Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
AUIRFS3607

AUIRFS3607

MOSFET N-CH 75V 80A D2PAK

International Rectifier
688 -

RFQ

AUIRFS3607

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRL1404ZSTRL

AUIRL1404ZSTRL

MOSFET N-CH 40V 160A D2PAK

International Rectifier
1,270 -

RFQ

AUIRL1404ZSTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1324S

AUIRF1324S

MOSFET N-CH 24V 195A D2PAK

International Rectifier
10,232 -

RFQ

AUIRF1324S

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS4115TRL7PP

IRFS4115TRL7PP

IRFS4115 - 12V-300V N-CHANNEL PO

International Rectifier
24,994 -

RFQ

IRFS4115TRL7PP

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 105A (Tc) 10V 11.8mOhm @ 63A, 10V 5V @ 250µA 110 nC @ 10 V ±20V 5320 pF @ 50 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF2903Z

AUIRF2903Z

MOSFET N-CH 30V 160A TO220AB

International Rectifier
2,150 -

RFQ

AUIRF2903Z

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 290W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF3805L

AUIRF3805L

MOSFET N-CH 55V 160A TO262

International Rectifier
2,929 -

RFQ

AUIRF3805L

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V ±20V 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS3607TRL

AUIRFS3607TRL

MOSFET N-CH 75V 80A D2PAK

International Rectifier
16,374 -

RFQ

AUIRFS3607TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 9mOhm @ 46A, 10V 4V @ 100µA 84 nC @ 10 V ±20V 3070 pF @ 50 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFP064N

AUIRFP064N

AUIRFP064 - 55V-60V N-CHANNEL AU

International Rectifier
6,588 -

RFQ

AUIRFP064N

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 59A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRFS8409

AUIRFS8409

MOSFET N-CH 40V 195A D2PAK

International Rectifier
10,156 -

RFQ

AUIRFS8409

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3004WL

AUIRF3004WL

MOSFET N-CH 40V 240A TO262-3

International Rectifier
1,509 -

RFQ

AUIRF3004WL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 10V 1.4mOhm @ 195A, 10V 4V @ 250µA 210 nC @ 10 V ±20V 9450 pF @ 32 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1324STRL

AUIRF1324STRL

MOSFET N-CH 24V 195A D2PAK

International Rectifier
15,026 -

RFQ

AUIRF1324STRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 24 V 195A (Tc) 10V 1.65mOhm @ 195A, 10V 4V @ 250µA 240 nC @ 10 V ±20V 7590 pF @ 24 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7737L2TR

AUIRF7737L2TR

MOSFET N-CH 40V 31A/156A DIRECT

International Rectifier
17,246 -

RFQ

AUIRF7737L2TR

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 31A (Ta), 156A (Tc) 10V 1.9mOhm @ 94A, 10V 4V @ 150µA 134 nC @ 10 V ±20V 5469 pF @ 25 V - 3.3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFS4310ZTRL

AUIRFS4310ZTRL

AUIRFS4310Z - 75V-100V N-CHANNEL

International Rectifier
108,457 -

RFQ

AUIRFS4310ZTRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 6mOhm @ 75A, 10V 4V @ 150µA 170 nC @ 10 V ±20V 6860 pF @ 50 V - 250W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRFP4409

AUIRFP4409

MOSFET N-CH 300V 38A TO247AC

International Rectifier
8,850 -

RFQ

AUIRFP4409

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 38A (Tc) 10V 69mOhm @ 24A, 10V 5V @ 250µA 125 nC @ 10 V ±20V 5168 pF @ 50 V - 341W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRLS3034-7TRL

AUIRLS3034-7TRL

MOSFET N-CH 40V 240A D2PAK

International Rectifier
4,680 -

RFQ

AUIRLS3034-7TRL

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 240A (Tc) 4.5V, 10V 1.4mOhm @ 200A, 10V 2.5V @ 250µA 180 nC @ 4.5 V ±20V 10990 pF @ 40 V - 380W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF1404S

AUIRF1404S

MOSFET N-CH 40V 75A D2PAK

International Rectifier
22,481 -

RFQ

AUIRF1404S

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9230

IRF9230

200V, P-CHANNEL REPETITIVE AVALA

International Rectifier
11,307 -

RFQ

IRF9230

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF9240

IRF9240

HEXFET POWER MOSFET

International Rectifier
11,812 -

RFQ

IRF9240

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFP3306PBF

IRFP3306PBF

IRFP3306 - 12V-300V N-CHANNEL PO

International Rectifier
2,933 -

RFQ

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 60 V 120A (Tc) 10V 4.2mOhm @ 75A, 10V 4V @ 150µA 120 nC @ 10 V ±20V 4520 pF @ 50 V - 220W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB4332PBF

IRFB4332PBF

IRFB4332 - 12V-300V N-CHANNEL PO

International Rectifier
2,154 -

RFQ

IRFB4332PBF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 250 V 60A (Tc) 10V 33mOhm @ 35A, 10V 5V @ 250µA 150 nC @ 10 V ±30V 5860 pF @ 25 V - 390W (Tc) -40°C ~ 175°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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