Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF1405SPBF

IRF1405SPBF

MOSFET N-CH 55V 131A D2PAK

Infineon Technologies
2,762 -

RFQ

IRF1405SPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1405LPBF

IRF1405LPBF

MOSFET N-CH 55V 131A TO262

Infineon Technologies
2,198 -

RFQ

IRF1405LPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 131A (Tc) 10V 5.3mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1404SPBF

IRF1404SPBF

MOSFET N-CH 40V 162A D2PAK

Infineon Technologies
2,704 -

RFQ

IRF1404SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 162A (Tc) 10V 4mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRL1404SPBF

IRL1404SPBF

MOSFET N-CH 40V 160A D2PAK

Infineon Technologies
2,928 -

RFQ

IRL1404SPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) 4.3V, 10V 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6600 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3415SPBF

IRF3415SPBF

MOSFET N-CH 150V 43A D2PAK

Infineon Technologies
2,527 -

RFQ

IRF3415SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFB16N50KPBF

IRFB16N50KPBF

MOSFET N-CH 500V 17A TO220AB

Vishay Siliconix
3,851 -

RFQ

IRFB16N50KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 17A (Tc) 10V 350mOhm @ 10A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2210 pF @ 25 V - 280W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFIB8N50KPBF

IRFIB8N50KPBF

MOSFET N-CH 500V 6.7A TO220-3

Vishay Siliconix
3,673 -

RFQ

IRFIB8N50KPBF

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 6.7A (Tc) 10V 350mOhm @ 4A, 10V 5V @ 250µA 89 nC @ 10 V ±30V 2160 pF @ 25 V - 45W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFB61N15DPBF

IRFB61N15DPBF

MOSFET N-CH 150V 60A TO220AB

Infineon Technologies
2,814 -

RFQ

IRFB61N15DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 60A (Tc) 10V 32mOhm @ 36A, 10V 5.5V @ 250µA 140 nC @ 10 V ±30V 3470 pF @ 25 V - 2.4W (Ta), 330W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBA1404PPBF

IRFBA1404PPBF

MOSFET N-CH 40V 206A SUPER-220

Infineon Technologies
250 -

RFQ

IRFBA1404PPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 206A (Tc) 10V 3.7mOhm @ 95A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 7360 pF @ 25 V - 300W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRL2910SPBF

IRL2910SPBF

MOSFET N-CH 100V 55A D2PAK

Infineon Technologies
3,050 -

RFQ

IRL2910SPBF

Ficha técnica

Tube,Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 55A (Tc) 4V, 10V 26mOhm @ 29A, 10V 2V @ 250µA 140 nC @ 5 V ±16V 3700 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710SPBF

IRF3710SPBF

MOSFET N-CH 100V 57A D2PAK

Infineon Technologies
2,806 -

RFQ

IRF3710SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3710LPBF

IRF3710LPBF

MOSFET N-CH 100V 57A TO262

Infineon Technologies
2,881 -

RFQ

IRF3710LPBF

Ficha técnica

Bulk,Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 57A (Tc) 10V 23mOhm @ 28A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 3130 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL2505SPBF

IRL2505SPBF

MOSFET N-CH 55V 104A D2PAK

Infineon Technologies
3,987 -

RFQ

IRL2505SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 104A (Tc) 4V, 10V 8mOhm @ 54A, 10V 2V @ 250µA 130 nC @ 5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205SPBF

IRF3205SPBF

MOSFET N-CH 55V 110A D2PAK

Infineon Technologies
3,294 -

RFQ

IRF3205SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLBA1304PPBF

IRLBA1304PPBF

MOSFET N-CH 40V 185A SUPER-220

Infineon Technologies
2,509 -

RFQ

IRLBA1304PPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 185A (Tc) 4.5V, 10V 4mOhm @ 110A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 7660 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLI3803PBF

IRLI3803PBF

MOSFET N-CH 30V 76A TO220AB FP

Infineon Technologies
2,662 -

RFQ

IRLI3803PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 76A (Tc) 4.5V, 10V 6mOhm @ 40A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 63W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3803SPBF

IRL3803SPBF

MOSFET N-CH 30V 140A D2PAK

Infineon Technologies
3,781 -

RFQ

IRL3803SPBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 30 V 140A (Tc) 4.5V, 10V 6mOhm @ 71A, 10V 1V @ 250µA 140 nC @ 4.5 V ±16V 5000 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBA90N20DPBF

IRFBA90N20DPBF

MOSFET N-CH 200V 98A SUPER-220

Infineon Technologies
2,923 -

RFQ

IRFBA90N20DPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 98A (Tc) 10V 23mOhm @ 59A, 10V 5V @ 250µA 240 nC @ 10 V ±30V 6080 pF @ 25 V - 650W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLR3715PBF

IRLR3715PBF

MOSFET N-CH 20V 54A DPAK

Infineon Technologies
3,268 -

RFQ

IRLR3715PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 54A (Tc) 4.5V, 10V 14mOhm @ 26A, 10V 3V @ 250µA 17 nC @ 4.5 V ±20V 1060 pF @ 10 V - 3.8W (Ta), 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3714ZPBF

IRLR3714ZPBF

MOSFET N-CH 20V 37A DPAK

Infineon Technologies
3,574 -

RFQ

IRLR3714ZPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 37A (Tc) 4.5V, 10V 15mOhm @ 15A, 10V 2.55V @ 250µA 7.1 nC @ 4.5 V ±20V 560 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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