Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
BST113A

BST113A

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPB65R380C6

IPB65R380C6

N-CHANNEL POWER MOSFET

Infineon Technologies
3,263 -

RFQ

IPB65R380C6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) 10V 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPP80N04S3-03

IPP80N04S3-03

N-CHANNEL POWER MOSFET

Infineon Technologies
345 -

RFQ

IPP80N04S3-03

Ficha técnica

Bulk * Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.5mOhm @ 80A, 10V 4V @ 120µA 110 nC @ 10 V ±20V 7300 pF @ 25 V - 188W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI50R299CP

IPI50R299CP

N-CHANNEL POWER MOSFET

Infineon Technologies
9,978 -

RFQ

IPI50R299CP

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 12A (Tc) 10V 299mOhm @ 6.6A, 10V 3.5V @ 440µA 31 nC @ 10 V ±20V 1190 pF @ 100 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPB034N06N3G

IPB034N06N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,146 -

RFQ

IPB034N06N3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP08CNE8NG

IPP08CNE8NG

N-CHANNEL POWER MOSFET

Infineon Technologies
925 -

RFQ

IPP08CNE8NG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 85 V 95A (Tc) 10V 6.4mOhm @ 95A, 10V 4V @ 130µA 99 nC @ 10 V ±20V 6690 pF @ 40 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP07N600S5

SPP07N600S5

N-CHANNEL POWER MOSFET

Infineon Technologies
400 -

RFQ

SPP07N600S5

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP070N08N3GXKSA1

IPP070N08N3GXKSA1

N-CHANNEL POWER MOSFET

Infineon Technologies
7,700 -

RFQ

IPP070N08N3GXKSA1

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPAN60R360P7SXKSA1

IPAN60R360P7SXKSA1

MOSFET N-CH 650V 9A TO220

Infineon Technologies
500 -

RFQ

IPAN60R360P7SXKSA1

Ficha técnica

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 9A (Tc) 10V 360mOhm @ 2.7A, 10V 4V @ 140µA 13 nC @ 10 V ±20V 555 pF @ 400 V - 22W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPB03N03LAG

IPB03N03LAG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

IPB03N03LAG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 80A (Tc) 4.5V, 10V 2.7mOhm @ 55A, 10V 2V @ 100µA 57 nC @ 5 V ±20V 7027 pF @ 15 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPP030N06NF2SAKMA1

IPP030N06NF2SAKMA1

TRENCH 40<-<100V PG-TO220-3

Infineon Technologies
1,000 -

RFQ

IPP030N06NF2SAKMA1

Ficha técnica

Tube StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 60 V 26A (Ta), 119A (Tc) 6V, 10V 3.05mOhm @ 70A, 10V 3.3V @ 80µA 102 nC @ 10 V ±20V 4600 pF @ 30 V - 3.8W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPD65R380E6

IPD65R380E6

MOSFET N-CH 650V 10.6A TO252-3

Infineon Technologies
5,090 -

RFQ

IPD65R380E6

Ficha técnica

Bulk CoolMOS™ E6 Active N-Channel MOSFET (Metal Oxide) 650 V 10.6A (Tc) - 380mOhm @ 3.2A, 10V 3.5V @ 320µA 39 nC @ 10 V ±20V 710 pF @ 100 V - 83W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSB012N03LX3G

BSB012N03LX3G

N-CHANNEL POWER MOSFET

Infineon Technologies
5,766 -

RFQ

BSB012N03LX3G

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 39A (Ta), 180A (Tc) 4.5V, 10V 1.2mOhm @ 30A, 10V 2.2V @ 250µA 169 nC @ 10 V ±20V 16900 pF @ 15 V - 2.8W (Ta), 89W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPI07N60C3

SPI07N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,730 -

RFQ

SPI07N60C3

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPP12N50C3

SPP12N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
1,250 -

RFQ

SPP12N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 11.6A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 49 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SP001017058

SP001017058

IPP60R380P6 - 600V N-CHANNEL

Infineon Technologies
1,000 -

RFQ

SP001017058

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPI12N50C3IN

SPI12N50C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
480 -

RFQ

SPI12N50C3IN

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPI16N50C3IN

SPI16N50C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
448 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
SPI16N50C3

SPI16N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
300 -

RFQ

SPI16N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 500 V 16A (Tc) 10V 280mOhm @ 10A, 10V 3.9V @ 675µA 66 nC @ 10 V ±20V 1600 pF @ 25 V - 160W (Tc) -55°C ~ 150°C (TJ) Through Hole
TMOSP12034

TMOSP12034

N-CHANNEL POWER MOSFET

Infineon Technologies
6,270 -

RFQ

TMOSP12034

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+ Promedio diario de RFQ
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20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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