7,369 -

RFQ

SPW11N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP15N65C3XKSA1

SPP15N65C3XKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
6,300 -

RFQ

SPP15N65C3XKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS244Z

BTS244Z

N-CHANNEL POWER MOSFET

Infineon Technologies
3,447 -

RFQ

BTS244Z

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
AUIRFSL8408

AUIRFSL8408

AUTOMOTIVE HEXFET N CHANNEL

International Rectifier
1,435 -

RFQ

AUIRFSL8408

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) - 1.6mOhm @ 100A, 10V 3.9V @ 250µA 324 nC @ 10 V - 10820 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1403A-E

2SK1403A-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
696 -

RFQ

2SK1403A-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IXTH30N50P

IXTH30N50P

MOSFET N-CH 500V 30A TO247

IXYS
3,448 -

RFQ

IXTH30N50P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 5V @ 250µA 70 nC @ 10 V ±30V 4150 pF @ 25 V - 460W (Tc) -55°C ~ 150°C (TJ) Through Hole
2SK2484(1)-AZ

2SK2484(1)-AZ

N-CHANNEL SWITCHING POWER MOSFET

Renesas Electronics America Inc
276 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPA65R380E6XKSA1

IPA65R380E6XKSA1

MOSFET N-CH 650V 10.6A TO220-FP

Infineon Technologies
950 -

RFQ

IPA65R380E6XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S4N100SM9A

RF1S4N100SM9A

MOSFET N-CH 1000V 4.3A TO263AB

Harris Corporation
187 -

RFQ

RF1S4N100SM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 1000 V 4.3A (Tc) - 3.5Ohm @ 2.5A, 10V 4V @ 250µA - ±20V - - 150W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTA12N50P

IXTA12N50P

MOSFET N-CH 500V 12A TO263

IXYS
3,444 -

RFQ

IXTA12N50P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 500mOhm @ 6A, 10V 5.5V @ 250µA 29 nC @ 10 V ±30V 1830 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTP220N04T2

IXTP220N04T2

MOSFET N-CH 40V 220A TO220AB

IXYS
2,511 -

RFQ

IXTP220N04T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 220A (Tc) 10V 3.5mOhm @ 50A, 10V 4V @ 250µA 112 nC @ 10 V ±20V 6820 pF @ 25 V - 360W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPI15N65C3

SPI15N65C3

N-CHANNEL POWER MOSFET

Infineon Technologies
400 -

RFQ

SPI15N65C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1600 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQAF10N80

FQAF10N80

MOSFET N-CH 800V 6.7A TO3PF

Fairchild Semiconductor
7,549 -

RFQ

FQAF10N80

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 800 V 6.7A (Tc) 10V 1.05Ohm @ 3.35A, 10V 5V @ 250µA 71 nC @ 10 V ±30V 2700 pF @ 25 V - 113W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6515KNXC7G

R6515KNXC7G

650V 15A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
1,000 -

RFQ

R6515KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 315mOhm @ 6.5A, 10V 5V @ 430µA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
R6015ENXC7G

R6015ENXC7G

600V 15A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
1,000 -

RFQ

R6015ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Ta) 10V 290mOhm @ 6.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 910 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
R6515ENXC7G

R6515ENXC7G

650V 15A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
1,000 -

RFQ

R6515ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Ta) 10V 315mOhm @ 6.5A, 10V 4V @ 430µA 40 nC @ 10 V ±20V 910 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
R6015KNXC7G

R6015KNXC7G

600V 15A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
999 -

RFQ

R6015KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 15A (Tc) 10V 290mOhm @ 6.5A, 10V 5V @ 1mA 27.5 nC @ 10 V ±20V 1050 pF @ 25 V - 60W (Tc) 150°C (TJ) Through Hole
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1500+
1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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