Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLC034NB

IRLC034NB

MOSFET 55V 28A DIE

Infineon Technologies
3,898 -

RFQ

Bulk - Obsolete - MOSFET (Metal Oxide) 55 V 28A 10V 40mOhm @ 28A, 10V - - - - - - - Surface Mount
IRLC014NB

IRLC014NB

MOSFET 55V 2.8A DIE

Infineon Technologies
2,477 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 55 V 2.8A 10V 140mOhm @ 2.8A, 10V - - - - - - - Surface Mount
IRFC3415B

IRFC3415B

MOSFET 150V 43A DIE

Infineon Technologies
2,692 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 150 V 43A 10V 42mOhm @ 43A, 10V - - - - - - - Surface Mount
IRF6217TRPBF-1

IRF6217TRPBF-1

MOSFET P-CH 150V 700MA 8SO

Infineon Technologies
2,029 -

RFQ

IRF6217TRPBF-1

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 700mA (Ta) 10V 2.4Ohm @ 420mA, 10V 5V @ 250µA 9 nC @ 10 V ±20V 150 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFC9130NB

IRFC9130NB

MOSFET 100V 14A DIE

Infineon Technologies
2,068 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 100 V 14A 10V 200mOhm @ 14A, 10V - - - - - - - Surface Mount
IRFC7416B

IRFC7416B

MOSFET 30V 10A DIE

Infineon Technologies
2,255 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 30 V 10A 10V 20mOhm @ 10A, 10V - - - - - - - Surface Mount
IRLC024NB

IRLC024NB

MOSFET 55V 17A DIE

Infineon Technologies
3,070 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 55 V 17A 10V 65mOhm @ 17A, 10V - - - - - - - Surface Mount
IAUT300N08S5N011ATMA1

IAUT300N08S5N011ATMA1

MOSFET_(75V 120V( PG-HSOF-8

Infineon Technologies
2,753 -

RFQ

IAUT300N08S5N011ATMA1

Ficha técnica

Tape & Reel (TR) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 410A (Tj) 6V, 10V 1.1mOhm @ 100A, 10V 3.8V @ 275µA 231 nC @ 10 V ±20V 16250 pF @ 40 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3805STRL

AUIRF3805STRL

MOSFET N-CH 55V 160A D2PAK

Infineon Technologies
2,512 -

RFQ

AUIRF3805STRL

Ficha técnica

Tape & Reel (TR) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) - 3.3mOhm @ 75A, 10V 4V @ 250µA 290 nC @ 10 V - 7960 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF3805S-7TRL

AUIRF3805S-7TRL

MOSFET N-CH 55V 160A D2PAK

Infineon Technologies
2,195 -

RFQ

AUIRF3805S-7TRL

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 55 V 160A (Tc) 10V 2.6mOhm @ 140A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7820 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI120N04S302AKSA1

IPI120N04S302AKSA1

MOSFET N-CH 40V 120A TO262-3

Infineon Technologies
50,937 -

RFQ

IPI120N04S302AKSA1

Ficha técnica

Bulk,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 80A, 10V 4V @ 230µA 210 nC @ 10 V ±20V 14300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP120N04S302AKSA1

IPP120N04S302AKSA1

MOSFET N-CH 40V 120A TO220-3

Infineon Technologies
3,718 -

RFQ

IPP120N04S302AKSA1

Ficha técnica

Tube,Tube OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 40 V 120A (Tc) 10V 2.3mOhm @ 80A, 10V 4V @ 230µA 210 nC @ 10 V ±20V 14300 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPW60R199CPFKSA1

IPW60R199CPFKSA1

MOSFET N-CH 600V 16A TO247-3

Infineon Technologies
2,569 -

RFQ

IPW60R199CPFKSA1

Ficha técnica

Bulk,Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 600 V 16A (Tc) 10V 199mOhm @ 9.9A, 10V 3.5V @ 660µA 43 nC @ 10 V ±20V 1520 pF @ 100 V - 139W (Tc) -55°C ~ 150°C (TJ) Through Hole
AUIRFS8409TRL

AUIRFS8409TRL

MOSFET N-CH 40V 195A D2PAK

Infineon Technologies
2,703 -

RFQ

AUIRFS8409TRL

Ficha técnica

Tape & Reel (TR) HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 195A (Tc) 10V 1.2mOhm @ 100A, 10V 3.9V @ 250µA 450 nC @ 10 V ±20V 14240 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFC240NB

IRFC240NB

MOSFET 200V DIE

Infineon Technologies
2,587 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 200 V - - - - - - - - - - Surface Mount
IRFC9024NB

IRFC9024NB

MOSFET 55V 11A DIE

Infineon Technologies
3,723 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 55 V 11A 10V 175mOhm @ 11A, 10V - - - - - - - Surface Mount
IRFC9034NB

IRFC9034NB

MOSFET 55V 19A DIE

Infineon Technologies
2,853 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 55 V 19A 10V 100mOhm @ 19A, 10V - - - - - - - Surface Mount
IRFC120NB

IRFC120NB

MOSFET 100V 9.4A DIE

Infineon Technologies
3,099 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 100 V 9.4A - 210mOhm @ 9.4A, 10V - - - - - - - Surface Mount
IRFC7313B

IRFC7313B

MOSFET 30V DIE

Infineon Technologies
2,933 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 30 V - - - - - - - - - - Surface Mount
IRFC130NB

IRFC130NB

MOSFET 100V 17A DIE

Infineon Technologies
3,367 -

RFQ

Bulk HEXFET® Obsolete - MOSFET (Metal Oxide) 100 V 17A 10V 90mOhm @ 17A, 10V - - - - - - - Surface Mount
Total 8399 Record«Prev1... 364365366367368369370371...420Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario