Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFR4620TRL

AUIRFR4620TRL

MOSFET N-CH 200V 24A DPAK

International Rectifier
2,293 -

RFQ

AUIRFR4620TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 78mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4115TRL

AUIRFS4115TRL

MOSFET N-CH 150V 99A D2PAK

International Rectifier
2,276 -

RFQ

AUIRFS4115TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 99A (Tc) 10V 12.1mOhm @ 62A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5270 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLH6224TRPBF

IRLH6224TRPBF

MOSFET N-CH 20V 28A/105A 8PQFN

International Rectifier
2,363 -

RFQ

IRLH6224TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 28A (Ta), 105A (Tc) 2.5V, 4.5V 3mOhm @ 20A, 4.5V 1.1V @ 50µA 86 nC @ 10 V ±12V 3710 pF @ 10 V - 3.6W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR7833PBF

IRLR7833PBF

MOSFET N-CH 30V 140A DPAK

International Rectifier
3,891 -

RFQ

IRLR7833PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 4.5mOhm @ 15A, 10V 2.3V @ 250µA 50 nC @ 4.5 V ±20V 4010 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS3107-7P

AUIRFS3107-7P

AUIRFS3107 - 55V-60V N-CHANNEL A

International Rectifier
3,967 -

RFQ

AUIRFS3107-7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 240A (Tc) 10V 2.6mOhm @ 160A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 9200 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7669L2TR

AUIRF7669L2TR

AUIRF7669L2 - 75V-100V N-CHANNEL

International Rectifier
3,724 -

RFQ

AUIRF7669L2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 19A (Ta), 114A (Tc) 10V 4.4mOhm @ 68A, 10V 5V @ 250µA 120 nC @ 10 V ±20V 5660 pF @ 25 V - 3.3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLR2905Z

AUIRLR2905Z

MOSFET N-CH 55V 42A DPAK

International Rectifier
3,375 -

RFQ

AUIRLR2905Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRLS3036

AUIRLS3036

MOSFET N-CH 60V 195A D2PAK

International Rectifier
2,393 -

RFQ

AUIRLS3036

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 195A (Tc) 4.5V, 10V 2.4mOhm @ 165A, 10V 2.5V @ 250µA 140 nC @ 4.5 V ±16V 11210 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7734TRL7PP

IRFS7734TRL7PP

IRFS7734 - 12V-300V N-CHANNEL PO

International Rectifier
2,848 -

RFQ

IRFS7734TRL7PP

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 197A (Tc) 6V, 10V 3.05mOhm @ 100A, 10V 3.7V @ 150µA 270 nC @ 10 V ±20V 10130 pF @ 25 V - 294W (Tc) -55°C ~ 175°C (TJ) Surface Mount
2N6763

2N6763

POWER FIELD-EFFECT TRANSISTOR, N

International Rectifier
2,903 -

RFQ

2N6763

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRL2203NSPBF

IRL2203NSPBF

MOSFET N-CH 30V 116A D2PAK

International Rectifier
3,792 -

RFQ

IRL2203NSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 3V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 3.8W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2804STRL7P

AUIRF2804STRL7P

MOSFET N-CH 40V 240A D2PAK

International Rectifier
3,632 -

RFQ

AUIRF2804STRL7P

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.6mOhm @ 160A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6930 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3715ZPBF

IRL3715ZPBF

MOSFET N-CH 20V 50A TO220AB

International Rectifier
3,011 -

RFQ

IRL3715ZPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3805STRL

AUIRF3805STRL

MOSFET N-CH 55V 160A D2PAK

International Rectifier
2,513 -

RFQ

AUIRF3805STRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) - 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V - 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB4620PBF

IRFB4620PBF

IRFB4620 - 12V-300V N-CHANNEL PO

International Rectifier
2,975 -

RFQ

IRFB4620PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 25A (Tc) 10V 72.5mOhm @ 15A, 10V 5V @ 100µA 38 nC @ 10 V ±20V 1710 pF @ 50 V - 144W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3805S-7TRL

AUIRF3805S-7TRL

MOSFET N-CH 55V 160A D2PAK

International Rectifier
3,335 -

RFQ

AUIRF3805S-7TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB7746PBF

IRFB7746PBF

MOSFET N-CH 75V 59A TO220AB

International Rectifier
3,752 -

RFQ

IRFB7746PBF

Ficha técnica

Bulk StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 59A (Tc) 6V, 10V 10.6mOhm @ 35A, 10V 3.7V @ 100µA 83 nC @ 10 V ±20V 3049 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFH5007TRPBF

IRFH5007TRPBF

IRFH5007 - 12V-300V N-CHANNEL PO

International Rectifier
2,509 -

RFQ

IRFH5007TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 17A (Ta), 100A (Tc) 10V 5.9mOhm @ 50A, 10V 4V @ 150µA 98 nC @ 10 V ±20V 4290 pF @ 25 V - 3.6W (Ta), 156W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF6648TRPBF

IRF6648TRPBF

IRF6648 - 12V-300V N-CHANNEL POW

International Rectifier
3,910 -

RFQ

IRF6648TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 86A (Tc) 10V 7mOhm @ 17A, 10V 4.9V @ 150µA 50 nC @ 10 V ±20V 2120 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRFP4110PBF

IRFP4110PBF

IRFP4110 - 12V-300V N-CHANNEL PO

International Rectifier
3,702 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 4.5mOhm @ 75A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9620 pF @ 50 V - 370W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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