Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR3910TRPBF

IRFR3910TRPBF

IRFR3910 - 12V-300V N-CHANNEL PO

International Rectifier
3,128 -

RFQ

IRFR3910TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF221

IRF221

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
3,154 -

RFQ

IRF221

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRL3803VPBF

IRL3803VPBF

IRL3803 - 12V-300V N-CHANNEL POW

International Rectifier
3,323 -

RFQ

IRL3803VPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 5.5mOhm @ 71A, 10V 1V @ 250µA 76 nC @ 4.5 V ±16V 3720 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2804S

AUIRF2804S

MOSFET N-CH 40V 195A D2PAK

International Rectifier
3,524 -

RFQ

AUIRF2804S

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 2mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6450 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU9024NPBF

IRFU9024NPBF

IRFU9024N - 55V SINGLE P-CHANNEL

International Rectifier
2,081 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3704ZSPBF

IRF3704ZSPBF

MOSFET N-CH 20V 67A D2PAK

International Rectifier
3,140 -

RFQ

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 67A (Tc) 4.5V, 10V 7.9mOhm @ 21A, 10V 2.55V @ 250µA 13 nC @ 4.5 V ±20V 1220 pF @ 10 V - 57W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLI540NPBF

IRLI540NPBF

MOSFET N-CH 100V 23A TO220AB

International Rectifier
3,765 -

RFQ

IRLI540NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 4V, 10V 44mOhm @ 12A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 54W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3636PBF

IRLR3636PBF

IRLR3636 - 12V-300V N-CHANNEL PO

International Rectifier
2,722 -

RFQ

IRLR3636PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 6.8mOhm @ 50A, 10V 2.5V @ 100µA 49 nC @ 4.5 V ±16V 3779 pF @ 50 V - 143W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7769L2TRPBF

IRF7769L2TRPBF

IRF7769 - 12V-300V N-CHANNEL POW

International Rectifier
3,981 -

RFQ

IRF7769L2TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 375A (Tc) 10V 3.5mOhm @ 74A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 11560 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF7759L2TRPBF

IRF7759L2TRPBF

IRF7759 - 12V-300V N-CHANNEL POW

International Rectifier
2,397 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 26A (Ta), 375A (Tc) 10V 2.3mOhm @ 96A, 10V 4V @ 250µA 300 nC @ 10 V ±20V 12222 pF @ 25 V - 3.3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR220NPBF

IRFR220NPBF

IRFR220 - 12V-300V N-CHANNEL POW

International Rectifier
2,938 -

RFQ

IRFR220NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 10V 600mOhm @ 2.9A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 300 pF @ 25 V - 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS3607PBF

IRFS3607PBF

IRFS3607 - 12V-300V N-CHANNEL PO

International Rectifier
3,656 -

RFQ

IRFS3607PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU7546PBF

IRFU7546PBF

IRFU7546 - 12V-300V N-CHANNEL PO

International Rectifier
2,348 -

RFQ

IRFU7546PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 56A (Tc) 6V, 10V 7.9mOhm @ 43A, 10V 3.7V @ 100µA 87 nC @ 10 V ±20V 3020 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLML2402GTRPBF

IRLML2402GTRPBF

MOSFET N-CH 20V 1.2A SOT23

International Rectifier
3,353 -

RFQ

IRLML2402GTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 2.7V, 4.5V 250mOhm @ 930mA, 4.5V 700mV @ 250µA (Min) 3.9 nC @ 4.5 V ±12V 110 pF @ 15 V - 540mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR024NPBF

IRLR024NPBF

MOSFET N-CH 55V 17A DPAK

International Rectifier
3,718 -

RFQ

IRLR024NPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 4V, 10V 65mOhm @ 10A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3306TRL

AUIRFS3306TRL

AUIRFS3306 - 55V-60V N-CHANNEL A

International Rectifier
2,534 -

RFQ

AUIRFS3306TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 125 nC @ 10 V ±20V 4520 pF @ 50 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR48Z

AUIRFR48Z

MOSFET N-CH 55V 42A DPAK

International Rectifier
3,287 -

RFQ

AUIRFR48Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 50µA 60 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105ZTRL

AUIRFR4105ZTRL

AUTOMOTIVE HEXFET N-CHANNEL POWE

International Rectifier
2,541 -

RFQ

AUIRFR4105ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFR4105Z

AUIRFR4105Z

MOSFET N-CH 55V 20A DPAK

International Rectifier
2,842 -

RFQ

AUIRFR4105Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL8409

AUIRFSL8409

MOSFET N-CH 40V 195A TO262

International Rectifier
2,587 -

RFQ

AUIRFSL8409

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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