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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GC11N65KN650V,RD(MAX)<360M@10V,VTH2.5V~4 Goford Semiconductor |
2,490 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | 21 nC @ 10 V | ±30V | 901 pF @ 50 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G2305P20V,RD(MAX)<[email protected],RD(MAX)<7 Goford Semiconductor |
3,423 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4.8A (Ta) | 2.5V, 4.5V | 50mOhm @ 4.1A, 4.5V | 1V @ 250µA | 7.8 nC @ 4.5 V | ±12V | - | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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G2304MOSFET N-CH 30V 3.6A SOT-23 Goford Semiconductor |
3,160 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 3.6A (Ta) | 4.5V, 10V | 58mOhm @ 3.6A, 10V | 2.2V @ 250µA | 4 nC @ 10 V | ±20V | 230 pF @ 15 V | Standard | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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2301HP30V,RD(MAX)<[email protected],RD(MAX)< Goford Semiconductor |
2,217 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 2A (Ta) | 4.5V, 10V | 125mOhm @ 3A, 10V | 2V @ 250µA | 12 nC @ 2.5 V | ±12V | 405 pF @ 10 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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3415AP20V,RD(MAX)<[email protected],RD(MAX)<6 Goford Semiconductor |
2,555 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 4A (Ta) | 2.5V, 4.5V | 45mOhm @ 4A, 4.5V | 900mV @ 250µA | 12 nC @ 4.5 V | ±10V | 950 pF @ 10 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G3035LP30V,RD(MAX)<59M@-10V,RD(MAX)<75 Goford Semiconductor |
3,077 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.1A (Ta) | 4.5V, 10V | 59mOhm @ 2.1A, 10V | 2V @ 250µA | 12.5 nC @ 10 V | ±20V | 650 pF @ 15 V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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G7P03LP30V,RD(MAX)<23M@-10V,RD(MAX)<34 Goford Semiconductor |
3,212 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Tc) | 4.5V, 10V | 23mOhm @ 3A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1500 pF @ 15 V | - | 1.9W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G6P06P60V,RD(MAX)<96M@-10V,RD(MAX)<14 Goford Semiconductor |
8,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Tc) | 4.5V, 10V | 96mOhm @ 4A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 930 pF @ 30 V | - | 4.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G12P04KP40V,RD(MAX)<35M@-10V,RD(MAX)<45 Goford Semiconductor |
2,522 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 12A (Tc) | 4.5V, 10V | 35mOhm @ 6A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 930 pF @ 20 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G2K3N10HMOSFET, N-CH,100V, 2A,SOT-223 Goford Semiconductor |
3,787 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
|
G48N03D3N30V,RD(MAX)<6M@10V,RD(MAX)<8M@4 Goford Semiconductor |
3,645 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 48A (Tc) | 4.5V, 10V | 6mOhm @ 20A, 10V | 2.4V @ 250µA | 38 nC @ 10 V | ±20V | 1784 pF @ 15 V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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G07P04SP40V,RD(MAX)<18M@-10V,RD(MAX)<22 Goford Semiconductor |
3,383 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 7A (Tc) | 4.5V, 10V | 18mOhm @ 7A, 10V | 2.5V @ 250µA | 24 nC @ 10 V | ±20V | 1750 pF @ 20 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G26P04D5P40V,RD(MAX)<18M@-10V,RD(MAX)<22 Goford Semiconductor |
9,591 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 26A (Tc) | 4.5V, 10V | 18mOhm @ 12A, 10V | 2.5V @ 250µA | 45 nC @ 10 V | ±20V | 2479 pF @ 20 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G33N03D52N30V, 33A,RD<13M@10V,VTH1V~3V, D Goford Semiconductor |
5,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 33A (Tc) | 4.5V, 10V | 13mOhm @ 16A, 10V | 3V @ 250µA | 17.5 nC @ 10 V | ±20V | 782 pF @ 15 V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G400P06SMOSFET, P-CH, 60V,6A,SOP-8 Goford Semiconductor |
3,418 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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G20P06KP-60V, -20A,RD<45M@-10V,VTH-2V~- Goford Semiconductor |
2,500 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 20A (Tc) | 10V | 45mOhm @ 12A, 10V | 3.5V @ 250µA | 46 nC @ 10 V | ±20V | 3430 pF @ 30 V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G18P03D3P30V,RD(MAX)<10M@-10V,RD(MAX)<15 Goford Semiconductor |
3,876 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Tc) | 4.5V, 10V | 10mOhm @ 10A, 10V | 2.5V @ 250µA | 30 nC @ 10 V | ±20V | 2060 pF @ 15 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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GT060N04KMOSFET, N-CH, 40V,54A,TO-252 Goford Semiconductor |
2,874 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | |
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GT095N10SN100V, 21A,RD<9.5M@10V,VTH1.2V~2 Goford Semiconductor |
4,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 21A (Tc) | 4.5V, 10V | 9.5mOhm @ 20A, 10V | 2.6V @ 250µA | 29.4 nC @ 10 V | ±20V | 2131 pF @ 50 V | - | 8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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GT090N06KMOSFET, N-CH, 60V,45A,TO-252 Goford Semiconductor |
3,733 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | * | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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