Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMXB75UPE147

PMXB75UPE147

P-CHANNEL MOSFET

NXP USA Inc.
4,088,434 -

RFQ

PMXB75UPE147

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMN70XP115

PMN70XP115

P-CHANNEL MOSFET

NXP USA Inc.
523,475 -

RFQ

PMN70XP115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMZB200UNE315

PMZB200UNE315

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
156,850 -

RFQ

PMZB200UNE315

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMN70XPE,115

PMN70XPE,115

NOW NEXPERIA PMN70XPE - SC-74

NXP USA Inc.
55,858 -

RFQ

PMN70XPE,115

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 3.2A (Ta) 2.5V, 4.5V 85mOhm @ 2A, 4.5V 1.25V @ 250µA 7.8 nC @ 4.5 V ±12V 602 pF @ 10 V - 500mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN52XP115

PMN52XP115

P-CHANNEL MOSFET

NXP USA Inc.
636,000 -

RFQ

PMN52XP115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NX2020P1115

NX2020P1115

POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.
262,000 -

RFQ

NX2020P1115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
NX2020N2115

NX2020N2115

POWER FIELD-EFFECT TRANSISTOR

NXP USA Inc.
255,000 -

RFQ

NX2020N2115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMCM4401VPE084

PMCM4401VPE084

PMCM4401 SMALL SIGNAL FET

NXP USA Inc.
279,000 -

RFQ

PMCM4401VPE084

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMDXB550UNE/S500147

PMDXB550UNE/S500147

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
60,000 -

RFQ

PMDXB550UNE/S500147

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMXB75UPE/M5147

PMXB75UPE/M5147

P-CHANNEL MOSFET

NXP USA Inc.
45,000 -

RFQ

PMXB75UPE/M5147

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMZ290UN315

PMZ290UN315

SMALL SIGNAL FET

NXP USA Inc.
19,000 -

RFQ

PMZ290UN315

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMZB380XN,315

PMZB380XN,315

MOSFET N-CH 30V 930MA DFN1006B-3

NXP USA Inc.
243,343 -

RFQ

PMZB380XN,315

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 930mA (Ta) 2.5V, 4.5V 460mOhm @ 200mA, 4.5V 1.5V @ 250µA 0.87 nC @ 4.5 V ±12V 56 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMCXB1000UE147

PMCXB1000UE147

P-CHANNEL MOSFET

NXP USA Inc.
235,000 -

RFQ

PMCXB1000UE147

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMZB300XN,315

PMZB300XN,315

MOSFET N-CH 20V 1A DFN1006B-3

NXP USA Inc.
230,000 -

RFQ

PMZB300XN,315

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1A (Ta) 2.5V, 4.5V 380mOhm @ 200mA, 4.5V 1.5V @ 250µA 0.94 nC @ 4.5 V ±12V 51 pF @ 20 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZB790SN,315

PMZB790SN,315

MOSFET N-CH 60V 650MA DFN1006B-3

NXP USA Inc.
168,722 -

RFQ

PMZB790SN,315

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 650mA (Ta) 4.5V, 10V 940mOhm @ 300mA, 10V 3V @ 250µA 1.37 nC @ 10 V ±20V 35 pF @ 30 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZB420UN,315

PMZB420UN,315

MOSFET N-CH 30V 900MA DFN1006B-3

NXP USA Inc.
116,752 -

RFQ

PMZB420UN,315

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 900mA (Ta) 1.8V, 4.5V 490mOhm @ 200mA, 4.5V 950mV @ 250µA 0.98 nC @ 4.5 V ±8V 65 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN45EN,135

PMN45EN,135

MOSFET N-CH 30V 5.2A 6TSOP

NXP USA Inc.
450,515 -

RFQ

PMN45EN,135

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 5.2A (Tc) - 40mOhm @ 3A, 10V 2V @ 1mA 6.1 nC @ 4.5 V 20V 495 pF @ 25 V - 1.75W (Tc) 150°C (TJ) Surface Mount
ON5257215

ON5257215

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
96,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PMFPB8040XP,115

PMFPB8040XP,115

MOSFET P-CH 20V 2.7A HUSON6

NXP USA Inc.
161,589 -

RFQ

PMFPB8040XP,115

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.7A (Ta) 1.8V, 4.5V 102mOhm @ 2.7A, 4.5V 1V @ 250µA 8.6 nC @ 4.5 V ±12V 550 pF @ 10 V Schottky Diode (Isolated) 485mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN27XPE115

PMN27XPE115

SMALL SIGNAL FET

NXP USA Inc.
34,557 -

RFQ

PMN27XPE115

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 4.4A (Ta) 2.5V, 4.5V 30mOhm @ 3A, 4.5V 1.25V @ 250µA 22.5 nC @ 4.5 V ±12V 1770 pF @ 10 V - 530mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 826 Record«Prev1... 1213141516171819...42Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario