Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP60R385CP

IPP60R385CP

MOSFET N-CH 600V 9A TO220-3-1

Infineon Technologies
525 -

RFQ

IPP60R385CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9A (Tc) - 385mOhm @ 5.2A, 10V 3.5V @ 340µA 22 nC @ 10 V ±20V 790 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI60R280C6

IPI60R280C6

MOSFET N-CH 600V 13.8A TO262-3

Infineon Technologies
1,083 -

RFQ

IPI60R280C6

Ficha técnica

Bulk CoolMOS™ C6 Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) - 280mOhm @ 6.5A, 10V 3.5V @ 430µA 43 nC @ 10 V ±20V 950 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI072N10N3 G

IPI072N10N3 G

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

IPI072N10N3 G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP040N08NF2SAKMA1

IPP040N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies
870 -

RFQ

IPP040N08NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 80 V 22A (Ta), 115A (Tc) 6V, 10V 4mOhm @ 80A, 10V 3.8V @ 85µA 81 nC @ 10 V ±20V 3800 pF @ 40 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP040N06NF2SAKMA1

IPP040N06NF2SAKMA1

MOSFET N-CH

Infineon Technologies
961 -

RFQ

IPP040N06NF2SAKMA1

Ficha técnica

Tube OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 80A (Tc) 6V, 10V 4mOhm @ 80A, 10V 3.3V @ 50µA 44 nC @ 10 V ±20V 3375 pF @ 30 V - 3W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW65R280C6

IPW65R280C6

650 V COOLMOS E6 POWER MOSFET

Infineon Technologies
950 -

RFQ

IPW65R280C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPW12N50C3

SPW12N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,729 -

RFQ

SPW12N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF3808PBF

IRF3808PBF

MOSFET N-CH 75V 140A TO220AB

Infineon Technologies
206 -

RFQ

IRF3808PBF

Ficha técnica

Tube HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 7mOhm @ 82A, 10V 4V @ 250µA 220 nC @ 10 V ±20V 5310 pF @ 25 V - 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB051NE8NG

IPB051NE8NG

N-CHANNEL POWER MOSFET

Infineon Technologies
775 -

RFQ

IPB051NE8NG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPU95R450P7AKMA1

IPU95R450P7AKMA1

MOSFET N-CH 950V 14A TO251-3

Infineon Technologies
974 -

RFQ

IPU95R450P7AKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 950 V 14A (Tc) 10V 450mOhm @ 7.2A, 10V 3.5V @ 360µA 35 nC @ 10 V ±20V 1053 pF @ 400 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP80N06S2-07AKSA4

IPP80N06S2-07AKSA4

N-CHANNEL POWER MOSFET

Infineon Technologies
7,220 -

RFQ

IPP80N06S2-07AKSA4

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 6.6mOhm @ 68A, 10V 4V @ 180µA 110 nC @ 10 V ±20V 3400 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R280P6FKSA1

IPW60R280P6FKSA1

MOSFET N-CH 600V 13.8A TO247-3

Infineon Technologies
100 -

RFQ

IPW60R280P6FKSA1

Ficha técnica

Tube CoolMOS™ P6 Active N-Channel MOSFET (Metal Oxide) 600 V 13.8A (Tc) 10V 280mOhm @ 5.2A, 10V 4.5V @ 430µA 25.5 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPW11N60C3

SPW11N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies
7,369 -

RFQ

SPW11N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP15N65C3XKSA1

SPP15N65C3XKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
6,300 -

RFQ

SPP15N65C3XKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BTS244Z

BTS244Z

N-CHANNEL POWER MOSFET

Infineon Technologies
3,447 -

RFQ

BTS244Z

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IPA65R380E6XKSA1

IPA65R380E6XKSA1

MOSFET N-CH 650V 10.6A TO220-FP

Infineon Technologies
950 -

RFQ

IPA65R380E6XKSA1

Ficha técnica

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 31W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI15N65C3

SPI15N65C3

N-CHANNEL POWER MOSFET

Infineon Technologies
400 -

RFQ

SPI15N65C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 15A (Tc) 10V 280mOhm @ 9.4A, 10V 3.9V @ 675µA 63 nC @ 10 V ±20V 1600 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI320N203G

IPI320N203G

N-CHANNEL POWER MOSFET

Infineon Technologies
350 -

RFQ

IPI320N203G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPW65R190E6

IPW65R190E6

N-CHANNEL POWER MOSFET

Infineon Technologies
539 -

RFQ

IPW65R190E6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPW11N60CFD

SPW11N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
391 -

RFQ

SPW11N60CFD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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