Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IAUZ40N10S5N130ATMA1

IAUZ40N10S5N130ATMA1

MOSFET N-CH 100V 40A 8TSDSON-33

Infineon Technologies
3,437 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 100 V 40A (Tc) 6V, 10V 13mOhm @ 20A, 10V 3.8V @ 27µA 24 nC @ 10 V ±20V 1525 pF @ 50 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMS4435BZ

FDMS4435BZ

MOSFET P-CH 30V 9A/18A 8PQFN

onsemi
2,650 -

RFQ

FDMS4435BZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 9A (Ta), 18A (Tc) 4.5V, 10V 20mOhm @ 9A, 10V 3V @ 250µA 47 nC @ 10 V ±25V 2050 pF @ 15 V - 2.5W (Ta), 39W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC100N06LS3GATMA1

BSC100N06LS3GATMA1

MOSFET N-CH 60V 12A/50A TDSON

Infineon Technologies
3,406 -

RFQ

BSC100N06LS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 12A (Ta), 50A (Tc) 4.5V, 10V 10mOhm @ 50A, 10V 2.2V @ 23µA 45 nC @ 10 V ±20V 3500 pF @ 30 V - 2.5W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
XPN6R706NC,L1XHQ

XPN6R706NC,L1XHQ

MOSFET N-CH 60V 40A 8TSON

Toshiba Semiconductor and Storage
2,715 -

RFQ

XPN6R706NC,L1XHQ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVIII-H Active N-Channel MOSFET (Metal Oxide) 60 V 40A (Ta) 4.5V, 10V 6.7mOhm @ 20A, 10V 2.5V @ 300µA 35 nC @ 10 V ±20V 2000 pF @ 10 V - 840mW (Ta), 100W (Tc) 175°C Surface Mount
SIRA90DP-T1-RE3

SIRA90DP-T1-RE3

MOSFET N-CH 30V 100A PPAK SO-8

Vishay Siliconix
3,360 -

RFQ

SIRA90DP-T1-RE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 100A (Tc) 4.5V, 10V 0.8mOhm @ 20A, 10V 2V @ 250µA 153 nC @ 10 V +20V, -16V 10180 pF @ 15 V - 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CSD25484F4T

CSD25484F4T

MOSFET P-CH 20V 2.5A 3PICOSTAR

Texas Instruments
3,306 -

RFQ

CSD25484F4T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) FemtoFET™ Active P-Channel MOSFET (Metal Oxide) 20 V 2.5A (Ta) 1.8V, 8V 94mOhm @ 500mA, 8V 1.2V @ 250µA 1.42 nC @ 4.5 V -12V 230 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP4015SSSQ-13

DMP4015SSSQ-13

MOSFET P-CH 40V 9.1A 8SO

Diodes Incorporated
2,654 -

RFQ

DMP4015SSSQ-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 9.1A (Ta) 4.5V, 10V 11mOhm @ 9.8A, 10V 2.5V @ 250µA 47.5 nC @ 5 V ±25V 4234 pF @ 20 V - 1.45W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI7465DP-T1-GE3

SI7465DP-T1-GE3

MOSFET P-CH 60V 3.2A PPAK SO-8

Vishay Siliconix
3,189 -

RFQ

SI7465DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 3.2A (Ta) 4.5V, 10V 64mOhm @ 5A, 10V 3V @ 250µA 40 nC @ 10 V ±20V - - 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SIS468DN-T1-GE3

SIS468DN-T1-GE3

MOSFET N-CH 80V 30A PPAK1212-8

Vishay Siliconix
3,985 -

RFQ

SIS468DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 30A (Tc) 4.5V, 10V 19.5mOhm @ 10A, 10V 3V @ 250µA 28 nC @ 10 V ±20V 780 pF @ 40 V - 3.7W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI4100DY-T1-E3

