Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR3704ZPBF

IRFR3704ZPBF

MOSFET N-CH 20V 60A DPAK

Infineon Technologies
2,067 -

RFQ

IRFR3704ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 60A (Tc) 4.5V, 10V 8.4mOhm @ 15A, 10V 2.55V @ 250µA 14 nC @ 4.5 V ±20V 1190 pF @ 10 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3715PBF

IRLU3715PBF

MOSFET N-CH 20V 54A I-PAK

Infineon Technologies
3,611 -

RFQ

IRLU3715PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU014NPBF

IRLU014NPBF

MOSFET N-CH 55V 10A I-PAK

Infineon Technologies
3,853 -

RFQ

IRLU014NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V 1V @ 250µA 7.9 nC @ 5 V ±16V 265 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU2703PBF

IRLU2703PBF

MOSFET N-CH 30V 23A IPAK

Infineon Technologies
2,433 -

RFQ

IRLU2703PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Tc) 4.5V, 10V 45mOhm @ 14A, 10V 1V @ 250µA 15 nC @ 4.5 V ±16V 450 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR014NPBF

IRLR014NPBF

MOSFET N-CH 55V 10A DPAK

Infineon Technologies
2,604 -

RFQ

IRLR014NPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 10A (Tc) 4.5V, 10V 140mOhm @ 6A, 10V 1V @ 250µA 7.9 nC @ 5 V ±16V 265 pF @ 25 V - 28W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU3303PBF

IRFU3303PBF

MOSFET N-CH 30V 33A IPAK

Infineon Technologies
3,723 -

RFQ

IRFU3303PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR120ZPBF

IRFR120ZPBF

MOSFET N-CH 100V 8.7A DPAK

Infineon Technologies
2,804 -

RFQ

IRFR120ZPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 8.7A (Tc) 10V 190mOhm @ 5.2A, 10V 4V @ 250µA 10 nC @ 10 V ±20V 310 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU024ZPBF

IRLU024ZPBF

MOSFET N-CH 55V 16A I-PAK

Infineon Technologies
2,851 -

RFQ

IRLU024ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLU9343PBF

IRLU9343PBF

MOSFET P-CH 55V 20A I-PAK

Infineon Technologies
3,844 -

RFQ

IRLU9343PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 20A (Tc) - 105mOhm @ 3.4A, 10V 1V @ 250µA 47 nC @ 10 V - 660 pF @ 50 V - - - Through Hole
IRFU4105ZPBF

IRFU4105ZPBF

MOSFET N-CH 55V 30A IPAK

Infineon Technologies
2,667 -

RFQ

IRFU4105ZPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 30A (Tc) 10V 24.5mOhm @ 18A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 740 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR024ZPBF

IRLR024ZPBF

MOSFET N-CH 55V 16A DPAK

Infineon Technologies
3,802 -

RFQ

IRLR024ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 16A (Tc) 4.5V, 10V 58mOhm @ 9.6A, 10V 3V @ 250µA 9.9 nC @ 5 V ±16V 380 pF @ 25 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU9120NPBF

IRFU9120NPBF

MOSFET P-CH 100V 6.6A IPAK

Infineon Technologies
3,007 -

RFQ

IRFU9120NPBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.6A (Tc) 10V 480mOhm @ 3.9A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU020PBF

IRFU020PBF

MOSFET N-CH 60V 14A TO251AA

Vishay Siliconix
3,631 -

RFQ

IRFU020PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 10V 100mOhm @ 8.4A, 10V 4V @ 250µA 25 nC @ 10 V ±20V 640 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFU3708PBF

IRFU3708PBF

MOSFET N-CH 30V 61A IPAK

Infineon Technologies
3,132 -

RFQ

IRFU3708PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3706PBF

IRFU3706PBF

MOSFET N-CH 20V 75A IPAK

Infineon Technologies
2,768 -

RFQ

IRFU3706PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 75A (Tc) 2.8V, 10V 9mOhm @ 15A, 10V 2V @ 250µA 35 nC @ 4.5 V ±12V 2410 pF @ 10 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU3707PBF

IRFU3707PBF

MOSFET N-CH 30V 61A IPAK

Infineon Technologies
2,444 -

RFQ

IRFU3707PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 4.5V, 10V 13mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1990 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR4343PBF

IRLR4343PBF

MOSFET N-CH 55V 26A DPAK

Infineon Technologies
3,914 -

RFQ

IRLR4343PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
64-4092PBF

64-4092PBF

MOSFET N-CH 55V 28A I-PAK

Infineon Technologies
2,239 -

RFQ

64-4092PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 28A (Tc) 4V, 10V 40mOhm @ 17A, 10V 2V @ 250µA 25 nC @ 5 V ±16V 880 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFR3708PBF

IRFR3708PBF

MOSFET N-CH 30V 61A DPAK

Infineon Technologies
3,455 -

RFQ

IRFR3708PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 61A (Tc) 2.8V, 10V 12.5mOhm @ 15A, 10V 2V @ 250µA 24 nC @ 4.5 V ±12V 2417 pF @ 15 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFU6215PBF

IRFU6215PBF

MOSFET P-CH 150V 13A IPAK

Infineon Technologies
2,558 -

RFQ

IRFU6215PBF

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 150 V 13A (Tc) 10V 295mOhm @ 6.6A, 10V 4V @ 250µA 66 nC @ 10 V ±20V 860 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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