Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLML2030TRPBF

IRLML2030TRPBF

MOSFET N-CH 30V 2.7A SOT23

Infineon Technologies
3,216 -

RFQ

IRLML2030TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 2.7A (Ta) 4.5V, 10V 100mOhm @ 2.7A, 10V 2.3V @ 25µA 1 nC @ 4.5 V ±20V 110 pF @ 15 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS315PH6327XTSA1

BSS315PH6327XTSA1

MOSFET P-CH 30V 1.5A SOT23-3

Infineon Technologies
4,277 -

RFQ

BSS315PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 4.5V, 10V 150mOhm @ 1.5A, 10V 2V @ 11µA 2.3 nC @ 5 V ±20V 282 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLML9303TRPBF

IRLML9303TRPBF

MOSFET P-CH 30V 2.3A SOT23

Infineon Technologies
12,791 -

RFQ

IRLML9303TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active P-Channel MOSFET (Metal Oxide) 30 V 2.3A (Ta) 4.5V, 10V 165mOhm @ 2.3A, 10V 2.4V @ 10µA 2 nC @ 4.5 V ±20V 160 pF @ 25 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS205NH6327XTSA1

BSS205NH6327XTSA1

MOSFET N-CH 20V 2.5A SOT23-3

Infineon Technologies
20,418 -

RFQ

BSS205NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 2.5V, 4.5V 50mOhm @ 2.5A, 4.5V 1.2V @ 11µA 3.2 nC @ 4.5 V ±12V 419 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
ISS17EP06LMXTSA1

ISS17EP06LMXTSA1

MOSFET P-CH 60V 300MA SOT23-3

Infineon Technologies
74,272 -

RFQ

ISS17EP06LMXTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 300mA (Ta) 4.5V, 10V 1.7Ohm @ 300mA, 10V 2V @ 34µA 1.79 nC @ 10 V ±20V 55 pF @ 30 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS119NH6327XTSA1

BSS119NH6327XTSA1

MOSFET N-CH 100V 190MA SOT23-3

Infineon Technologies
54,174 -

RFQ

BSS119NH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 190mA (Ta) 4.5V, 10V 6Ohm @ 190mA, 10V 2.3V @ 13µA 0.6 nC @ 10 V ±20V 20.9 pF @ 25 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFC4104EB

IRFC4104EB

MOSFET N-CH WAFER

Infineon Technologies
2,616 -

RFQ

IRFC4104EB

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4115ED

IRFC4115ED

MOSFET N-CH WAFER

Infineon Technologies
3,782 -

RFQ

IRFC4115ED

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4127ED

IRFC4127ED

MOSFET N-CH WAFER

Infineon Technologies
3,059 -

RFQ

IRFC4127ED

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
BSS215PH6327XTSA1

BSS215PH6327XTSA1

MOSFET P-CH 20V 1.5A SOT23-3

Infineon Technologies
2,372 -

RFQ

BSS215PH6327XTSA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 150mOhm @ 1.5A, 4.5V 1.2V @ 11µA 3.6 nC @ 4.5 V ±12V 346 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFC4227EB

IRFC4227EB

MOSFET N-CH WAFER

Infineon Technologies
3,949 -

RFQ

IRFC4227EB

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4227ED

IRFC4227ED

MOSFET N-CH WAFER

Infineon Technologies
2,570 -

RFQ

IRFC4227ED

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4332ED

IRFC4332ED

MOSFET N-CH WAFER

Infineon Technologies
3,003 -

RFQ

IRFC4332ED

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4368D

IRFC4368D

MOSFET N-CH WAFER

Infineon Technologies
3,302 -

RFQ

IRFC4368D

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4410ZEB

IRFC4410ZEB

MOSFET N-CH WAFER

Infineon Technologies
3,504 -

RFQ

IRFC4410ZEB

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4468D

IRFC4468D

MOSFET N-CH WAFER

Infineon Technologies
3,612 -

RFQ

IRFC4468D

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4468ED

IRFC4468ED

MOSFET N-CH WAFER

Infineon Technologies
3,551 -

RFQ

IRFC4468ED

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4568EF

IRFC4568EF

MOSFET N-CH WAFER

Infineon Technologies
2,917 -

RFQ

IRFC4568EF

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4668D

IRFC4668D

MOSFET N-CH WAFER

Infineon Technologies
3,932 -

RFQ

IRFC4668D

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
IRFC4668EF

IRFC4668EF

MOSFET N-CH WAFER

Infineon Technologies
2,908 -

RFQ

IRFC4668EF

Ficha técnica

Bulk - Obsolete - - - - - - - - - - - - - -
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1500+ Promedio diario de RFQ
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1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario