Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
ON5258215

ON5258215

NOW NEXPERIA ON5258 - RF MOSFET

NXP USA Inc.
696,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSP126/S911115

BSP126/S911115

N-CHANNEL POWER MOSFET

NXP USA Inc.
204,767 -

RFQ

BSP126/S911115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK9245-55A/C1118

BUK9245-55A/C1118

N-CHANNEL POWER MOSFET

NXP USA Inc.
15,000 -

RFQ

BUK9245-55A/C1118

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK6228-55C,118

BUK6228-55C,118

PFET, 31A I(D), 55V, 0.044OHM, 1

NXP USA Inc.
2,867 -

RFQ

BUK6228-55C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 29mOhm @ 10A, 10V 2.8V @ 1mA 20.2 nC @ 10 V ±16V 1340 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PSMN6R0-25YLD115

PSMN6R0-25YLD115

N-CHANNEL POWER MOSFET

NXP USA Inc.
39,000 -

RFQ

PSMN6R0-25YLD115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PH9130AL115

PH9130AL115

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
511,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
PMN40UPEA115

PMN40UPEA115

P-CHANNEL MOSFET

NXP USA Inc.
46,497 -

RFQ

PMN40UPEA115

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 20 V 4.7A (Ta) 1.8V, 4.5V 43mOhm @ 3A, 4.5V 950mV @ 250µA 23 nC @ 4.5 V ±8V 1820 pF @ 10 V - 500mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSP225/S911115

BSP225/S911115

P-CHANNEL MOSFET

NXP USA Inc.
313,000 -

RFQ

BSP225/S911115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSH207,135

BSH207,135

MOSFET P-CH 12V 1.52A 6TSOP

NXP USA Inc.
66,873 -

RFQ

BSH207,135

Ficha técnica

Bulk - Obsolete P-Channel MOSFET (Metal Oxide) 12 V 1.52A (Ta) 1.8V, 4.5V 120mOhm @ 1A, 4.5V 600mV @ 1mA (Typ) 8.8 nC @ 4.5 V ±8V 500 pF @ 9.6 V - 417mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUK9230-55A/C1118

BUK9230-55A/C1118

N-CHANNEL POWER MOSFET

NXP USA Inc.
31,793 -

RFQ

BUK9230-55A/C1118

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7230-55A/C1118

BUK7230-55A/C1118

N-CHANNEL POWER MOSFET

NXP USA Inc.
15,000 -

RFQ

BUK7230-55A/C1118

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7226-75A118

BUK7226-75A118

N-CHANNEL POWER MOSFET

NXP USA Inc.
15,044 -

RFQ

BUK7226-75A118

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK7575-100A,127

BUK7575-100A,127

MOSFET N-CH 100V 23A TO220AB

NXP USA Inc.
10,760 -

RFQ

BUK7575-100A,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 23A (Ta) - 75mOhm @ 13A, 10V 4V @ 1mA - ±20V 1210 pF @ 25 V - 99W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK9245-55A,118

BUK9245-55A,118

TRANSISTOR >30MHZ

NXP USA Inc.
1,063 -

RFQ

BUK9245-55A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4.5V, 10V 40mOhm @ 5A, 10V 2V @ 1mA 14 nC @ 5 V ±15V 1006 pF @ 25 V - 70W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHD71NQ03LT,118

PHD71NQ03LT,118

TRANSISTOR >30MHZ

NXP USA Inc.
63,000 -

RFQ

PHD71NQ03LT,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 5V, 10V 10mOhm @ 25A, 10V 2.5V @ 1mA 13.2 nC @ 5 V ±20V 1220 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PHM10030DLS115

PHM10030DLS115

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
24,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK624R5-30C,118

BUK624R5-30C,118

PFET, 90A I(D), 30V, 0.0075OHM

NXP USA Inc.
24,820 -

RFQ

BUK624R5-30C,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 90A (Tc) 10V 4.5mOhm @ 25A, 10V 2.8V @ 1mA 78 nC @ 10 V ±16V 4707 pF @ 25 V - 158W (Tc) -55°C ~ 175°C (TJ)
PH3530DL115

PH3530DL115

POWER TRANSISTOR, MOSFET

NXP USA Inc.
24,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUK9529-100B/C127

BUK9529-100B/C127

N-CHANNEL POWER MOSFET

NXP USA Inc.
37,576 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
ON5441518

ON5441518

NOW NEXPERIA ON5441 - RF MOSFET

NXP USA Inc.
32,000 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
Total 826 Record«Prev1... 1314151617181920...42Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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