Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPS70R600P7SAKMA1

IPS70R600P7SAKMA1

MOSFET N-CH 700V 8.5A TO251-3

Infineon Technologies
842 -

RFQ

IPS70R600P7SAKMA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V 8.5A (Tc) 10V 600mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5 nC @ 10 V ±16V 364 pF @ 400 V - 43W (Tc) -40°C ~ 150°C (TJ) Through Hole
BUZ32HXKSA1

BUZ32HXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
7,900 -

RFQ

BUZ32HXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPP15P10PH

SPP15P10PH

15A, 100V, 0.24OHM, P-CHANNEL

Infineon Technologies
944 -

RFQ

SPP15P10PH

Ficha técnica

Bulk Automotive, AEC-Q101, SIPMOS® Active P-Channel MOSFET (Metal Oxide) 100 V 15A (Tc) 10V 240mOhm @ 10.6A, 10V 2.1V @ 1.54mA 48 nC @ 10 V ±20V 1280 pF @ 25 V - 128W (Tc) -55°C ~ 175°C (TJ)
SPA07N60C2

SPA07N60C2

N-CHANNEL POWER MOSFET

Infineon Technologies
1,403 -

RFQ

SPA07N60C2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ32H3045A

BUZ32H3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
1,249 -

RFQ

BUZ32H3045A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ31H3046

BUZ31H3046

N-CHANNEL POWER MOSFET

Infineon Technologies
700 -

RFQ

BUZ31H3046

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP139N08N3GXKSA1

IPP139N08N3GXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
632 -

RFQ

IPP139N08N3GXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPD50N03S2-07G

SPD50N03S2-07G

N-CHANNEL POWER MOSFET

Infineon Technologies
4,956 -

RFQ

SPD50N03S2-07G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP65R600C6

IPP65R600C6

N-CHANNEL POWER MOSFET

Infineon Technologies
1,791 -

RFQ

IPP65R600C6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 2.1A, 10V 3.5V @ 210µA 23 nC @ 10 V ±20V 440 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPI80N03S4L-03

IPI80N03S4L-03

N-CHANNEL POWER MOSFET

Infineon Technologies
952 -

RFQ

IPI80N03S4L-03

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 80A, 10V 2.2V @ 90µA 140 nC @ 10 V ±16V 9750 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPB60R600CP

IPB60R600CP

N-CHANNEL POWER MOSFET

Infineon Technologies
6,970 -

RFQ

IPB60R600CP

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF6811STRPBF-INF

IRF6811STRPBF-INF

DIRECTFET PLUS POWER MOSFET

Infineon Technologies
5,534 -

RFQ

IRF6811STRPBF-INF

Ficha técnica

Bulk DirectFET® Active N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 74A (Tc) - 3.7mOhm @ 19A, 10V 2.1V @ 35µA 17 nC @ 4.5 V ±16V 1590 pF @ 13 V - 2.1W (Ta), 32W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPP65R660CFD

IPP65R660CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
4,564 -

RFQ

IPP65R660CFD

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB04N60C3E3045A

SPB04N60C3E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
2,000 -

RFQ

SPB04N60C3E3045A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP100N06S3L-04IN

IPP100N06S3L-04IN

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPP50R520CP

IPP50R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies
8,144 -

RFQ

IPP50R520CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 7.1A (Tc) 10V 520mOhm @ 3.8A, 10V 3.5V @ 250µA 17 nC @ 10 V ±20V 680 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPD50N03S2-07 G

SPD50N03S2-07 G

N-CHANNEL POWER MOSFET

Infineon Technologies
2,500 -

RFQ

SPD50N03S2-07 G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP80N04S304AKSA1

IPP80N04S304AKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
452 -

RFQ

IPP80N04S304AKSA1

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 4.1mOhm @ 80A, 10V 4V @ 90µA 80 nC @ 10 V ±20V 5200 pF @ 25 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP034N03LG

IPP034N03LG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,250 -

RFQ

IPP034N03LG

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BUZ30A H3045A

BUZ30A H3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

BUZ30A H3045A

Ficha técnica

Bulk SIPMOS® Active N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1234567...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario