Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTQ220N075T

IXTQ220N075T

MOSFET N-CH 75V 220A TO3P

IXYS
3,672 -

RFQ

IXTQ220N075T

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 220A (Tc) 10V 4.5mOhm @ 25A, 10V 4V @ 250µA 165 nC @ 10 V ±20V 7700 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ230N085T

IXTQ230N085T

MOSFET N-CH 85V 230A TO3P

IXYS
2,384 -

RFQ

IXTQ230N085T

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 85 V 230A (Tc) 10V 4.4mOhm @ 50A, 10V 4V @ 250µA 187 nC @ 10 V ±20V 9900 pF @ 25 V - 550W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ240N055T

IXTQ240N055T

MOSFET N-CH 55V 240A TO3P

IXYS
2,902 -

RFQ

IXTQ240N055T

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 240A (Tc) 10V 3.6mOhm @ 25A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 7600 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ250N075T

IXTQ250N075T

MOSFET N-CH 75V 250A TO3P

IXYS
3,358 -

RFQ

IXTQ250N075T

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 75 V 250A (Tc) 10V 4mOhm @ 50A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 9900 pF @ 25 V - 550W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ280N055T

IXTQ280N055T

MOSFET N-CH 55V 280A TO3P

IXYS
2,082 -

RFQ

IXTQ280N055T

Ficha técnica

Tube TrenchMV™ Obsolete N-Channel MOSFET (Metal Oxide) 55 V 280A (Tc) 10V 3.2mOhm @ 50A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 9700 pF @ 25 V - 550W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTQ40N50Q

IXTQ40N50Q

MOSFET N-CH 500V 40A TO3P

IXYS
2,339 -

RFQ

IXTQ40N50Q

Ficha técnica

Box Q Class Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 160mOhm @ 500mA, 10V 4.5V @ 4mA 130 nC @ 10 V ±30V 4500 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTQ62N15P

IXTQ62N15P

MOSFET N-CH 150V 62A TO3P

IXYS
3,449 -

RFQ

IXTQ62N15P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 150 V 62A (Tc) 10V 40mOhm @ 31A, 10V 5.5V @ 250µA 70 nC @ 10 V ±20V 2250 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT10P50

IXTT10P50

MOSFET P-CH 500V 10A TO268

IXYS
2,225 -

RFQ

IXTT10P50

Ficha técnica

Box - Active P-Channel MOSFET (Metal Oxide) 500 V 10A (Tc) 10V 900mOhm @ 5A, 10V 5V @ 250µA 160 nC @ 10 V ±20V 4700 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT16P20

IXTT16P20

MOSFET P-CH 200V 16A TO268

IXYS
2,781 -

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) - - - - - - - - - Surface Mount
IXTT1N100

IXTT1N100

MOSFET N-CH 1000V 1.5A TO268

IXYS
3,231 -

RFQ

IXTT1N100

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1000 V 1.5A (Tc) 10V 11Ohm @ 1A, 10V 4.5V @ 25µA 23 nC @ 10 V ±20V 480 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT20N50D

IXTT20N50D

MOSFET N-CH 500V 20A TO268

IXYS
3,811 -

RFQ

IXTT20N50D

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 330mOhm @ 10A, 10V 3.5V @ 250mA 125 nC @ 10 V ±30V 2500 pF @ 25 V Depletion Mode 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT36P10

IXTT36P10

MOSFET P-CH 100V 36A TO268

IXYS
3,362 -

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) - - - - - - - - - Surface Mount
IXTT50P085

IXTT50P085

MOSFET P-CH 85V 50A TO268

IXYS
3,377 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 85 V 50A (Tc) 10V 55mOhm @ 25A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 4200 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT88N15

IXTT88N15

MOSFET N-CH 150V 88A TO268

IXYS
2,798 -

RFQ

IXTT88N15

Ficha técnica

Box - Active N-Channel MOSFET (Metal Oxide) 150 V 88A (Tc) 10V 22mOhm @ 44A, 10V 4V @ 250µA 170 nC @ 10 V ±20V 4000 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTU01N100D

IXTU01N100D

MOSFET N-CH 1000V 400MA TO251

IXYS
3,862 -

RFQ

IXTU01N100D

Ficha técnica

Tube Depletion Active N-Channel MOSFET (Metal Oxide) 1000 V 400mA (Tc) 0V 80Ohm @ 50mA, 0V 4.5V @ 25µA 5.8 nC @ 5 V ±20V 100 pF @ 25 V Depletion Mode 1.1W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTU01N80

IXTU01N80

MOSFET N-CH 800V 100MA TO251

IXYS
2,913 -

RFQ

IXTU01N80

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 100mA (Tc) 10V 50Ohm @ 100mA, 10V 4.5V @ 25µA 8 nC @ 10 V ±20V 60 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTU05N120

IXTU05N120

MOSFET N-CH 1200V 500MA TO251

IXYS
2,979 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 1200 V 500mA (Tc) - - - - - - - - - Through Hole
IXTU06N120P

IXTU06N120P

MOSFET N-CH 1200V 600MA TO251

IXYS
2,157 -

RFQ

Tube Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 600mA (Tc) - - - - - - - - - Through Hole
IXTU1R4N60P

IXTU1R4N60P

MOSFET N-CH 600V 1.4A TO251

IXYS
3,848 -

RFQ

IXTU1R4N60P

Ficha técnica

Tube PolarHV™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 1.4A (Tc) 10V 9Ohm @ 700mA, 10V 5.5V @ 25µA 5.2 nC @ 10 V ±30V 140 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTU44N10T

IXTU44N10T

MOSFET N-CH 100V 44A TO251

IXYS
2,767 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 44A (Tc) - - 4.5V @ 25µA - - - - - - Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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