Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRL3215

IRL3215

MOSFET N-CH 150V 12A TO220AB

Infineon Technologies
3,049 -

RFQ

IRL3215

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 12A (Tc) 4V, 10V 166mOhm @ 7.2A, 10V 2V @ 250µA 35 nC @ 5 V ±16V 775 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3402

IRL3402

MOSFET N-CH 20V 85A TO220AB

Infineon Technologies
2,691 -

RFQ

IRL3402

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 4.5V, 7V 8mOhm @ 51A, 7V 700mV @ 250µA (Min) 78 nC @ 4.5 V ±10V 3300 pF @ 15 V - 110W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLI2505

IRLI2505

MOSFET N-CH 55V 58A TO220AB FP

Infineon Technologies
2,308 -

RFQ

IRLI2505

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 58A (Tc) 4V, 10V 8mOhm @ 31A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704

IRF3704

MOSFET N-CH 20V 77A TO220AB

Infineon Technologies
3,465 -

RFQ

IRF3704

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3706

IRF3706

MOSFET N-CH 20V 77A TO220AB

Infineon Technologies
2,402 -

RFQ

IRF3706

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 2.8V, 10V 8.5mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLML5203

IRLML5203

MOSFET P-CH 30V 3A MICRO3/SOT23

Infineon Technologies
2,866 -

RFQ

IRLML5203

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 30 V 3A (Ta) 4.5V, 10V 98mOhm @ 3A, 10V 2.5V @ 250µA 14 nC @ 10 V ±20V 510 pF @ 25 V - 1.25W (Ta) - Surface Mount
IRLMS4502TR

IRLMS4502TR

MOSFET P-CH 12V 5.5A MICRO6

Infineon Technologies
3,488 -

RFQ

IRLMS4502TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 5.5A (Ta) 2.5V, 4.5V 42mOhm @ 5.5A, 4.5V 600mV @ 250µA (Min) 33 nC @ 5 V ±12V 1820 pF @ 10 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7534D1

IRF7534D1

MOSFET P-CH 20V 4.3A MICRO8

Infineon Technologies
2,840 -

RFQ

IRF7534D1

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 2.5V, 4.5V 55mOhm @ 4.3A, 4.5V 1.2V @ 250µA 15 nC @ 5 V ±12V 1066 pF @ 10 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7526D1

IRF7526D1

MOSFET P-CH 30V 2A MICRO8

Infineon Technologies
3,736 -

RFQ

IRF7526D1

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 2A (Ta) 4.5V, 10V 200mOhm @ 1.2A, 10V 1V @ 250µA 11 nC @ 10 V ±20V 180 pF @ 25 V Schottky Diode (Isolated) 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7233TR

IRF7233TR

MOSFET P-CH 12V 9.5A 8SO

Infineon Technologies
2,160 -

RFQ

IRF7233TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) 2.5V, 4.5V 20mOhm @ 9.5A, 4.5V 600mV @ 250µA (Min) 74 nC @ 5 V ±12V 6000 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFB17N20D

IRFB17N20D

MOSFET N-CH 200V 16A TO220AB

Infineon Technologies
2,047 -

RFQ

IRFB17N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB23N20D

IRFB23N20D

MOSFET N-CH 200V 24A TO220AB

Infineon Technologies
2,953 -

RFQ

IRFB23N20D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 24A (Tc) 10V 100mOhm @ 14A, 10V 5.5V @ 250µA 86 nC @ 10 V ±30V 1960 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB33N15D

IRFB33N15D

MOSFET N-CH 150V 33A TO220AB

Infineon Technologies
2,625 -

RFQ

IRFB33N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 56mOhm @ 20A, 10V 5.5V @ 250µA 90 nC @ 10 V ±30V 2020 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFB41N15D

IRFB41N15D

MOSFET N-CH 150V 41A TO220AB

Infineon Technologies
2,266 -

RFQ

IRFB41N15D

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 5.5V @ 250µA 110 nC @ 10 V ±30V 2520 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1104

IRL1104

MOSFET N-CH 40V 104A TO220AB

Infineon Technologies
2,050 -

RFQ

IRL1104

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010EL

IRF1010EL

MOSFET N-CH 60V 84A TO262

Infineon Technologies
3,577 -

RFQ

IRF1010EL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 84A (Tc) 10V 12mOhm @ 50A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3210 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010NL

IRF1010NL

MOSFET N-CH 55V 85A TO262

Infineon Technologies
3,528 -

RFQ

IRF1010NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 85A (Tc) 10V 11mOhm @ 43A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 3210 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1310NL

IRF1310NL

MOSFET N-CH 100V 42A TO262

Infineon Technologies
2,907 -

RFQ

IRF1310NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 36mOhm @ 22A, 10V 4V @ 250µA 110 nC @ 10 V ±20V 1900 pF @ 25 V - 3.8W (Ta), 160W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1404L

IRF1404L

MOSFET N-CH 40V 162A TO262

Infineon Technologies
3,952 -

RFQ

IRF1404L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF2807L

IRF2807L

MOSFET N-CH 75V 82A TO262

Infineon Technologies
3,038 -

RFQ

IRF2807L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 82A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 3820 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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