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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G6N02LMOSFET N-CH 20V 6A SOT-23-3L Goford Semiconductor |
3,410 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 2.5V, 4.5V | 11.3mOhm @ 3A, 4.5V | 0.9V @ 250µA | 12.5 nC @ 10 V | ±12V | 1140 pF @ 10 V | Standard | 1.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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3400LN30V,RD(MAX)<27M@10V,RD(MAX)<33M Goford Semiconductor |
3,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 5.6A | - | 59mOhm @ 2.8A, 2.5V | 1.4V @ 250µA | 9.5 nC @ 4.5 V | ±12V | 820 pF @ 15 V | - | 1.4W | -55°C ~ 150°C (TJ) | Surface Mount |
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G1002LN100V,RD(MAX)<250M@10V,VTH1.2V~2 Goford Semiconductor |
3,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 2A | - | 250mOhm @ 2A, 10V | 2V @ 250µA | 10 nC @ 10 V | ±20V | 413 pF @ 50 V | - | 1.3W | -55°C ~ 150°C (TJ) | Surface Mount |
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|
06N06LN60V,RD(MAX)<42M@10V,RD(MAX)<46M Goford Semiconductor |
5,520 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5.5A | - | 42mOhm @ 3A, 10V | 2.5V @ 250µA | 2.4 nC @ 10 V | ±20V | 765 pF @ 30 V | - | 960mW | -55°C ~ 150°C (TJ) | Surface Mount |
|
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G01N20LEN200V,RD(MAX)<850M@10V,RD(MAX)<9 Goford Semiconductor |
8,720 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 1.7A (Tc) | 4.5V, 10V | 850mOhm @ 1.7A, 10V | 2.5V @ 250µA | 12 nC @ 10 V | ±20V | 580 pF @ 25 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G20N03D2N30V,RD(MAX)<24M@10V,RD(MAX)<29M Goford Semiconductor |
3,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 24mOhm @ 5A, 10V | 2V @ 250µA | 20 nC @ 10 V | ±20V | 873 pF @ 30 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G1003AN100V,RD(MAX)<210M@10V,RD(MAX)<2 Goford Semiconductor |
3,937 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 3A (Tc) | 4.5V, 10V | 210mOhm @ 3A, 10V | 3V @ 250µA | 18.2 nC @ 10 V | ±20V | 622 pF @ 25 V | - | 5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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G09P02LP20V,RD(MAX)<[email protected],RD(MAX)<3 Goford Semiconductor |
3,278 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 9A (Tc) | 2.5V, 4.5V | 23mOhm @ 1A, 4.5V | 1.2V @ 250µA | 15 nC @ 4.5 V | ±12V | 620 pF @ 10 V | - | 2.2W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G7P03SP30V,RD(MAX)<22M@-10V,RD(MAX)<33 Goford Semiconductor |
4,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Tc) | 4.5V, 10V | 22mOhm @ 3A, 10V | 2V @ 250µA | 24.5 nC @ 10 V | ±20V | 1253 pF @ 15 V | - | 2.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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G33N03SN30V,RD(MAX)<12M@10V,RD(MAX)<13M Goford Semiconductor |
3,996 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 13A (Tc) | 4.5V, 10V | 12mOhm @ 8A, 10V | 1.1V @ 250µA | 13 nC @ 5 V | ±20V | 1550 pF @ 15 V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G2012N20V,RD(MAX)<[email protected],RD(MAX)<18 Goford Semiconductor |
3,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Tc) | 2.5V, 4.5V | 12mOhm @ 5A, 4.5V | 1V @ 250µA | 29 nC @ 10 V | ±10V | 1255 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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G11SP-20V,RD(MAX)<[email protected],RD(MAX Goford Semiconductor |
4,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | G | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 11A (Tc) | 2.5V, 4.5V | 18.4mOhm @ 1A, 4.5V | 1.1V @ 250µA | 47 nC @ 10 V | ±12V | 2455 pF @ 10 V | - | 3.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
G28N03D3N30V,RD(MAX)<12M@10V,RD(MAX)<18M Goford Semiconductor |
5,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 28A (Tc) | 4.5V, 10V | 12mOhm @ 16A, 10V | 2.5V @ 250µA | 15 nC @ 10 V | ±20V | 891 pF @ 15 V | - | 20.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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G08N06SN60V, RD(MAX)<30M@10V,RD(MAX)<40 Goford Semiconductor |
4,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | G | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 4.5V, 10V | 30mOhm @ 3A, 10V | 2.5V @ 250µA | 22 nC @ 10 V | ±20V | 979 pF @ 30 V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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G30N03D3N30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
5,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A | - | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 13 nC @ 10 V | ±20V | 825 pF @ 15 V | - | 24W | -55°C ~ 150°C (TJ) | Surface Mount |
|
G20N03KN30V,RD(MAX)<20M@10V,RD(MAX)<24M Goford Semiconductor |
4,765 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 20mOhm @ 10A, 10V | 2.5V @ 250µA | 18 nC @ 10 V | ±20V | 923 pF @ 15 V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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G10N10AN100V,RD(MAX)130mOHM@10V,TO-252 Goford Semiconductor |
4,851 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta) | 4.5V, 10V | 130mOhm @ 2A, 10V | 3V @ 250µA | 90 nC @ 10 V | ±20V | 690 pF @ 25 V | - | 28W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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|
G12P03D3P30V,RD(MAX)<20M@-10V,RD(MAX)<26 Goford Semiconductor |
9,060 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 12A (Tc) | 4.5V, 10V | 20mOhm @ 6A, 10V | 2V @ 250µA | 24.5 nC @ 10 V | ±20V | 1253 pF @ 15 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
|
G16P03D3P30V,RD(MAX)<12M@-10V,RD(MAX)<18 Goford Semiconductor |
9,666 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Tc) | 4.5V, 10V | 12mOhm @ 10A, 10V | 2.5V @ 250µA | 35 nC @ 10 V | ±20V | 1995 pF @ 15 V | - | 3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G50N03D5N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M Goford Semiconductor |
5,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 4.5mOhm @ 20A, 10V | 2.4V @ 250µA | 38.4 nC @ 10 V | ±20V | 1784 pF @ 15 V | - | 20W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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