Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLL3303TRPBF

IRLL3303TRPBF

MOSFET N-CH 30V 4.6A SOT223

Infineon Technologies
3,975 -

RFQ

IRLL3303TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 4.6A (Ta) 4.5V, 10V 31mOhm @ 4.6A, 10V 1V @ 250µA 50 nC @ 10 V ±16V 840 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRLR8103VTRPBF

IRLR8103VTRPBF

MOSFET N-CH 30V 91A DPAK

Infineon Technologies
2,615 -

RFQ

IRLR8103VTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 91A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 27 nC @ 5 V ±20V 2672 pF @ 16 V - 115W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7413TRPBF

IRF7413TRPBF

MOSFET N-CH 30V 13A 8SO

Infineon Technologies
3,150 -

RFQ

IRF7413TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V, 10V 11mOhm @ 7.3A, 10V 3V @ 250µA 79 nC @ 10 V ±20V 1800 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7220TRPBF

IRF7220TRPBF

MOSFET P-CH 14V 11A 8SO

Infineon Technologies
3,903 -

RFQ

IRF7220TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 14 V 11A (Ta) 2.5V, 4.5V 12mOhm @ 11A, 4.5V 600mV @ 250µA (Min) 125 nC @ 5 V ±12V 8075 pF @ 10 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFP064VPBF

IRFP064VPBF

MOSFET N-CH 60V 130A TO247AC

Infineon Technologies
2,067 -

RFQ

IRFP064VPBF

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 130A (Tc) 10V 5.5mOhm @ 78A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 6760 pF @ 25 V - 250W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP354PBF

IRFP354PBF

MOSFET N-CH 450V 14A TO247-3

Vishay Siliconix
2,626 -

RFQ

IRFP354PBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 450 V 14A (Tc) 10V 350mOhm @ 8.4A, 10V 4V @ 250µA 160 nC @ 10 V ±20V 2700 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFP460NPBF

IRFP460NPBF

MOSFET N-CH 500V 20A TO247-3

Vishay Siliconix
2,928 -

RFQ

IRFP460NPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 20A (Tc) 10V 240mOhm @ 12A, 10V 5V @ 250µA 124 nC @ 10 V ±30V 3540 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL3715ZSPBF

IRL3715ZSPBF

MOSFET N-CH 20V 50A D2PAK

Infineon Technologies
2,761 -

RFQ

IRL3715ZSPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL3715ZLPBF

IRL3715ZLPBF

MOSFET N-CH 20V 50A TO262

Infineon Technologies
3,021 -

RFQ

IRL3715ZLPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715ZPBF

IRL3715ZPBF

MOSFET N-CH 20V 50A TO220AB

Infineon Technologies
2,822 -

RFQ

IRL3715ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR120NTRPBF

IRLR120NTRPBF

MOSFET N-CH 100V 10A DPAK

Infineon Technologies
2,201 -

RFQ

IRLR120NTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 10A (Tc) 4V, 10V 185mOhm @ 6A, 10V 2V @ 250µA 20 nC @ 5 V ±16V 440 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQSA80ENW-T1_GE3

SQSA80ENW-T1_GE3

MOSFET N-CH 80V 18A PPAK1212-8

Vishay Siliconix
2,948 -

RFQ

SQSA80ENW-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active N-Channel MOSFET (Metal Oxide) 80 V 18A (Tc) 4.5V, 10V 21mOhm @ 10A, 10V 2.5V @ 250µA 21 nC @ 10 V ±20V 1358 pF @ 40 V - 62.5W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQS405EN-T1_GE3

SQS405EN-T1_GE3

MOSFET P-CH 12V 16A PPAK1212-8

Vishay Siliconix
2,139 -

RFQ

SQS405EN-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 12 V 16A (Tc) 2.5V, 4.5V 20mOhm @ 13.5A, 4.5V 1V @ 250µA 75 nC @ 8 V ±8V 2650 pF @ 6 V - 39W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDMA86551L

FDMA86551L

MOSFET N-CH 60V 7.5A 6MICROFET

onsemi
3,853 -

RFQ

FDMA86551L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 60 V 7.5A (Ta) 4.5V, 10V 23mOhm @ 7.5A, 10V 3V @ 250µA 17 nC @ 10 V ±20V 1235 pF @ 30 V - 2.4W (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI9407BDY-T1-GE3

SI9407BDY-T1-GE3

MOSFET P-CH 60V 4.7A 8SO

Vishay Siliconix
2,845 -

RFQ

SI9407BDY-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 60 V 4.7A (Tc) 4.5V, 10V 120mOhm @ 3.2A, 10V 3V @ 250µA 22 nC @ 10 V ±20V 600 pF @ 30 V - 2.4W (Ta), 5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMTH6009LK3-13

DMTH6009LK3-13

MOSFET N-CH 60V 14.2A/59A TO252

Diodes Incorporated
2,665 -

RFQ

DMTH6009LK3-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 14.2A (Ta), 59A (Tc) 4.5V, 10V 10mOhm @ 13.5A, 10V 2V @ 250µA 33.5 nC @ 10 V ±16V 1925 pF @ 30 V - 3.2W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
SQJ423EP-T1_GE3

SQJ423EP-T1_GE3

MOSFET P-CH 40V 55A PPAK SO-8

Vishay Siliconix
2,793 -

RFQ

SQJ423EP-T1_GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchFET® Active P-Channel MOSFET (Metal Oxide) 40 V 55A (Tc) 4.5V, 10V 14mOhm @ 10A, 10V 2.5V @ 250µA 130 nC @ 10 V ±20V 4500 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ0506NSATMA1

BSZ0506NSATMA1

MOSFET N-CH 30V 15A/40A TSDSON

Infineon Technologies
3,969 -

RFQ

BSZ0506NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 40A (Tc) 4.5V, 10V 4.4mOhm @ 20A, 10V 2V @ 250µA 15 nC @ 10 V ±20V 950 pF @ 15 V - 2.1W (Ta), 27W (Tc) -55°C ~ 150°C (TJ) Surface Mount
CSD18504Q5A

CSD18504Q5A

MOSFET N-CH 40V 15A/50A 8VSON

Texas Instruments
3,464 -

RFQ

CSD18504Q5A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk NexFET™ Active N-Channel MOSFET (Metal Oxide) 40 V 15A (Ta), 50A (Tc) 4.5V, 10V 6.6mOhm @ 17A, 10V 2.4V @ 250µA 19 nC @ 10 V ±20V 1656 pF @ 20 V - 3.1W (Ta), 77W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIR664DP-T1-GE3

SIR664DP-T1-GE3

MOSFET N-CH 60V 60A PPAK SO-8

Vishay Siliconix
3,416 -

RFQ

SIR664DP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) - 6mOhm @ 20A, 10V 2.5V @ 250µA 40 nC @ 10 V - 1750 pF @ 30 V - - - Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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