Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFL1N15

RFL1N15

N-CHANNEL POWER MOSFET

Harris Corporation
4,903 -

RFQ

RFL1N15

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 1A (Tc) 10V 1.9Ohm @ 1A, 10V 4V @ 250µA - ±20V 200 pF @ 25 V - 8.33W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDB2670

FDB2670

MOSFET N-CH 200V 19A TO263AB

Fairchild Semiconductor
3,853 -

RFQ

FDB2670

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 19A (Ta) 10V 130mOhm @ 10A, 10V 4.5V @ 250µA 38 nC @ 10 V ±20V 1320 pF @ 100 V - 93W (Tc) -65°C ~ 175°C (TJ) Surface Mount
FDS4072N7

FDS4072N7

MOSFET N-CH 40V 12.4A 8SO

Fairchild Semiconductor
8,575 -

RFQ

FDS4072N7

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 12.4A (Ta) 4.5V, 10V 9mOhm @ 13.7A, 10V 3V @ 250µA 46 nC @ 4.5 V ±12V 4299 pF @ 20 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
UPA2717GR-E1-AT

UPA2717GR-E1-AT

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
7,306 -

RFQ

UPA2717GR-E1-AT

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2717AGR-E1-AT

UPA2717AGR-E1-AT

MOSFET P-CH 30V 15A 8PSOP

Renesas Electronics America Inc
2,500 -

RFQ

UPA2717AGR-E1-AT

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 30 V 15A (Ta) - 5.5mOhm @ 7.5A, 10V 2.5V @ 1mA 130 nC @ 10 V - 3550 pF @ 10 V - - - Surface Mount
2SK1093-E

2SK1093-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
931 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPU95R450P7AKMA1

IPU95R450P7AKMA1

MOSFET N-CH 950V 14A TO251-3

Infineon Technologies
974 -

RFQ

IPU95R450P7AKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 14A (Tc) 10V 450mOhm @ 7.2A, 10V 3.5V @ 360µA 35 nC @ 10 V ±20V 1053 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF76443S3S

HUF76443S3S

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
400 -

RFQ

HUF76443S3S

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 4.5V, 10V 8mOhm @ 75A, 10V 3V @ 250µA 129 nC @ 10 V ±16V 4115 pF @ 25 V - 260W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFP6N45

RFP6N45

N-CHANNEL POWER MOSFET

Harris Corporation
210 -

RFQ

RFP6N45

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 450 V 6A (Tc) 10V 1.25Ohm @ 3A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6011ENXC7G

R6011ENXC7G

600V 11A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
1,000 -

RFQ

R6011ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 390mOhm @ 3.8A, 10V 4V @ 1mA 32 nC @ 10 V ±20V 670 pF @ 25 V - 53W (Tc) 150°C (TJ) Through Hole
ISL9N303AS3ST

ISL9N303AS3ST

MOSFET N-CH 30V 75A D2PAK

Fairchild Semiconductor
8,377 -

RFQ

ISL9N303AS3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 3.2mOhm @ 75A, 10V 3V @ 250µA 172 nC @ 10 V ±20V 7000 pF @ 15 V - 215W (Tc) -55°C ~ 175°C (TJ) Surface Mount
R6011KNXC7G

R6011KNXC7G

600V 11A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
1,000 -

RFQ

R6011KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Ta) 10V 390mOhm @ 3.8A, 10V 5V @ 1mA 22 nC @ 10 V ±20V 740 pF @ 25 V - 53W (Tc) 150°C (TJ) Through Hole
FDH5500

FDH5500

MOSFET N-CH 55V 75A TO247-3

Fairchild Semiconductor
3,835 -

RFQ

FDH5500

Ficha técnica

Tube UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7mOhm @ 75A, 10V 4V @ 250µA 268 nC @ 20 V ±30V 3565 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFM6P10

RFM6P10

P-CHANNEL POWER MOSFET

Harris Corporation
3,064 -

RFQ

RFM6P10

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 6A (Tc) 10V 600mOhm @ 6A, 10V 4V @ 250µA - ±20V 800 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFD322

IRFD322

N-CHANNEL POWER MOSFET

Harris Corporation
1,111 -

RFQ

IRFD322

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 400mA (Tc) 10V 2.5Ohm @ 250mA, 10V 4V @ 250µA 15 nC @ 10 V ±20V 455 pF @ 25 V - 1W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF151

IRF151

N-CHANNEL POWER MOSFET

Harris Corporation
512 -

RFQ

IRF151

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Tc) 10V 55mOhm @ 20A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF242

IRF242

MOSFET N-CH 200V 16A TO3

International Rectifier
277 -

RFQ

IRF242

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 16A - - - - - - - 125W - Through Hole
2SK3480-S12-AZ

2SK3480-S12-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
5,387 -

RFQ

2SK3480-S12-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
UPA2732T1A-E1-AY

UPA2732T1A-E1-AY

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
3,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NDB6030L

NDB6030L

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
580 -

RFQ

NDB6030L

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 52A (Tc) 4.5V, 10V 13.5mOhm @ 26A, 10V 3V @ 250µA 60 nC @ 10 V ±16V 1350 pF @ 15 V - 75W (Tc) -65°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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