Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXKT70N60C5-TRL

IXKT70N60C5-TRL

MOSFET P-CH 600V 68A TO-268

IXYS
3,098 -

RFQ

Tape & Reel (TR) * Active - - - - - - - - - - - - - -
IXTR32P60P

IXTR32P60P

MOSFET P-CH 600V 18A ISOPLUS247

IXYS
3,060 -

RFQ

IXTR32P60P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 18A (Tc) 10V 385mOhm @ 16A, 10V 4V @ 1mA 196 nC @ 10 V ±20V 11100 pF @ 25 V - 310W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTR40P50P

IXTR40P50P

MOSFET P-CH 500V 22A ISOPLUS247

IXYS
2,004 -

RFQ

IXTR40P50P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 22A (Tc) 10V 260mOhm @ 20A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 11500 pF @ 25 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTR90P20P

IXTR90P20P

MOSFET P-CH 200V 53A ISOPLUS247

IXYS
2,842 -

RFQ

IXTR90P20P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 200 V 53A (Tc) 10V 48mOhm @ 45A, 10V 4V @ 1mA 205 nC @ 10 V ±20V 12000 pF @ 25 V - 312W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK50N50

IXFK50N50

MOSFET N-CH 500V 50A TO-264AA

IXYS
2,196 -

RFQ

IXFK50N50

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 500 V 50A (Tc) 10V 80mOhm @ 25A, 10V 4.5V @ 8mA 330 nC @ 10 V ±20V 9400 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT44N50Q3

IXFT44N50Q3

MOSFET N-CH 500V 44A TO268

IXYS
3,693 -

RFQ

IXFT44N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 44A (Tc) 10V 140mOhm @ 22A, 10V 6.5V @ 4mA 93 nC @ 10 V ±30V 4800 pF @ 25 V - 830W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFX34N80

IXFX34N80

MOSFET N-CH 800V 34A PLUS247

IXYS
2,404 -

RFQ

IXFX34N80

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 800 V 34A (Tc) 10V 240mOhm @ 17A, 10V 5V @ 8mA 270 nC @ 10 V ±20V 7500 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX600N04T2

IXTX600N04T2

MOSFET N-CH 40V 600A PLUS247-3

IXYS
2,442 -

RFQ

IXTX600N04T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 600A (Tc) 10V 1.5mOhm @ 100A, 10V 3.5V @ 250µA 590 nC @ 10 V ±20V 40000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFR16N120P

IXFR16N120P

MOSFET N-CH 1200V 9A ISOPLUS247

IXYS
2,016 -

RFQ

IXFR16N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 9A (Tc) 10V 1.04Ohm @ 8A, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V - 230W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTX550N055T2

IXTX550N055T2

MOSFET N-CH 55V 550A PLUS247-3

IXYS
2,756 -

RFQ

IXTX550N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1.6mOhm @ 100A, 10V 4V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTT140N075L2HV-TR

IXTT140N075L2HV-TR

DISC MOSFET N-CH LINEAR L2 TO-26

IXYS
2,733 -

RFQ

Tape & Reel (TR) LinearL2™ Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 11mOhm @ 70A, 10V 4.5V @ 250µA 275 nC @ 10 V ±20V 9300 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTK550N055T2

IXTK550N055T2

MOSFET N-CH 55V 550A TO264

IXYS
2,359 -

RFQ

IXTK550N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1.6mOhm @ 100A, 10V 4V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTK600N04T2

IXTK600N04T2

MOSFET N-CH 40V 600A TO264

IXYS
2,260 -

RFQ

IXTK600N04T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 40 V 600A (Tc) 10V 1.5mOhm @ 100A, 10V 3.5V @ 250µA 590 nC @ 10 V ±20V 40000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFK420N10T

IXFK420N10T

MOSFET N-CH 100V 420A TO264AA

IXYS
2,128 -

RFQ

IXFK420N10T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 100 V 420A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 47000 pF @ 25 V - 1670W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX170N20P

IXFX170N20P

MOSFET N-CH 200V 170A PLUS247-3

IXYS
2,223 -

RFQ

IXFX170N20P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 170A (Tc) 10V 14mOhm @ 500mA, 10V 5V @ 1mA 185 nC @ 10 V ±20V 11400 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX250N10P

IXFX250N10P

MOSFET N-CH 100V 250A PLUS247-3

IXYS
2,333 -

RFQ

IXFX250N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 250A (Tc) 10V 6.5mOhm @ 50A, 10V 5V @ 1mA 205 nC @ 10 V ±20V 16000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT320N10T2

IXFT320N10T2

MOSFET N-CH 100V 320A TO268

IXYS
2,996 -

RFQ

IXFT320N10T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 320A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 250µA 430 nC @ 10 V ±20V 26000 pF @ 25 V - 1000W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTT60N20L2

IXTT60N20L2

MOSFET N-CH 200V 60A TO268

IXYS
3,000 -

RFQ

IXTT60N20L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 250µA 255 nC @ 10 V ±20V 10500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT110N10L2

IXTT110N10L2

MOSFET N-CH 100V 110A TO268

IXYS
3,992 -

RFQ

IXTT110N10L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 110A (Tc) 10V 18mOhm @ 55A, 10V 4.5V @ 250µA 260 nC @ 10 V ±20V 10500 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFK24N100

IXFK24N100

MOSFET N-CH 1KV 24A TO-264AA

IXYS
3,984 -

RFQ

IXFK24N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 24A (Tc) 10V 390mOhm @ 12A, 10V 5.5V @ 8mA 267 nC @ 10 V ±20V 8700 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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