SI4100DY-T1-E3

MOSFET N-CH 100V 6.8A 8SO

Vishay Siliconix
2,356 -

RFQ

SI4100DY-T1-E3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 6V, 10V 63mOhm @ 4.4A, 10V 4.5V @ 250µA 20 nC @ 10 V ±20V 600 pF @ 50 V - 2.5W (Ta), 6W (Tc) -55°C ~ 150°C (TJ) Surface Mount
LND150N8-G

LND150N8-G

MOSFET N-CH 500V 30MA SOT89-3

Microchip Technology
3,826 -

RFQ

LND150N8-G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 500 V 30mA (Tj) 0V 1000Ohm @ 500µA, 0V - - ±20V 10 pF @ 25 V Depletion Mode 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSC094N06LS5ATMA1

BSC094N06LS5ATMA1

MOSFET N-CHANNEL 60V 47A 8TDSON

Infineon Technologies
2,062 -

RFQ

BSC094N06LS5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 47A (Tc) 4.5V, 10V 9.4mOhm @ 24A, 10V 2.3V @ 14µA 9.4 nC @ 4.5 V ±20V 1300 pF @ 30 V - 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDS6575

FDS6575

MOSFET P-CH 20V 10A 8SOIC

onsemi
589 -

RFQ

FDS6575

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 10A (Ta) 2.5V, 4.5V 13mOhm @ 10A, 4.5V 1.5V @ 250µA 74 nC @ 4.5 V ±8V 4951 pF @ 10 V - 2.5W (Ta) -55°C ~ 175°C (TJ) Surface Mount
BSC22DN20NS3GATMA1

BSC22DN20NS3GATMA1

MOSFET N-CH 200V 7A TDSON-8-5

Infineon Technologies
2,834 -

RFQ

BSC22DN20NS3GATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 225mOhm @ 3.5A, 10V 4V @ 13µA 5.6 nC @ 10 V ±20V 430 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC265N10LSFGATMA1

BSC265N10LSFGATMA1

MOSFET N-CH 100V 6.5A/40A TDSON

Infineon Technologies
3,982 -

RFQ

BSC265N10LSFGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 6.5A (Ta), 40A (Tc) 4.5V, 10V 26.5mOhm @ 20A, 10V 2.4V @ 43µA 21 nC @ 10 V ±20V 1600 pF @ 50 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SQJA80EP-T1_GE3

SQJA80EP-T1_GE3

MOSFET N-CH 80V 60A PPAK SO-8

Vishay Siliconix
3,408 -

RFQ

SQJA80EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 60A (Tc) 4.5V, 10V 7mOhm @ 10A, 10V 2.5V @ 250µA 75 nC @ 10 V ±20V 3800 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB17N60KPBF

IRFB17N60KPBF

MOSFET N-CH 600V 17A TO220AB

Vishay Siliconix
2,716 -

RFQ

IRFB17N60KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 17A (Tc) 10V 420mOhm @ 10A, 10V 5V @ 250µA 99 nC @ 10 V ±30V 2700 pF @ 25 V - 340W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBA1405PPBF

IRFBA1405PPBF

MOSFET N-CH 55V 174A SUPER-220

Infineon Technologies
3,118 -

RFQ

IRFBA1405PPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 174A (Tc) 10V 5mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRFBA22N50APBF

IRFBA22N50APBF

MOSFET N-CH 500V 24A SUPER-220

Vishay Siliconix
3,444 -

RFQ

IRFBA22N50APBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 24A (Tc) 10V 230mOhm @ 13.8A, 10V 4V @ 250µA 115 nC @ 10 V ±30V 3400 pF @ 25 V - 340W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3803LPBF

IRL3803LPBF

MOSFET N-CH 30V 140A TO262

Infineon Technologies
3,863 -

RFQ

IRL3803LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 42446 Record«Prev1... 259260261262263264265266...2123Next»
1500+
1500+ Promedio diario de RFQ
20,000.000
20,000.000 Unidad estándar de producto
1800+
1800+ Fabricantes en todo el mundo
15,000+
15,000+ Almacén en inventario
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Inicio

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Producto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Teléfono

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuario