Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
PMCM6501VNE023

PMCM6501VNE023

PMCM6501 N-CHANNEL, MOSFET

NXP USA Inc.
3,997 -

RFQ

PMCM6501VNE023

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMV20XNE215

PMV20XNE215

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
3,744 -

RFQ

PMV20XNE215

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMV90ENE215

PMV90ENE215

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
3,618 -

RFQ

PMV90ENE215

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PMZ550UNE315

PMZ550UNE315

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
3,377 -

RFQ

PMZ550UNE315

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN1R5-30BLE118

PSMN1R5-30BLE118

N-CHANNEL POWER MOSFET

NXP USA Inc.
2,939 -

RFQ

PSMN1R5-30BLE118

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN035-150P

PSMN035-150P

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,911 -

RFQ

PSMN035-150P

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN165-200K518

PSMN165-200K518

SMALL SIGNAL N-CHANNEL MOSFET

NXP USA Inc.
2,738 -

RFQ

PSMN165-200K518

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 2.9A (Tc) 10V 165mOhm @ 2.5A, 10V 4V @ 1mA 40 nC @ 10 V ±20V 1330 pF @ 25 V - 3.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN2R4-30MLD115

PSMN2R4-30MLD115

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,958 -

RFQ

PSMN2R4-30MLD115

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
PSMN2R5-60PL127

PSMN2R5-60PL127

N-CHANNEL POWER MOSFET

NXP USA Inc.
3,575 -

RFQ

PSMN2R5-60PL127

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUK752R3-40E,127

BUK752R3-40E,127

MOSFET N-CH 40V 120A TO220AB

NXP USA Inc.
3,928 -

RFQ

BUK752R3-40E,127

Ficha técnica

Tube Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 120A (Ta) - 2.3mOhm @ 25A, 10V 4V @ 1mA 109.2 nC @ 10 V ±20V 8500 pF @ 25 V - 293W (Ta) -55°C ~ 175°C (TJ) Through Hole
BUK764R0-75C,118

BUK764R0-75C,118

PFET, 100A I(D), 75V, 0.004OHM

NXP USA Inc.
3,433 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) 10V 4mOhm @ 25A, 10V 4V @ 1mA 142 nC @ 10 V ±20V 11659 pF @ 25 V - 333W (Tc) -55°C ~ 175°C (TJ)
BUK9107-40ATC,118

BUK9107-40ATC,118

BUK9107-40ATC - D2PAK

NXP USA Inc.
3,038 -

RFQ

BUK9107-40ATC,118

Ficha técnica

Bulk TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 6.2mOhm @ 50A, 10V 2V @ 1mA - ±15V 5836 pF @ 25 V Temperature Sensing Diode 272W (Tc) -55°C ~ 175°C (TJ) Surface Mount
PMK35EP,518

PMK35EP,518

TRANSISTOR >30MHZ

NXP USA Inc.
3,391 -

RFQ

PMK35EP,518

Ficha técnica

Bulk TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 14.9A (Tc) 10V 19mOhm @ 9.2A, 10V 3V @ 250µA 42 nC @ 10 V ±25V 2100 pF @ 25 V - 6.9W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PSMN023-40YLCX

PSMN023-40YLCX

MOSFET N-CH 40V 24A LFPAK56

NXP USA Inc.
3,244 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 24A (Tc) 4.5V, 10V 23mOhm @ 5A, 10V 1.95V @ 1mA 8.4 nC @ 10 V ±20V 520 pF @ 20 V - 25W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK761R4-30E,118

BUK761R4-30E,118

MOSFET N-CH 30V 120A D2PAK

NXP USA Inc.
5,055 -

RFQ

Tape & Reel (TR),Cut Tape (CT),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 10V 1.45mOhm @ 25A, 10V 4V @ 1mA 130 nC @ 10 V ±20V 9580 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK961R5-30E,118

BUK961R5-30E,118

MOSFET N-CH 30V 120A D2PAK

NXP USA Inc.
4,767 -

RFQ

Tape & Reel (TR),Cut Tape (CT),Bulk TrenchMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 120A (Tc) 5V, 10V 1.3mOhm @ 25A, 10V 2.1V @ 1mA 93.4 nC @ 5 V ±10V 14500 pF @ 25 V - 324W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK6211-75C,118

BUK6211-75C,118

MOSFET N-CH 75V 74A DPAK

NXP USA Inc.
3,391 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 74A (Ta) - 11mOhm @ 25A, 10V 2.8V @ 1mA 81 nC @ 10 V ±16V 5251 pF @ 25 V - 158W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK6218-40C,118

BUK6218-40C,118

PFET, 42A I(D), 40V, 0.028OHM, 1

NXP USA Inc.
3,605 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 42A (Tc) 10V 16mOhm @ 10A, 10V 2.8V @ 1mA 22 nC @ 10 V ±16V 1170 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK96180-100A,118

BUK96180-100A,118

MOSFET N-CH 100V 11A D2PAK

NXP USA Inc.
2,156 -

RFQ

BUK96180-100A,118

Ficha técnica

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta) - 173mOhm @ 5A, 10V 2V @ 1mA - ±15V 619 pF @ 25 V - 54W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BUK6215-75C,118

BUK6215-75C,118

MOSFET N-CH 75V 57A DPAK

NXP USA Inc.
3,214 -

RFQ

Bulk Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 57A (Ta) - 15mOhm @ 15A, 10V 2.8V @ 1mA 61.8 nC @ 10 V ±16V 3900 pF @ 25 V - 128W (Ta) -55°C ~ 175°C (TJ) Surface Mount
Total 826 Record«Prev1... 89101112131415...42Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario