Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPA082N10NF2SXKSA1

IPA082N10NF2SXKSA1

TRENCH >=100V PG-TO220-3

Infineon Technologies
500 -

RFQ

IPA082N10NF2SXKSA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 46A (Tc) 6V, 10V 8.2mOhm @ 30A, 10V 3.8V @ 46µA 42 nC @ 10 V ±20V 2000 pF @ 50 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI65R280C6

IPI65R280C6

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

IPI65R280C6

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPI11N60S5

SPI11N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
368 -

RFQ

SPI11N60S5

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFB7540PBF

IRFB7540PBF

MOSFET N-CH 60V 110A TO220

Infineon Technologies
560 -

RFQ

IRFB7540PBF

Ficha técnica

Tube HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 6V, 10V 5.1mOhm @ 65A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4555 pF @ 25 V - 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP129N10NF2SAKMA1

IPP129N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies
915 -

RFQ

IPP129N10NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Ta), 52A (Tc) 6V, 10V 12.9mOhm @ 30A, 10V 3.8V @ 30µA 28 nC @ 10 V ±20V 1300 pF @ 50 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP082N10NF2SAKMA1

IPP082N10NF2SAKMA1

TRENCH >=100V

Infineon Technologies
556 -

RFQ

IPP082N10NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 15A (Ta), 77A (Tc) 6V, 10V 8.2mOhm @ 50A, 10V 3.8V @ 46µA 42 nC @ 10 V ±20V 2000 pF @ 50 V - 3.8W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80N04S3-03

IPI80N04S3-03

N-CHANNEL AUTOMOTIVE MOSFET

Infineon Technologies
8,000 -

RFQ

IPI80N04S3-03

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPA50R350CP

IPA50R350CP

10A, 500V, 0.35OHM, N-CHANNEL

Infineon Technologies
500 -

RFQ

IPA50R350CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - -
IPB22N03S4L-15ATMA1

IPB22N03S4L-15ATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
8,000 -

RFQ

IPB22N03S4L-15ATMA1

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 22A (Tc) 4.5V, 10V 14.6mOhm @ 22A, 10V 2.2V @ 10µA 14 nC @ 10 V ±16V 980 pF @ 25 V - 31W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPW50R350CP

IPW50R350CP

N-CHANNEL POWER MOSFET

Infineon Technologies
4,320 -

RFQ

IPW50R350CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 350mOhm @ 5.6A, 10V 3.5V @ 370µA 25 nC @ 10 V ±20V 1020 pF @ 100 V - 89W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI034NE7N3G

IPI034NE7N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
7,234 -

RFQ

IPI034NE7N3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 100A (Tc) - 3.4mOhm @ 100A, 10V 3.8V @ 155µA 117 nC @ 10 V - 8130 pF @ 37.5 V - 214W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP80N06S-08

SPP80N06S-08

N-CHANNEL POWER MOSFET

Infineon Technologies
2,000 -

RFQ

SPP80N06S-08

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPA040N06NM5SXKSA1

IPA040N06NM5SXKSA1

MOSFET N-CH 60V 72A TO220

Infineon Technologies
495 -

RFQ

IPA040N06NM5SXKSA1

Ficha técnica

Tube OptiMOS™5 Active N-Channel MOSFET (Metal Oxide) 60 V 72A (Tc) 6V, 10V 4mOhm @ 72A, 10V 3.3V @ 50µA 50 nC @ 10 V ±20V 3500 pF @ 30 V - 36W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI60R299CP

IPI60R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
8,500 -

RFQ

IPI60R299CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 29 nC @ 10 V ±20V 1100 pF @ 100 V - 96W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP055N08NF2SAKMA1

IPP055N08NF2SAKMA1

TRENCH 40<-<100V

Infineon Technologies
607 -

RFQ

IPP055N08NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 80 V 18.5A (Ta), 99A (Tc) 6V, 10V 5.5mOhm @ 60A, 10V 3.8V @ 55µA 54 nC @ 10 V ±20V 2500 pF @ 40 V - 3.8W (Ta), 107W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP019N06NF2SAKMA1

IPP019N06NF2SAKMA1

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies
998 -

RFQ

IPP019N06NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 33A (Ta), 185A (Tc) 6V, 10V 1.9mOhm @ 100A, 10V 3.3V @ 129µA 162 nC @ 10 V ±20V 7300 pF @ 30 V - 3.8W (Ta), 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPW07N60CFD

SPW07N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
2,922 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPW50R299CP

IPW50R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
9,838 -

RFQ

IPW50R299CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPAN60R180P7SXKSA1

IPAN60R180P7SXKSA1

MOSFET 600V TO220 FULL PACK

Infineon Technologies
500 -

RFQ

Tube CoolMOS™ Active - - 600 V 18A (Tc) - - - - - - - - - Through Hole
IPP06CN10LG

IPP06CN10LG

N-CHANNEL POWER MOSFET

Infineon Technologies
490 -

RFQ

IPP06CN10LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
Total 8399 Record«Prev12345678910...420Next»
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1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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