Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF6616TRPBF

IRF6616TRPBF

IRF6616 - MOSFET, 40V, 106A, 5.0

International Rectifier
36,648 -

RFQ

IRF6616TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 19A (Ta), 106A (Tc) 4.5V, 10V 5mOhm @ 19A, 10V 2.25V @ 250µA 44 nC @ 4.5 V ±20V 3765 pF @ 20 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6618TRPBF

IRF6618TRPBF

IRF6618 - DIRECTFET POWER MOSFET

International Rectifier
24,572 -

RFQ

IRF6618TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 30A (Ta), 170A (Tc) 4.5V, 10V 2.2mOhm @ 30A, 10V 2.35V @ 250µA 65 nC @ 4.5 V ±20V 5640 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6797MTRPBF

IRF6797MTRPBF

MOSFET N-CH 25V 36A/210A DIRECT

International Rectifier
11,833 -

RFQ

IRF6797MTRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 36A (Ta), 210A (Tc) 4.5V, 10V 1.4mOhm @ 38A, 10V 2.35V @ 150µA 68 nC @ 4.5 V ±20V 5790 pF @ 13 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
AUIRF3710ZSTRR

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

International Rectifier
160,624 -

RFQ

AUIRF3710ZSTRR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) - 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V - 2900 pF @ 25 V - - - Surface Mount
AUIRF3205Z

AUIRF3205Z

AUIRF3205Z - 55V-60V N-CHANNEL A

International Rectifier
3,544 -

RFQ

AUIRF3205Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS8405TRL

AUIRFS8405TRL

MOSFET N-CH 40V 120A D2PAK

International Rectifier
136,035 -

RFQ

AUIRFS8405TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 100A, 10V 3.9V @ 100µA 161 nC @ 10 V ±20V 5193 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFZ48N

AUIRFZ48N

MOSFET N-CH 55V 69A TO220AB

International Rectifier
18,190 -

RFQ

AUIRFZ48N

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 69A (Tc) 10V 14mOhm @ 40A, 10V 4V @ 100µA 63 nC @ 10 V ±20V 1900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF430

IRF430

500V, N-CHANNEL REPETITIVE AVALA

International Rectifier
7,564 -

RFQ

IRF430

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFR8405TRL

AUIRFR8405TRL

MOSFET N-CH 40V 100A DPAK

International Rectifier
2,793 -

RFQ

AUIRFR8405TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 1.98mOhm @ 90A, 10V 3.9V @ 100µA 155 nC @ 10 V ±20V 5171 pF @ 25 V - 163W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFSL6535

AUIRFSL6535

MOSFET N-CH 300V 19A TO262-3-901

International Rectifier
15,300 -

RFQ

AUIRFSL6535

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 19A (Tc) 10V 185mOhm @ 11A, 10V 5V @ 150µA 57 nC @ 10 V ±20V 2340 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRL1404ZS

AUIRL1404ZS

MOSFET N-CH 40V 160A D2PAK

International Rectifier
11,878 -

RFQ

AUIRL1404ZS

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL1404Z

AUIRL1404Z

MOSFET N-CH 40V 160A TO220

International Rectifier
22,760 -

RFQ

AUIRL1404Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRL7766M2TR

AUIRL7766M2TR

MOSFET N-CH 100V 10A DIRECTFET

International Rectifier
37,230 -

RFQ

AUIRL7766M2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Ta) 4.5V, 10V 10mOhm @ 31A, 10V 2.5V @ 150µA 66 nC @ 4.5 V ±16V 5305 pF @ 25 V - 2.5W (Ta), 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL3705ZSTRL

AUIRL3705ZSTRL

MOSFET N-CH 55V 75A D2PAK

International Rectifier
12,554 -

RFQ

AUIRL3705ZSTRL

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) - 8mOhm @ 52A, 10V 3V @ 250µA 60 nC @ 5 V - 2880 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2805STRL

AUIRF2805STRL

MOSFET N-CH 55V 135A D2PAK

International Rectifier
24,000 -

RFQ

AUIRF2805STRL

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 135A (Tc) - 4.7mOhm @ 104A, 10V 4V @ 250µA 230 nC @ 10 V - 5110 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3205

AUIRF3205

AUIRF3205 - 55V-60V N-CHANNEL AU

International Rectifier
9,950 -

RFQ

AUIRF3205

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFSL7430PBF

IRFSL7430PBF

MOSFET N-CH 40V 195A D2PAK

International Rectifier
4,360 -

RFQ

IRFSL7430PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFBA1405

AUIRFBA1405

MOSFET N-CH 55V 95A SUPER-220

International Rectifier
2,024 -

RFQ

AUIRFBA1405

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
AUIRF1404ZSTRL

AUIRF1404ZSTRL

MOSFET N-CH 40V 160A D2PAK

International Rectifier
1,149 -

RFQ

AUIRF1404ZSTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 10V 3.7mOhm @ 75A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 4340 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF6641TRPBF

IRF6641TRPBF

IRF6641 - 12V-300V N-CHANNEL POW

International Rectifier
14,962 -

RFQ

IRF6641TRPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 4.6A (Ta), 26A (Tc) 10V 59.9mOhm @ 5.5A, 10V 4.9V @ 150µA 48 nC @ 10 V ±20V 2290 pF @ 25 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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