Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTT40N50L2-TRL

IXTT40N50L2-TRL

MOSFET N-CH 500V 40A TO268

IXYS
3,623 -

RFQ

Tape & Reel (TR) Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 40A (Tc) 10V 170mOhm @ 20A, 10V 4.5V @ 250µA 320 nC @ 10 V ±20V 10400 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFH170N15X3

IXFH170N15X3

MOSFET N-CH 150V 170A TO247

IXYS
3,367 -

RFQ

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 150 V 170A (Tc) 10V 6.7mOhm @ 85A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7620 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR32N80P

IXFR32N80P

MOSFET N-CH 800V 20A ISOPLUS247

IXYS
3,183 -

RFQ

IXFR32N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 20A (Tc) 10V 290mOhm @ 16A, 10V 5V @ 8mA 150 nC @ 10 V ±30V 8800 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT16N120P-TRL

IXFT16N120P-TRL

MOSFET N-CH 1200V 16A TO268

IXYS
3,530 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 16A (Tc) 10V 950mOhm @ 8A, 10V 6.5V @ 1mA 120 nC @ 10 V ±30V 6900 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTR200N10P

IXTR200N10P

MOSFET N-CH 100V 120A ISOPLUS247

IXYS
2,202 -

RFQ

IXTR200N10P

Ficha técnica

Tube Polar Active N-Channel MOSFET (Metal Oxide) 100 V 120A (Tc) 10V 8mOhm @ 60A, 10V 5V @ 500µA 235 nC @ 10 V ±20V 7600 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX120N20

IXFX120N20

MOSFET N-CH 200V 120A PLUS247

IXYS
2,185 -

RFQ

IXFX120N20

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 200 V 120A (Tc) 10V 17mOhm @ 60A, 10V 4V @ 8mA 300 nC @ 10 V ±20V 9100 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX180N10

IXFX180N10

MOSFET N-CH 100V 180A PLUS247

IXYS
2,460 -

RFQ

IXFX180N10

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 180A (Tc) 10V 8mOhm @ 90A, 10V 4V @ 8mA 390 nC @ 10 V ±20V 10900 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX150N15

IXFX150N15

MOSFET N-CH 150V 150A PLUS247

IXYS
3,744 -

RFQ

IXFX150N15

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 150 V 150A (Tc) 10V 12.5mOhm @ 75A, 10V 4V @ 8mA 360 nC @ 10 V ±20V 9100 pF @ 25 V - 560W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR24N90P

IXFR24N90P

MOSFET N-CH 900V 13A ISOPLUS247

IXYS
3,480 -

RFQ

IXFR24N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 13A (Tc) 10V 460mOhm @ 12A, 10V 6.5V @ 1mA 130 nC @ 10 V ±30V 7200 pF @ 25 V - 230W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR102N30P

IXFR102N30P

MOSFET N-CH 300V 60A ISOPLUS247

IXYS
2,420 -

RFQ

IXFR102N30P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 60A (Tc) 10V 36mOhm @ 51A, 10V 5V @ 4mA 224 nC @ 10 V ±20V 7500 pF @ 25 V - 250W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR180N15P

IXFR180N15P

MOSFET N-CH 150V 100A ISOPLUS247

IXYS
3,985 -

RFQ

IXFR180N15P

Ficha técnica

Box HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 100A (Tc) 10V 13mOhm @ 90A, 10V 5V @ 4mA 240 nC @ 10 V ±20V 7000 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX32N90P

IXFX32N90P

MOSFET N-CH 900V 32A PLUS247-3

IXYS
3,353 -

RFQ

IXFX32N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 32A (Tc) 10V 300mOhm @ 16A, 10V 6.5V @ 1mA 215 nC @ 10 V ±30V 10600 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH12N120P

IXFH12N120P

MOSFET N-CH 1200V 12A TO247AD

IXYS
2,781 -

RFQ

IXFH12N120P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 1200 V 12A (Tc) 10V 1.35Ohm @ 500mA, 10V 6.5V @ 1mA 103 nC @ 10 V ±30V 5400 pF @ 25 V - 543W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ170N15X3

IXFQ170N15X3

DISCMSFT NCHULTRJNCTN X3CLASS TO

IXYS
3,497 -

RFQ

Tube HiPerFET™ Active N-Channel MOSFET (Metal Oxide) 150 V 170A (Tc) 10V 6.7mOhm @ 85A, 10V 4.5V @ 4mA 122 nC @ 10 V ±20V 7620 pF @ 25 V - 520W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR80N60P3

IXFR80N60P3

MOSFET N-CH 600V 48A ISOPLUS247

IXYS
3,887 -

RFQ

IXFR80N60P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 600 V 48A (Tc) 10V 76mOhm @ 40A, 10V 5V @ 8mA 190 nC @ 10 V ±30V 13100 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTT75N10L2

IXTT75N10L2

MOSFET N-CH 100V 75A TO268

IXYS
3,131 -

RFQ

IXTT75N10L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 100 V 75A (Tc) 10V 21mOhm @ 500mA, 10V 4.5V @ 250µA 215 nC @ 10 V ±20V 8100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTT30N50L2

IXTT30N50L2

MOSFET N-CH 500V 30A TO268

IXYS
2,228 -

RFQ

IXTT30N50L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 4.5V @ 250µA 240 nC @ 10 V ±20V 8100 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FMD21-05QC

FMD21-05QC

MOSFET N-CH 500V 21A I4PAC

IXYS
3,480 -

RFQ

FMD21-05QC

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 21A (Tc) 10V 220mOhm @ 15A, 10V 4.5V @ 250µA 95 nC @ 10 V ±20V - - - -55°C ~ 150°C (TJ) Through Hole
IXTH140N075L2

IXTH140N075L2

MOSFET N-CH 75V 140A TO247

IXYS
2,717 -

RFQ

IXTH140N075L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 75 V 140A (Tc) 10V 11mOhm @ 70A, 10V 4.5V @ 250µA 275 nC @ 10 V ±20V 9300 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR180N10

IXFR180N10

MOSFET N-CH 100V 165A ISOPLUS247

IXYS
3,144 -

RFQ

IXFR180N10

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 165A (Tc) 10V 8mOhm @ 90A, 10V 4V @ 8mA 400 nC @ 10 V ±20V 9400 pF @ 25 V - 400W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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