Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFZ48NL

IRFZ48NL

MOSFET N-CH 55V 64A TO262

Infineon Technologies
2,897 -

RFQ

IRFZ48NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 64A (Tc) 10V 14mOhm @ 32A, 10V 4V @ 250µA 81 nC @ 10 V ±20V 1970 pF @ 25 V - 3.8W (Ta), 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1004L

IRL1004L

MOSFET N-CH 40V 130A TO262

Infineon Technologies
2,988 -

RFQ

IRL1004L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 130A (Tc) 4.5V, 10V 6.5mOhm @ 78A, 10V 1V @ 250µA 100 nC @ 4.5 V ±16V 5330 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1104L

IRL1104L

MOSFET N-CH 40V 104A TO262

Infineon Technologies
2,249 -

RFQ

IRL1104L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 104A (Tc) 4.5V, 10V 8mOhm @ 62A, 10V 1V @ 250µA 68 nC @ 4.5 V ±16V 3445 pF @ 25 V - 2.4W (Ta), 167W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL2203NL

IRL2203NL

MOSFET N-CH 30V 116A TO262

Infineon Technologies
2,283 -

RFQ

IRL2203NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 116A (Tc) 4.5V, 10V 7mOhm @ 60A, 10V 3V @ 250µA 60 nC @ 4.5 V ±16V 3290 pF @ 25 V - 3.8W (Ta), 180W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL2505L

IRL2505L

MOSFET N-CH 55V 104A TO262

Infineon Technologies
2,665 -

RFQ

IRL2505L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL2910L

IRL2910L

MOSFET N-CH 100V 55A TO262

Infineon Technologies
2,479 -

RFQ

IRL2910L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3303L

IRL3303L

MOSFET N-CH 30V 38A TO262

Infineon Technologies
2,398 -

RFQ

IRL3303L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3705NL

IRL3705NL

MOSFET N-CH 55V 89A TO262

Infineon Technologies
2,555 -

RFQ

IRL3705NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 89A (Tc) 4V, 10V 10mOhm @ 46A, 10V 2V @ 250µA 98 nC @ 5 V ±16V 3600 pF @ 25 V - 3.8W (Ta), 170W (Tc) -55°C ~ 175°C (TJ) Through Hole
94-4764

94-4764

MOSFET N-CH 30V 140A TO262

Infineon Technologies
3,579 -

RFQ

94-4764

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL520NL

IRL520NL

MOSFET N-CH 100V 10A TO262

Infineon Technologies
2,233 -

RFQ

IRL520NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 180mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL540NL

IRL540NL

MOSFET N-CH 100V 36A TO262

Infineon Technologies
2,424 -

RFQ

IRL540NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 4V, 10V 44mOhm @ 18A, 10V 2V @ 250µA 74 nC @ 5 V ±16V 1800 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ24NL

IRLZ24NL

MOSFET N-CH 55V 18A TO262

Infineon Technologies
3,424 -

RFQ

IRLZ24NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 4V, 10V 60mOhm @ 11A, 10V 2V @ 250µA 15 nC @ 5 V ±16V 480 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ34NL

IRLZ34NL

MOSFET N-CH 55V 30A TO262

Infineon Technologies
3,846 -

RFQ

IRLZ34NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 4V, 10V 35mOhm @ 16A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ44NL

IRLZ44NL

MOSFET N-CH 55V 47A TO262

Infineon Technologies
2,957 -

RFQ

IRLZ44NL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 47A (Tc) 4V, 10V 22mOhm @ 25A, 10V 2V @ 250µA 48 nC @ 5 V ±16V 1700 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7207

IRF7207

MOSFET P-CH 20V 5.4A 8SO

Infineon Technologies
3,249 -

RFQ

IRF7207

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Tc) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 780 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7233

IRF7233

MOSFET P-CH 12V 9.5A 8SO

Infineon Technologies
3,373 -

RFQ

IRF7233

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 12 V 9.5A (Ta) 2.5V, 4.5V 20mOhm @ 9.5A, 4.5V 600mV @ 250µA (Min) 74 nC @ 5 V ±12V 6000 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF5210L

IRF5210L

MOSFET P-CH 100V 40A TO262

Infineon Technologies
2,020 -

RFQ

IRF5210L

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 10V 60mOhm @ 24A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 2700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF5305L

IRF5305L

MOSFET P-CH 55V 31A TO262

Infineon Technologies
3,674 -

RFQ

IRF5305L

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 60mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF6215L

IRF6215L

MOSFET P-CH 150V 13A TO262

Infineon Technologies
2,311 -

RFQ

IRF6215L

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 290mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 3.8W (Ta), 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9520NL

IRF9520NL

MOSFET P-CH 100V 6.8A TO262

Infineon Technologies
2,530 -

RFQ

IRF9520NL

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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