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Transistores - FET, MOSFET - Sencillos
| Foto: | Número de parte del fabricante | Disponibilidad | Precio | Cantidad | Ficha técnica | Packaging | Series | ProductStatus | FETType | Technology | DraintoSourceVoltage(Vdss) | Current-ContinuousDrain(Id)@25°C | DriveVoltage(MaxRdsOnMinRdsOn) | RdsOn(Max)@IdVgs | Vgs(th)(Max)@Id | GateCharge(Qg)(Max)@Vgs | Vgs(Max) | InputCapacitance(Ciss)(Max)@Vds | FETFeature | PowerDissipation(Max) | OperatingTemperature | MountingType |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G50N03JN30V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
4,905 | - |
RFQ |
Ficha técnica |
Tube | - | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 65A (Tc) | 4.5V, 10V | 7mOhm @ 20A, 10V | 2.5V @ 250µA | 16.6 nC @ 10 V | ±20V | 1255 pF @ 15 V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole |
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G45P02D3P20V,RD(MAX)<[email protected],RD(MAX)< Goford Semiconductor |
4,908 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 45A | - | 9.5mOhm @ 10A, 4.5V | 1V @ 250µA | 55 nC @ 4.5 V | ±12V | 3500 pF @ 10 V | - | 80W | -55°C ~ 150°C (TJ) | Surface Mount |
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G15N10CN100V,RD(MAX)<110M@10V,RD(MAX)<1 Goford Semiconductor |
2,473 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 15A (Tc) | 4.5V, 10V | 110mOhm @ 8A, 10V | 3V @ 250µA | 22 nC @ 10 V | ±20V | - | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G23N06KN60V,RD(MAX)<35M@10V,RD(MAX)<45M Goford Semiconductor |
2,396 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 23A | - | 35mOhm @ 20A, 10V | 2.5V @ 250µA | 25 nC @ 10 V | ±20V | 590 pF @ 15 V | - | 38W | -55°C ~ 150°C (TJ) | Surface Mount |
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G15P04KP40V,RD(MAX)<39M@-10V,RD(MAX)<70 Goford Semiconductor |
2,108 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 15A | - | 39mOhm @ 10A, 10V | 3V @ 250µA | 25 nC @ 10 V | ±20V | 930 pF @ 20 V | - | 50W | -55°C ~ 150°C (TJ) | Surface Mount |
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G12P10KP100V,RD(MAX)<200M@-10V,RD(MAX)< Goford Semiconductor |
2,212 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 12A | - | 200mOhm @ 6A, 10V | 3V @ 250µA | 33 nC @ 10 V | ±20V | 1720 pF @ 50 V | - | 57W | -55°C ~ 150°C (TJ) | Surface Mount |
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GT52N10D5N100V,RD(MAX)<7.5M@10V,RD(MAX)<1 Goford Semiconductor |
12,635 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 71A (Tc) | 4.5V, 10V | 7.5mOhm @ 50A, 10V | 2.5V @ 250µA | 44.5 nC @ 10 V | ±20V | 2626 pF @ 50 V | - | 79W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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GT100N12D5N120V,RD(MAX)<10M@10V,VTH2.5V~3. Goford Semiconductor |
10,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 120 V | 70A | - | 10mOhm @ 35A, 10V | 3.5V @ 250µA | 50 nC @ 10 V | ±20V | 3050 pF @ 60 V | - | 120W | -55°C ~ 150°C (TJ) | Surface Mount |
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G08P06D3P60V,RD(MAX)<52M@-10V,VTH-2V~-3. Goford Semiconductor |
2,158 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Tc) | 10V | 52mOhm @ 6A, 10V | 3.5V @ 250µA | 25 nC @ 10 V | ±20V | 2972 pF @ 30 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
|
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G60N04KN40V,RD(MAX)<7M@10V,RD(MAX)<12M@ Goford Semiconductor |
2,490 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 60A | - | 7mOhm @ 30A, 10V | 2.5V @ 250µA | 29 nC @ 10 V | ±20V | 1800 pF @ 20 V | - | 65W | -55°C ~ 150°C (TJ) | Surface Mount |
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18N10N100V,RD(MAX)<53M@10V,RD(MAX)<63 Goford Semiconductor |
2,460 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 25A | - | 53mOhm @ 10A, 10V | 3V @ 250µA | 28 nC @ 10 V | ±20V | 1318 pF @ 50 V | - | 62.5W | -55°C ~ 150°C (TJ) | Surface Mount |
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60N06N60V,RD(MAX)<17M@10V,RD(MAX)<21M Goford Semiconductor |
1,832 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A | - | 17mOhm @ 5A, 10V | 2V @ 250µA | 50 nC @ 10 V | ±20V | 2050 pF @ 30 V | - | 85W | -55°C ~ 150°C (TJ) | Surface Mount |
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630AN200V,RD(MAX)<280M@10V,VTH1V~3V Goford Semiconductor |
2,483 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 11A | 10V | 280mOhm @ 4.5A, 10V | 3V @ 250µA | 11.8 nC @ 10 V | ±20V | 509 pF @ 25 V | - | 83W | -55°C ~ 150°C (TJ) | |
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G20P08KP-80V,RD(MAX)<62M@-10V,RD(MAX)<7 Goford Semiconductor |
1,426 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 80 V | 20A (Tc) | 4.5V, 10V | 62mOhm @ 10A, 10V | 2.5V @ 250µA | 48 nC @ 10 V | ±20V | 3500 pF @ 30 V | - | 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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GT025N06D5N60V,RD(MAX)<2.7M@10V,RD(MAX)<3. Goford Semiconductor |
10,020 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 95A (Tc) | 4.5V, 10V | 2.7mOhm @ 20A, 10V | 2.5V @ 250µA | 93 nC @ 10 V | ±20V | 5950 pF @ 25 V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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G20P10KEP-CH, -100V, 20A, RD(MAX)<116M@- Goford Semiconductor |
2,320 | - |
RFQ |
Tape & Reel (TR),Cut Tape (CT) | - | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 20A (Tc) | 10V | 116mOhm @ 16A, 10V | 3V @ 250µA | 70 nC @ 10 V | ±20V | 3354 pF @ 50 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | |
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GT55N06D5N60V,RD(MAX)<8M@10V,RD(MAX)<13M@ Goford Semiconductor |
2,231 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 53A (Ta) | 4.5V, 10V | 9mOhm @ 14A, 10V | 2.5V @ 250µA | 31 nC @ 10 V | ±20V | 1988 pF @ 30 V | - | 70W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount |
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GT650N15KN150V,RD(MAX)<65M@10V,VTH2.5V~4. Goford Semiconductor |
2,460 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 20A (Tc) | 10V | 65mOhm @ 10A, 10V | 4.5V @ 250µA | 12 nC @ 10 V | ±20V | 600 pF @ 75 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount |
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G86N06KN60V,RD(MAX)<8.4M@10V,VTH2V~4V Goford Semiconductor |
2,454 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 68A | - | 8.4mOhm @ 4A, 10V | 4V @ 250µA | 77 nC @ 10 V | ±20V | 2860 pF @ 25 V | - | 88W | -55°C ~ 175°C (TJ) | |
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GT095N10D5N100V,RD(MAX)<11M@10V,RD(MAX)<15 Goford Semiconductor |
4,908 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | - | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 55A (Tc) | 4.5V, 10V | 11mOhm @ 35A, 10V | 2.5V @ 250µA | 54 nC @ 10 V | ±20V | - | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount |
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