Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
G75P04K

G75P04K

P40V,RD(MAX)<10M@-10V,VTH-1.2V~-

Goford Semiconductor
3,103 -

RFQ

G75P04K

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 10V 10mOhm @ 10A, 20V 2.5V @ 250µA 106 nC @ 10 V ±20V 5380 pF @ 20 V - 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
GT105N10K

GT105N10K

MOSFET, N-CH, 100V,60A,TO-252

Goford Semiconductor
2,302 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
630AT

630AT

N200V,RD(MAX)<250M@10V,RD(MAX)<3

Goford Semiconductor
100 -

RFQ

630AT

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 4.5V, 10V 250mOhm @ 1A, 10V 2.2V @ 250µA 11.8 nC @ 10 V ±20V 509 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
G70N04T

G70N04T

N40V,RD(MAX)<7M@10V,RD(MAX)<12M@

Goford Semiconductor
2,961 -

RFQ

G70N04T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 7mOhm @ 30A, 10V 2.4V @ 250µA 50 nC @ 10 V ±20V 4010 pF @ 20 V - 104W (Tc) -55°C ~ 150°C (TJ) Through Hole
GT060N04T

GT060N04T

MOSFET, N-CH, 40V,60A,TO-220

Goford Semiconductor
3,595 -

RFQ

Tube * Active - - - - - - - - - - - - - -
G45P40T

G45P40T

MOSFET, P-CH, 40V,45A,TO-220

Goford Semiconductor
3,595 -

RFQ

Tube * Active - - - - - - - - - - - - - -
G300P06T

G300P06T

MOSFET, P-CH, 60V,40A,TO-220

Goford Semiconductor
3,088 -

RFQ

Tube * Active - - - - - - - - - - - - - -
GT700P08T

GT700P08T

P-80V, -25A,RD<72M@-10V,VTH-2V~-

Goford Semiconductor
100 -

RFQ

GT700P08T

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 80 V 25A (Tc) 10V 72mOhm @ 2A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 1639 pF @ 40 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
GT088N06T

GT088N06T

N60V,RD(MAX)<9M@10V,RD(MAX)<13M@

Goford Semiconductor
3,764 -

RFQ

GT088N06T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 60A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 2.4V @ 250µA 24 nC @ 10 V ±20V 1620 pF @ 30 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
GT105N10F

GT105N10F

N100V,RD(MAX)<10.5M@10V,RD(MAX)<

Goford Semiconductor
2,458 -

RFQ

GT105N10F

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 25A (Tc) 4.5V, 10V 10.5mOhm @ 11A, 10V 2.5V @ 250µA 54 nC @ 10 V ±20V - - 20.8W (Tc) -55°C ~ 150°C (TJ) Through Hole
G65P06F

G65P06F

P-CH, -60V, 65A, RD(MAX)<18M@-10

Goford Semiconductor
2,282 -

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 6477 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
G65P06T

G65P06T

P-60V,RD(MAX)<18M@-10V,VTH-2.0V~

Goford Semiconductor
3,630 -

RFQ

G65P06T

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 65A (Tc) 10V 18mOhm @ 20A, 10V 3.5V @ 250µA 75 nC @ 10 V ±20V 5814 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
G110N06T

G110N06T

N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.

Goford Semiconductor
100 -

RFQ

G110N06T

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 110A (Tc) 4.5V, 10V 6.4mOhm @ 20A, 10V 2.5V @ 250µA 113 nC @ 10 V ±20V 5538 pF @ 25 V - 120W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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