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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G15P-12V,RD(MAX)<[email protected],RD(MAX)< Goford Semiconductor |
1,909 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 12 V | 8A (Tc) | 2.5V, 4.5V | 21mOhm @ 1A, 4.5V | 1.2V @ 250µA | 48 nC @ 4.5 V | ±8V | 2700 pF @ 10 V | - | 2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G3401LP30V,RD(MAX)<60M@-10V,RD(MAX)<70 Goford Semiconductor |
2,990 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.2A | - | 60mOhm @ 2A, 10V | 1.3V @ 250µA | 8.5 nC @ 4.5 V | ±12V | 880 pF @ 15 V | - | 1.2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
G3404LLN30V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor |
2,802 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 6A (Tc) | 4.5V, 10V | 22mOhm @ 4.2A, 10V | 2V @ 250µA | 12.2 nC @ 10 V | ±20V | 541 pF @ 15 V | - | 1.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
GT1003DN100V,RD(MAX)<130M@10V,RD(MAX)<1 Goford Semiconductor |
2,950 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A | - | 130mOhm @ 3A, 10V | 2.6V @ 250µA | 5.2 nC @ 10 V | ±20V | 212 pF @ 50 V | - | 2W | -55°C ~ 150°C (TJ) | Surface Mount |
|
G06N10N100V,RD(MAX)<240M@10V,VTH1.2V~3 Goford Semiconductor |
2,463 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 6A | - | 240mOhm @ 6A, 10V | 3V @ 250µA | 6.2 nC @ 10 V | ±20V | 190 pF @ 50 V | - | 25W | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
G35N02KN20V,RD(MAX)<[email protected],RD(MAX)<18 Goford Semiconductor |
2,360 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 35A (Tc) | 2.5V, 4.5V | 13mOhm @ 20A, 4.5V | 1.2V @ 250µA | 24 nC @ 4.5 V | ±12V | 1380 pF @ 10 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
GT095N10KN100V, RD(MAX)<10.5M@10V,RD(MAX) Goford Semiconductor |
4,972 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | GT | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4.5V, 10V | 10.5mOhm @ 35A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | 1667 pF @ 50 V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
9926N20V,RD(MAX)<[email protected],RD(MAX)<30 Goford Semiconductor |
3,980 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A | - | 25mOhm @ 4.5A, 4.5V | 1.2V @ 250µA | 10 nC @ 4.5 V | ±10V | 640 pF @ 10 V | - | 1.25W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G05P06LP60V,RD(MAX)<120M@-10V,RD(MAX)<1 Goford Semiconductor |
1,716 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Tc) | 4.5V, 10V | 120mOhm @ 4A, 10V | 2.5V @ 250µA | 37 nC @ 10 V | ±20V | 1366 pF @ 50 V | - | 4.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G1006LEN100V,RD(MAX)<150M@10V,RD(MAX)<1 Goford Semiconductor |
1,788 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A (Tc) | 4.5V, 10V | 150mOhm @ 3A, 10V | 2.2V @ 250µA | 18.2 nC @ 10 V | ±20V | 622 pF @ 50 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
03N06LN60V,RD(MAX)<100M@10V,RD(MAX)<12 Goford Semiconductor |
1,600 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 3A | - | 100mOhm @ 2A, 10V | 1.2V @ 250µA | 14.6 nC @ 30 V | ±20V | 510 pF @ 30 V | - | 1.7W | -55°C ~ 150°C (TJ) | Surface Mount |
|
G10P03P30V,RD(MAX)<[email protected],RD(MAX)<3 Goford Semiconductor |
4,950 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A | - | - | 1.5V @ 250µA | 27 nC @ 4.5 V | ±12V | 1550 pF @ 15 V | - | 20W | -55°C ~ 150°C (TJ) | Surface Mount |
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|
G100N03D5N-CH, 30V, 100A, RD(MAX)<3.5M@10 Goford Semiconductor |
5,000 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.5V @ 250µA | 38 nC @ 10 V | ±20V | 5595 pF @ 50 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
4435P30V,RD(MAX)<20M@-10V,RD(MAX)<33 Goford Semiconductor |
3,929 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 11A | - | 20mOhm @ 10A, 10V | 2.5V @ 250µA | 40 nC @ 10 V | ±20V | 2270 pF @ 15 V | - | 2.5W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G15N06KN-CH, 60V,15A,RD(MAX)<45M@10V,RD Goford Semiconductor |
2,326 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 15A (Tc) | 4.5V, 10V | 45mOhm @ 8A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 763 pF @ 30 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
|
|
G65P06D5P60V,RD(MAX)<18M@-10V,VTH-2V~-3V Goford Semiconductor |
14,815 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 5814 pF @ 25 V | - | 130W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G65P06KP60V,RD(MAX)<18M@-10V,VTH-2V~-3. Goford Semiconductor |
6,649 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 65A (Tc) | 10V | 18mOhm @ 20A, 10V | 3.5V @ 250µA | 75 nC @ 10 V | ±20V | 5814 pF @ 25 V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
|
|
G50N03KN30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
2,490 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A | - | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 16.6 nC @ 10 V | ±20V | 950 pF @ 15 V | - | 48W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G06N06SN60V,RD(MAX)<22M@10V,RD(MAX)<35M Goford Semiconductor |
2,146 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A | - | 22mOhm @ 6A, 10V | 2.4V @ 250µA | 46 nC @ 10 V | ±20V | 1600 pF @ 30 V | - | 2.1W | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G110N06KN60V,RD(MAX)<6.4M@10V,RD(MAX)<8. Goford Semiconductor |
4,159 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 110A (Tc) | 4.5V, 10V | 6.4mOhm @ 4A, 10V | 2.5V @ 250µA | 113 nC @ 10 V | ±20V | 5538 pF @ 25 V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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