Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF640NSTRLPBF

IRF640NSTRLPBF

HEXFET POWER MOSFET

International Rectifier
3,904 -

RFQ

IRF640NSTRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 150mOhm @ 11A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1160 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP4468PBF

IRFP4468PBF

IRFP4468 - 12V-300V N-CHANNEL PO

International Rectifier
2,333 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 195A (Tc) 10V 2.6mOhm @ 180A, 10V 4V @ 250µA 540 nC @ 10 V ±20V 19860 pF @ 50 V - 520W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR9343TRPBF

IRLR9343TRPBF

IRLR9343 - 20V-250V P-CHANNEL PO

International Rectifier
3,952 -

RFQ

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) 4.5V, 10V 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V ±20V 660 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRFB7437PBF

IRFB7437PBF

IRFB7437 - 12V-300V N-CHANNEL PO

International Rectifier
2,762 -

RFQ

IRFB7437PBF

Ficha técnica

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 6V, 10V 2mOhm @ 100A, 10V 3.9V @ 150µA 225 nC @ 10 V ±20V 7330 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR6215TRLPBF

IRFR6215TRLPBF

IRFR6215 - 20V-250V P-CHANNEL PO

International Rectifier
3,955 -

RFQ

IRFR6215TRLPBF

Ficha técnica

Bulk HEXFET® Active P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP4229PBF

IRFP4229PBF

IRFP4229 - 12V-300V N-CHANNEL PO

International Rectifier
3,487 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 46mOhm @ 26A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4560 pF @ 25 V - 310W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRF3205ZSTRLPBF

IRF3205ZSTRLPBF

IRF3205 - 12V-300V N-CHANNEL POW

International Rectifier
3,570 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 6.5mOhm @ 66A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 3450 pF @ 25 V - 170W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710ZPBF

IRF3710ZPBF

IRF3710 - 12V-300V N-CHANNEL POW

International Rectifier
3,390 -

RFQ

IRF3710ZPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 59A (Tc) 10V 18mOhm @ 35A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2900 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7413TRPBF-1

IRF7413TRPBF-1

MOSFET N-CH 30V 13A 8SO

International Rectifier
3,274 -

RFQ

IRF7413TRPBF-1

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11mOhm @ 7.3A, 10V 3V @ 250µA 79 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR8256PBF

IRLR8256PBF

MOSFET N-CH 25V 81A DPAK

International Rectifier
3,095 -

RFQ

IRLR8256PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 25 V 81A (Tc) 4.5V, 10V 5.7mOhm @ 25A, 10V 2.35V @ 25µA 15 nC @ 4.5 V ±20V 1470 pF @ 13 V - 63W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3704ZPBF

IRFR3704ZPBF

MOSFET N-CH 20V 60A DPAK

International Rectifier
3,001 -

RFQ

IRFR3704ZPBF

Ficha técnica

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 8.4mOhm @ 15A, 10V 2.55V @ 250µA 14 nC @ 4.5 V ±20V 1190 pF @ 10 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR2905ZTRLPBF

IRLR2905ZTRLPBF

MOSFET N-CH 55V 42A DPAK

International Rectifier
3,423 -

RFQ

IRLR2905ZTRLPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP1405PBF

IRFP1405PBF

IRFP1405 - 12V-300V N-CHANNEL PO

International Rectifier
3,882 -

RFQ

IRFP1405PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5.3mOhm @ 95A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFSA8409-7P

AUIRFSA8409-7P

AUIRFSA8409-7P - 20V-800V AUTOMO

International Rectifier
2,686 -

RFQ

AUIRFSA8409-7P

Ficha técnica

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 523A (Tc) 10V 0.69mOhm @ 100A, 10V 3.9V @ 250µA 460 nC @ 10 V ±20V 13975 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205PBF

IRF3205PBF

IRF3205 - 12V-300V N-CHANNEL POW

International Rectifier
2,766 -

RFQ

IRF3205PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF7749L2TR

AUIRF7749L2TR

AUIRF7749L2 - 55V-60V N-CHANNEL

International Rectifier
3,471 -

RFQ

AUIRF7749L2TR

Ficha técnica

Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 36A (Ta), 345A (Tc) 10V 1.5mOhm @ 120A, 10V 4V @ 250µA 275 nC @ 10 V 60V 10655 pF @ 25 V - 3.8W (Ta), 341W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF322

IRF322

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
2,449 -

RFQ

IRF322

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
AUIRFR9024N

AUIRFR9024N

MOSFET P-CH 55V 11A DPAK

International Rectifier
3,934 -

RFQ

AUIRFR9024N

Ficha técnica

Bulk HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 11A (Tc) 10V 175mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL1404ZSPBF

IRL1404ZSPBF

MOSFET N-CH 40V 75A D2PAK

International Rectifier
2,666 -

RFQ

IRL1404ZSPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB33N15DPBF

IRFB33N15DPBF

MOSFET N-CH 150V 33A TO220AB

International Rectifier
3,230 -

RFQ

IRFB33N15DPBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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