Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTR16P60P

IXTR16P60P

MOSFET P-CH 600V 10A ISOPLUS247

IXYS
3,656 -

RFQ

IXTR16P60P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 600 V 10A (Tc) 10V 790mOhm @ 8A, 10V 4.5V @ 250µA 92 nC @ 10 V ±20V 5120 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTR20P50P

IXTR20P50P

MOSFET P-CH 500V 13A ISOPLUS247

IXYS
2,229 -

RFQ

IXTR20P50P

Ficha técnica

Tube PolarP™ Active P-Channel MOSFET (Metal Oxide) 500 V 13A (Tc) 10V 490mOhm @ 10A, 10V 4.5V @ 250µA 103 nC @ 10 V ±20V 5120 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX220N17T2

IXFX220N17T2

MOSFET N-CH 170V 220A PLUS247-3

IXYS
2,175 -

RFQ

IXFX220N17T2

Ficha técnica

Tube HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 170 V 220A (Tc) 10V 6.3mOhm @ 60A, 10V 5V @ 8mA 500 nC @ 10 V ±20V 31000 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFT60N65X2HV

IXFT60N65X2HV

MOSFET N-CH 650V 60A TO268HV

IXYS
2,217 -

RFQ

IXFT60N65X2HV

Ficha técnica

Tube HiPerFET™, Ultra X2 Active N-Channel MOSFET (Metal Oxide) 650 V 60A (Tc) 10V 52mOhm @ 30A, 10V 5V @ 4mA 108 nC @ 10 V ±30V 6300 pF @ 25 V - 780W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFT24N90P-TRL

IXFT24N90P-TRL

MOSFET N-CH 900V 24A TO268

IXYS
3,557 -

RFQ

Tape & Reel (TR) HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 24A (Tc) 10V 420mOhm @ 12A, 10V 6.5V @ 1mA 130 nC @ 10 V ±30V 7200 pF @ 25 V - 660W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXFR36N50P

IXFR36N50P

MOSFET N-CH 500V 19A ISOPLUS247

IXYS
3,980 -

RFQ

IXFR36N50P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 500 V 19A (Tc) 10V 190mOhm @ 18A, 10V 5V @ 4mA 93 nC @ 10 V ±30V 5500 pF @ 25 V - 156W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH120N25T

IXFH120N25T

MOSFET N-CH 250V 120A TO247AD

IXYS
2,508 -

RFQ

IXFH120N25T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 120A (Tc) 10V 23mOhm @ 60A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 11300 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH94N30T

IXFH94N30T

MOSFET N-CH 300V 94A TO247AD

IXYS
3,870 -

RFQ

IXFH94N30T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 94A (Tc) 10V 36mOhm @ 47A, 10V 5V @ 4mA 190 nC @ 10 V ±20V 11400 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR18N90P

IXFR18N90P

MOSFET N-CH 900V 10.5A ISOPLS247

IXYS
3,165 -

RFQ

IXFR18N90P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 900 V 10.5A (Tc) 10V 660mOhm @ 9A, 10V 6V @ 1mA 97 nC @ 10 V ±30V 5230 pF @ 25 V - 200W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFT88N30P

IXFT88N30P

MOSFET N-CH 300V 88A TO268

IXYS
2,174 -

RFQ

IXFT88N30P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 300 V 88A (Tc) 10V 40mOhm @ 44A, 10V 5V @ 4mA 180 nC @ 10 V ±20V 6300 pF @ 25 V - 600W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IXTH64N65X

IXTH64N65X

MOSFET N-CH 650V 64A TO247

IXYS
3,378 -

RFQ

IXTH64N65X

Ficha técnica

Tube Ultra X Active N-Channel MOSFET (Metal Oxide) 650 V 64A (Tc) 10V 51mOhm @ 32A, 10V 5V @ 250µA 143 nC @ 10 V ±30V 5500 pF @ 25 V - 890W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFQ94N30P3

IXFQ94N30P3

MOSFET N-CH 300V 94A TO3P

IXYS
2,369 -

RFQ

IXFQ94N30P3

Ficha técnica

Tube HiPerFET™, Polar3™ Active N-Channel MOSFET (Metal Oxide) 300 V 94A (Tc) 10V 36mOhm @ 47A, 10V 5V @ 4mA 102 nC @ 10 V ±20V 5510 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH10N100

IXFH10N100

MOSFET N-CH 1KV 10A TO-247AD

IXYS
3,708 -

RFQ

IXFH10N100

Ficha técnica

Tube HiPerFET™ Not For New Designs N-Channel MOSFET (Metal Oxide) 1000 V 10A (Tc) 10V 1.2Ohm @ 5A, 10V 4.5V @ 4mA 155 nC @ 10 V ±20V 4000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX170N20T

IXFX170N20T

MOSFET N-CH 200V 170A PLUS247-3

IXYS
3,434 -

RFQ

IXFX170N20T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 200 V 170A (Tc) 10V 11mOhm @ 60A, 10V 5V @ 4mA 265 nC @ 10 V ±20V 19600 pF @ 25 V - 1150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFX140N25T

IXFX140N25T

MOSFET N-CH 250V 140A PLUS247-3

IXYS
2,045 -

RFQ

IXFX140N25T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 250 V 140A (Tc) 10V 17mOhm @ 60A, 10V 5V @ 4mA 255 nC @ 10 V ±20V 19000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFX120N30T

IXFX120N30T

MOSFET N-CH 300V 120A PLUS247-3

IXYS
3,923 -

RFQ

IXFX120N30T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5V @ 4mA 265 nC @ 10 V ±20V 20000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFJ80N25X3

IXFJ80N25X3

MOSFET N-CH 250V 44A ISO TO247-3

IXYS
3,153 -

RFQ

IXFJ80N25X3

Ficha técnica

Tube HiPerFET™, Ultra X3 Active N-Channel MOSFET (Metal Oxide) 250 V 44A (Tc) 10V 18mOhm @ 40A, 10V 4.5V @ 1.5mA 83 nC @ 10 V ±20V 5430 pF @ 25 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTJ6N150

IXTJ6N150

MOSFET N-CH 1500V 3A TO247

IXYS
3,639 -

RFQ

IXTJ6N150

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 1500 V 3A (Tc) 10V 3.85Ohm @ 3A, 10V 5V @ 250µA 67 nC @ 10 V ±30V 2230 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFK120N30T

IXFK120N30T

MOSFET N-CH 300V 120A TO264AA

IXYS
3,943 -

RFQ

IXFK120N30T

Ficha técnica

Tube HiPerFET™, Trench Active N-Channel MOSFET (Metal Oxide) 300 V 120A (Tc) 10V 24mOhm @ 60A, 10V 5V @ 4mA 265 nC @ 10 V ±20V 20000 pF @ 25 V - 960W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFH30N50Q3

IXFH30N50Q3

MOSFET N-CH 500V 30A TO247AD

IXYS
3,152 -

RFQ

IXFH30N50Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 500 V 30A (Tc) 10V 200mOhm @ 15A, 10V 6.5V @ 4mA 62 nC @ 10 V ±20V 3200 pF @ 25 V - 690W (Tc) -55°C ~ 150°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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