Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3711ZLPBF

IRF3711ZLPBF

MOSFET N-CH 20V 92A TO262

Infineon Technologies
2,708 -

RFQ

IRF3711ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ48ZLPBF

IRFZ48ZLPBF

MOSFET N-CH 55V 61A TO262

Infineon Technologies
3,231 -

RFQ

IRFZ48ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFIZ24EPBF

IRFIZ24EPBF

MOSFET N-CH 60V 14A TO220AB FP

Infineon Technologies
2,029 -

RFQ

IRFIZ24EPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 71mOhm @ 7.8A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 29W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3704LPBF

IRF3704LPBF

MOSFET N-CH 20V 77A TO262

Infineon Technologies
2,454 -

RFQ

IRF3704LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF734PBF

IRF734PBF

MOSFET N-CH 450V 4.9A TO220AB

Vishay Siliconix
2,184 -

RFQ

IRF734PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 4.9A (Tc) 10V 1.2Ohm @ 2.9A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 680 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3716PBF

IRL3716PBF

MOSFET N-CH 20V 180A TO220AB

Infineon Technologies
3,558 -

RFQ

IRL3716PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 180A (Tc) 4.5V, 10V 4mOhm @ 90A, 10V 3V @ 250µA 79 nC @ 4.5 V ±20V 5090 pF @ 10 V - 210W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010EZLPBF

IRF1010EZLPBF

MOSFET N-CH 60V 75A TO262

Infineon Technologies
3,238 -

RFQ

IRF1010EZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3402SPBF

IRL3402SPBF

MOSFET N-CH 20V 85A D2PAK

Infineon Technologies
3,516 -

RFQ

IRL3402SPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 85A (Tc) 4.5V, 7V 8mOhm @ 51A, 7V 700mV @ 250µA (Min) 78 nC @ 4.5 V ±10V 3300 pF @ 15 V - 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC20LPBF

IRFBC20LPBF

MOSFET N-CH 600V 2.2A TO262-3

Vishay Siliconix
3,866 -

RFQ

IRFBC20LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC634PBF

IRC634PBF

MOSFET N-CH 250V 8.1A TO220-5

Vishay Siliconix
2,783 -

RFQ

IRC634PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 4.9A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V Current Sensing 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF640LPBF

IRF640LPBF

MOSFET N-CH 200V 18A TO262-3

Vishay Siliconix
2,317 -

RFQ

IRF640LPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRC730PBF

IRC730PBF

MOSFET N-CH 400V 5.5A TO220-5

Vishay Siliconix
3,236 -

RFQ

IRC730PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V Current Sensing 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3303LPBF

IRL3303LPBF

MOSFET N-CH 30V 38A TO262

Infineon Technologies
3,229 -

RFQ

IRL3303LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 38A (Tc) 4.5V, 10V 26mOhm @ 20A, 10V 1V @ 250µA 26 nC @ 4.5 V ±16V 870 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF4104LPBF

IRF4104LPBF

MOSFET N-CH 40V 75A TO262

Infineon Technologies
2,435 -

RFQ

IRF4104LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRC830PBF

IRC830PBF

MOSFET N-CH 500V 4.5A TO220-5

Vishay Siliconix
2,488 -

RFQ

IRC830PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V Current Sensing 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI744GPBF

IRFI744GPBF

MOSFET N-CH 450V 4.9A TO220-3

Vishay Siliconix
3,135 -

RFQ

IRFI744GPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 4.9A (Tc) 10V 630mOhm @ 2.9A, 10V 4V @ 250µA 80 nC @ 10 V ±20V 1400 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL17N20DPBF

IRFSL17N20DPBF

MOSFET N-CH 200V 16A TO262

Infineon Technologies
2,213 -

RFQ

IRFSL17N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 16A (Tc) 10V 170mOhm @ 9.8A, 10V 5.5V @ 250µA 50 nC @ 10 V ±30V 1100 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI734GPBF

IRFI734GPBF

MOSFET N-CH 450V 3.4A TO220-3

Vishay Siliconix
3,660 -

RFQ

IRFI734GPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 3.4A (Tc) 10V 1.2Ohm @ 2A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 680 pF @ 25 V - 35W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFSL23N15DPBF

IRFSL23N15DPBF

MOSFET N-CH 150V 23A TO262

Infineon Technologies
3,660 -

RFQ

IRFSL23N15DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 23A (Tc) 10V 90mOhm @ 14A, 10V 5.5V @ 250µA 56 nC @ 10 V ±30V 1200 pF @ 25 V - 3.8W (Ta), 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRC630PBF

IRC630PBF

MOSFET N-CH 200V 9A TO220-5

Vishay Siliconix
3,320 -

RFQ

IRC630PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V Current Sensing 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1800+ Fabricantes en todo el mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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