Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
STL9P3LLH6

STL9P3LLH6

MOSFET P-CH 30V 9A POWERFLAT

STMicroelectronics
2,685 -

RFQ

STL9P3LLH6

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ H6 Active P-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 15mOhm @ 4.5A, 10V 1V @ 250µA 24 nC @ 4.5 V ±20V 2615 pF @ 25 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
ZVP4424GTA

ZVP4424GTA

MOSFET P-CH 240V 480MA SOT223

Diodes Incorporated
3,180 -

RFQ

ZVP4424GTA

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 240 V 480mA (Ta) 3.5V, 10V 9Ohm @ 200mA, 10V 2V @ 1mA - ±40V 200 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR2905ZTRPBF

IRLR2905ZTRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
3,842 -

RFQ

IRLR2905ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 4.5V, 10V 13.5mOhm @ 36A, 10V 3V @ 250µA 35 nC @ 5 V ±16V 1570 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BUK6Y33-60PX

BUK6Y33-60PX

MOSFET P-CH 60V 30A LFPAK56

Nexperia USA Inc.
3,672 -

RFQ

BUK6Y33-60PX

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Ta) 4.5V, 10V 33mOhm @ 7A, 10V 3V @ 250µA 69 nC @ 10 V ±20V 2590 pF @ 30 V - 110W (Ta) -55°C ~ 175°C (TJ) Surface Mount
DN3135K1-G

DN3135K1-G

MOSFET N-CH 350V 72MA SOT23-3

Microchip Technology
2,835 -

RFQ

DN3135K1-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 350 V 72mA (Tj) 0V 35Ohm @ 150mA, 0V - - ±20V 120 pF @ 25 V Depletion Mode 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PSMN2R8-25MLC,115

PSMN2R8-25MLC,115

MOSFET N-CH 25V 70A LFPAK33

Nexperia USA Inc.
3,156 -

RFQ

PSMN2R8-25MLC,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 25 V 70A (Tc) 4.5V, 10V 2.8mOhm @ 25A, 10V 2.15V @ 1mA 37.7 nC @ 10 V ±20V 2432 pF @ 12.5 V - 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFD16N05SM9A

RFD16N05SM9A

MOSFET N-CH 50V 16A TO252AA

onsemi
3,277 -

RFQ

RFD16N05SM9A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 50 V 16A (Tc) 10V 47mOhm @ 16A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 900 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0902NSATMA1

BSZ0902NSATMA1

MOSFET N-CH 30V 19A/40A TSDSON

Infineon Technologies
2,915 -

RFQ

BSZ0902NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 19A (Ta), 40A (Tc) 4.5V, 10V 2.6mOhm @ 20A, 10V 2V @ 250µA 26 nC @ 10 V ±20V 1700 pF @ 15 V - 2.1W (Ta), 48W (Tc) -55°C ~ 150°C (TJ) Surface Mount
STD5N20LT4

STD5N20LT4

MOSFET N-CH 200V 5A DPAK

STMicroelectronics
2,258 -

RFQ

STD5N20LT4

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) STripFET™ Active N-Channel MOSFET (Metal Oxide) 200 V 5A (Tc) 5V 700mOhm @ 2.5A, 5V 2.5V @ 50µA 6 nC @ 5 V ±20V 242 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SUD19P06-60-GE3

SUD19P06-60-GE3

MOSFET P-CH 60V 18.3A TO252

Vishay Siliconix
2,743 -

RFQ

SUD19P06-60-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 18.3A (Tc) 4.5V, 10V 60mOhm @ 10A, 10V 3V @ 250µA 40 nC @ 10 V ±20V 1710 pF @ 25 V - 2.3W (Ta), 38.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS2582

FDS2582

MOSFET N-CH 150V 4.1A 8SOIC

onsemi
2,972 -

RFQ

FDS2582

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 150 V 4.1A (Ta) 6V, 10V 66mOhm @ 4.1A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 1290 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS86106

FDS86106

MOSFET N-CH 100V 3.4A 8SOIC

onsemi
2,629 -

RFQ

FDS86106

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 3.4A (Ta) 6V, 10V 105mOhm @ 3.4A, 10V 4V @ 250µA 4 nC @ 10 V ±20V 208 pF @ 50 V - 5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMT10H010LK3-13

DMT10H010LK3-13

MOSFET N-CH 100V 68.8A TO252

Diodes Incorporated
2,231 -

RFQ

DMT10H010LK3-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 100 V 68.8A (Tc) 6V, 10V 8.8mOhm @ 13A, 10V 3V @ 250µA 53.7 nC @ 10 V ±20V 2592 pF @ 50 V - 3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC0504NSIATMA1

BSC0504NSIATMA1

MOSFET N-CH 30V 21A/72A TDSON

Infineon Technologies
3,269 -

RFQ

BSC0504NSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 21A (Ta), 72A (Tc) 4.5V, 10V 3.7mOhm @ 30A, 10V 2V @ 250µA 15 nC @ 10 V ±20V 960 pF @ 15 V - 2.5W (Ta), 30W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSO613SPVGXUMA1

BSO613SPVGXUMA1

MOSFET N/P-CH 8-SOIC

Infineon Technologies
3,651 -

RFQ

BSO613SPVGXUMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, SIPMOS® Active P-Channel MOSFET (Metal Oxide) 60 V 3.44A (Ta) 10V 130mOhm @ 3.44A, 10V 4V @ 1mA 30 nC @ 10 V ±20V 875 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IAUC100N04S6L020ATMA1

IAUC100N04S6L020ATMA1

IAUC100N04S6L020ATMA1

Infineon Technologies
2,446 -

RFQ

IAUC100N04S6L020ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 4.5V, 10V 2.04mOhm @ 50A, 10V 2V @ 32µA 46 nC @ 10 V ±16V 2744 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SIR624DP-T1-GE3

SIR624DP-T1-GE3

MOSFET N-CH 200V 18.6A PPAK SO-8

Vishay Siliconix
3,280 -

RFQ

SIR624DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) ThunderFET® Active N-Channel MOSFET (Metal Oxide) 200 V 18.6A (Tc) 7.5V, 10V 60mOhm @ 10A, 10V 4V @ 250µA 23 nC @ 7.5 V ±20V 1110 pF @ 100 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI7172ADP-T1-RE3

SI7172ADP-T1-RE3

MOSFET N-CH 200V PPAK SO-8

Vishay Siliconix
3,059 -

RFQ

SI7172ADP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 200 V 5.3A (Ta), 17.2A (Tc) 7.5V, 10V 50mOhm @ 10A, 10V 3.1V @ 250µA 19.5 nC @ 10 V - 1110 pF @ 100 V - - -55°C ~ 125°C Surface Mount
IRL3715ZCSPBF

IRL3715ZCSPBF

MOSFET N-CH 20V 50A D2PAK

Infineon Technologies
3,047 -

RFQ

IRL3715ZCSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3714ZLPBF

IRL3714ZLPBF

MOSFET N-CH 20V 36A TO262

Infineon Technologies
2,770 -

RFQ

IRL3714ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Record«Prev1... 256257258259260261262263...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario