Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK7108-40AIE,118

BUK7108-40AIE,118

PFET, 75A I(D), 40V, 0.008OHM, 1

NXP USA Inc.
1,115 -

RFQ

BUK7108-40AIE,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 8mOhm @ 50A, 10V 4V @ 1mA 84 nC @ 10 V ±20V 3140 pF @ 25 V Current Sensing 221W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK661R6-30C118

BUK661R6-30C118

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,741 -

RFQ

BUK661R6-30C118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 1.6mOhm @ 25A, 10V 2.8V @ 1mA 229 nC @ 10 V ±16V 14964 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7908-40AIE127

BUK7908-40AIE127

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,300 -

RFQ

BUK7908-40AIE127

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 8mOhm @ 50A, 10V 4V @ 1mA 84 nC @ 10 V ±20V 3140 pF @ 25 V Current Sensing 221W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMCM650VNEZ

PMCM650VNEZ

MOSFET N-CH 12V 6.4A 6WLCSP

NXP USA Inc.
461,124 -

RFQ

PMCM650VNEZ

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 12 V 6.4A (Ta) 4.5V 25mOhm @ 3A, 4.5V 900mV @ 250µA 15.4 nC @ 4.5 V ±8V 1060 pF @ 6 V - 556mW (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMG85XP,115

PMG85XP,115

NOW NEXPERIA PMG85XP - SMALL SIG

NXP USA Inc.
2,204,534 -

RFQ

PMG85XP,115

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 2A (Tj) 2.5V, 4.5V 115mOhm @ 2A, 4.5V 1.15V @ 250µA 7.2 nC @ 4.5 V ±12V 560 pF @ 10 V - 375mW (Ta), 2.4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMPB33XN,115

PMPB33XN,115

MOSFET N-CH 30V 4.3A DFN2020MD-6

NXP USA Inc.
141,074 -

RFQ

PMPB33XN,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 4.3A (Ta) 2.5V, 4.5V 47mOhm @ 4.3A, 4.5V 1.2V @ 250µA 7.6 nC @ 4.5 V ±12V 505 pF @ 15 V - 1.5W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMPB23XNE,115

PMPB23XNE,115

MOSFET N-CH 20V 7A DFN2020MD-6

NXP USA Inc.
366,798 -

RFQ

PMPB23XNE,115

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 20 V 7A (Ta) 1.8V, 4.5V 22mOhm @ 7A, 4.5V 900mV @ 250µA 17 nC @ 4.5 V ±12V 1136 pF @ 10 V - 1.7W (Ta), 12.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMN28UN,135

PMN28UN,135

MOSFET N-CH 12V 5.7A 6TSOP

NXP USA Inc.
16,992 -

RFQ

PMN28UN,135

Ficha técnica

Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 12 V 5.7A (Tc) 1.8V, 4.5V 34mOhm @ 2A, 4.5V 700mV @ 1mA (Typ) 10.1 nC @ 4.5 V ±8V 740 pF @ 10 V - 1.75W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF530N,127

IRF530N,127

MOSFET N-CH 100V 17A TO220AB

NXP USA Inc.
2,089 -

RFQ

IRF530N,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 10V 110mOhm @ 9A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 633 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF540,127

IRF540,127

MOSFET N-CH 100V 23A TO220AB

NXP USA Inc.
3,471 -

RFQ

IRF540,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 1mA 65 nC @ 10 V ±20V 1187 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF640,127

IRF640,127

MOSFET N-CH 200V 16A TO220AB

NXP USA Inc.
3,087 -

RFQ

IRF640,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 180mOhm @ 8A, 10V 4V @ 1mA 63 nC @ 10 V ±20V 1850 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
BS108,126

BS108,126

MOSFET N-CH 200V 300MA TO92-3

NXP USA Inc.
3,520 -

RFQ

BS108,126

Ficha técnica

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 300mA (Ta) 2.8V 5Ohm @ 100mA, 2.8V 1.8V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BS108/01,126

BS108/01,126

MOSFET N-CH 200V 300MA TO92-3

NXP USA Inc.
2,501 -

RFQ

BS108/01,126

Ficha técnica

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 300mA (Ta) 2.8V 5Ohm @ 100mA, 2.8V 1.8V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BSN254,126

BSN254,126

MOSFET N-CH 250V 310MA TO92-3

NXP USA Inc.
3,947 -

RFQ

BSN254,126

Ficha técnica

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 310mA (Ta) 2.4V, 10V 5Ohm @ 300mA, 10V 2V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BSN254A,126

BSN254A,126

MOSFET N-CH 250V 310MA TO92-3

NXP USA Inc.
2,231 -

RFQ

BSN254A,126

Ficha técnica

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 310mA (Ta) 2.4V, 10V 5Ohm @ 300mA, 10V 2V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BSN304,126

BSN304,126

MOSFET N-CH 300V 300MA TO92-3

NXP USA Inc.
3,315 -

RFQ

BSN304,126

Ficha técnica

Tape & Box (TB) - Obsolete N-Channel MOSFET (Metal Oxide) 300 V 300mA (Ta) 2.4V, 10V 6Ohm @ 250mA, 10V 2V @ 1mA - ±20V 120 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Through Hole
BSP254A,126

BSP254A,126

MOSFET P-CH 250V 200MA TO92-3

NXP USA Inc.
3,882 -

RFQ

BSP254A,126

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 250 V 200mA (Ta) 10V 15Ohm @ 200mA, 10V 2.8V @ 1mA - ±20V 90 pF @ 25 V - 1W (Ta) 150°C (TJ) Through Hole
BSP304A,126

BSP304A,126

MOSFET P-CH 300V 170MA TO92-3

NXP USA Inc.
3,465 -

RFQ

BSP304A,126

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 300 V 170mA (Ta) 10V 17Ohm @ 170mA, 10V 2.55V @ 1mA - ±20V 90 pF @ 25 V - 1W (Ta) -65°C ~ 150°C (TJ) Through Hole
BST72A,112

BST72A,112

MOSFET N-CH 100V 190MA TO92-3

NXP USA Inc.
3,677 -

RFQ

BST72A,112

Ficha técnica

Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 190mA (Ta) 5V 10Ohm @ 150mA, 5V 3.5V @ 1mA - 20V 40 pF @ 10 V - 830mW (Ta) 150°C (TJ) Through Hole
BUK7505-30A,127

BUK7505-30A,127

MOSFET N-CH 30V 75A TO220AB

NXP USA Inc.
3,990 -

RFQ

BUK7505-30A,127

Ficha técnica

Tube TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 10V 5mOhm @ 25A, 10V 4V @ 1mA - ±20V 6000 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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