Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BUK662R7-55C,118

BUK662R7-55C,118

PFET, 120A I(D), 55V, 0.0044OHM

NXP USA Inc.
3,605 -

RFQ

BUK662R7-55C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 120A (Tc) 10V 2.7mOhm @ 25A, 10V 2.8V @ 1mA 258 nC @ 10 V ±16V 15300 pF @ 25 V - 306W (Tc) -55°C ~ 175°C (TJ)
PSMN1R4-40YLD,115

PSMN1R4-40YLD,115

100A, 40V, 0.00185OHM, N CHANNEL

NXP USA Inc.
2,087 -

RFQ

Bulk * Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 1.4mOhm @ 25A, 10V - - ±20V - - 238W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK9107-55ATE,118

BUK9107-55ATE,118

NOW NEXPERIA BUK9107-55ATE -

NXP USA Inc.
3,462 -

RFQ

BUK9107-55ATE,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 4.5V, 10V 6.2mOhm @ 50A, 10V 2V @ 1mA 108 nC @ 5 V ±15V 5836 pF @ 25 V Temperature Sensing Diode 272W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK961R7-40E,118

BUK961R7-40E,118

MOSFET N-CH 40V 120A D2PAK

NXP USA Inc.
3,644 -

RFQ

BUK961R7-40E,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 1.5mOhm @ 25A, 10V 2.1V @ 1mA 105.4 nC @ 5 V ±10V 15010 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK962R1-40E,118

BUK962R1-40E,118

MOSFET N-CH 40V 120A D2PAK

NXP USA Inc.
3,369 -

RFQ

BUK962R1-40E,118

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 5V, 10V 1.8mOhm @ 25A, 10V 2.1V @ 1mA 87.8 nC @ 5 V ±10V 13160 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK7508-55A,127

BUK7508-55A,127

MOSFET N-CH 55V 75A TO220AB

NXP USA Inc.
3,963 -

RFQ

BUK7508-55A,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Ta) - 8mOhm @ 25A, 10V 4V @ 1mA 76 nC @ 0 V ±20V 4352 pF @ 25 V - 254W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK6212-40C,118

BUK6212-40C,118

MOSFET N-CH 40V 50A DPAK

NXP USA Inc.
2,193 -

RFQ

BUK6212-40C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 50A (Ta) - 11.2mOhm @ 12A, 10V 2.8V @ 1mA 33.9 nC @ 10 V ±16V 1900 pF @ 25 V - 80W -55°C ~ 175°C (TJ) Surface Mount
PMR290UNE,115

PMR290UNE,115

MOSFET N-CH 20V 700MA SC75

NXP USA Inc.
3,184 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 700mA (Ta) 1.8V, 4.5V 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68 nC @ 4.5 V ±8V 83 pF @ 10 V - 250mW (Ta), 770mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZB370UNE,315

PMZB370UNE,315

EFFECT TRANSISTOR, 0.9A I(D), 30

NXP USA Inc.
3,171 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 900mA (Ta) 1.8V, 4.5V 490mOhm @ 500mA, 4.5V 1.05V @ 250µA 1.16 nC @ 15 V ±8V 78 pF @ 25 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN4R3-100ES,127

PSMN4R3-100ES,127

TRANSISTOR >30MHZ

NXP USA Inc.
3,790 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 4.5V, 10V 4.3mOhm @ 25A, 10V 4V @ 1mA 170 nC @ 10 V ±20V 9900 pF @ 50 V - 338W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMN80XP,115

PMN80XP,115

MOSFET P-CH 20V 2.5A 6TSOP

NXP USA Inc.
3,758 -

RFQ

PMN80XP,115

Ficha técnica

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) - 102mOhm @ 2.5A, 4.5V 1V @ 250µA 7.5 nC @ 4.5 V ±12V 550 pF @ 10 V - 385mW (Ta), 4W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK7107-55ATE,118

BUK7107-55ATE,118

MOSFET N-CH 55V 75A D2PAK

NXP USA Inc.
2,300 -

RFQ

BUK7107-55ATE,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchPLUS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Ta) - 7mOhm @ 50A, 10V 4V @ 1mA 116 nC @ 10 V ±20V 4500 pF @ 25 V - 272W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK662R5-30C,118-NXP

BUK662R5-30C,118-NXP

PFET, 100A I(D), 30V, 0.0048OHM

NXP USA Inc.
2,924 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 10V 2.8mOhm @ 25A, 10V 2.8V @ 1mA 114 nC @ 10 V ±16V 6960 pF @ 25 V - 204W (Tc) -55°C ~ 175°C (TJ)
BUK7E2R3-40E,127-NXP

BUK7E2R3-40E,127-NXP

PFET, 120A I(D), 40V, 0.0023OHM

NXP USA Inc.
3,247 -

RFQ

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 25A, 10V 4V @ 1mA 109.2 nC @ 10 V ±20V 8500 pF @ 25 V - 293W (Tc) -55°C ~ 175°C (TJ)
BUK9E08-55B,127-NXP

BUK9E08-55B,127-NXP

PFET, 75A I(D), 55V, 0.0093OHM

NXP USA Inc.
3,264 -

RFQ

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 5V, 10V 7mOhm @ 25A, 10V 2V @ 1mA 45 nC @ 5 V ±15V 5280 pF @ 25 V - 203W (Tc) -55°C ~ 175°C (TJ)
PH3120L,115-NXP

PH3120L,115-NXP

POWER FIELD-EFFECT TRANSISTOR, 1

NXP USA Inc.
2,837 -

RFQ

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 100A (Tc) 4.5V, 10V 2.65mOhm @ 25A, 10V 2V @ 1mA 48.5 nC @ 4.5 V ±20V 4457 pF @ 10 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN070-200P,127-NXP

PSMN070-200P,127-NXP

POWER FIELD-EFFECT TRANSISTOR, 3

NXP USA Inc.
2,267 -

RFQ

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 35A (Tc) 10V 70mOhm @ 17A, 10V 4V @ 1mA 77 nC @ 10 V ±20V 4570 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUK7E5R2-100E,127-NXP

BUK7E5R2-100E,127-NXP

PFET, 120A I(D), 100V, 0.0052OHM

NXP USA Inc.
3,594 -

RFQ

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 5.2mOhm @ 25A, 10V 4V @ 1mA 180 nC @ 10 V ±20V 11810 pF @ 25 V - 349W (Tc) -55°C ~ 175°C (TJ) Through Hole
PMN27UP,115-NXP

PMN27UP,115-NXP

MOSFET P-CH 20V 5.7A 6TSOP

NXP USA Inc.
2,720 -

RFQ

PMN27UP,115-NXP

Ficha técnica

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 5.7A (Ta) - 32mOhm @ 2.4A, 4.5V 950mV @ 250µA 31 nC @ 4.5 V ±8V 2340 pF @ 10 V - 540mW (Ta), 6.25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BUK625R0-40C,118-NXP

BUK625R0-40C,118-NXP

MOSFET N-CH 40V 90A DPAK

NXP USA Inc.
2,518 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Ta) - 5mOhm @ 25A, 10V 2.8V @ 1mA 88 nC @ 10 V ±16V 5200 pF @ 25 V - 158W (Ta) -55°C ~ 175°C (TJ) Surface Mount
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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