Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF820ASTRR

IRF820ASTRR

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
3,753 -

RFQ

IRF820ASTRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF820L

IRF820L

MOSFET N-CH 500V 2.5A I2PAK

Vishay Siliconix
2,403 -

RFQ

IRF820L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF820STRL

IRF820STRL

MOSFET N-CH 500V 2.5A D2PAK

Vishay Siliconix
2,758 -

RFQ

IRF820STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) 10V 3Ohm @ 1.5A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 360 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF830STRR

IRF830STRR

MOSFET N-CH 500V 4.5A D2PAK

Vishay Siliconix
2,583 -

RFQ

IRF830STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 4.5A (Tc) 10V 1.5Ohm @ 2.7A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 610 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840AL

IRF840AL

MOSFET N-CH 500V 8A I2PAK

Vishay Siliconix
2,638 -

RFQ

IRF840AL

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF840ASTRL

IRF840ASTRL

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
3,440 -

RFQ

IRF840ASTRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840ASTRR

IRF840ASTRR

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
3,287 -

RFQ

IRF840ASTRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1018 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840LCSTRL

IRF840LCSTRL

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,113 -

RFQ

IRF840LCSTRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840LCSTRR

IRF840LCSTRR

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
2,707 -

RFQ

IRF840LCSTRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840STRL

IRF840STRL

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
3,195 -

RFQ

IRF840STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF840STRR

IRF840STRR

MOSFET N-CH 500V 8A D2PAK

Vishay Siliconix
3,852 -

RFQ

IRF840STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 8A (Tc) 10V 850mOhm @ 4.8A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9510L

IRF9510L

MOSFET P-CH 100V 4A I2PAK

Vishay Siliconix
2,834 -

RFQ

IRF9510L

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF9510STRL

IRF9510STRL

MOSFET P-CH 100V 4A D2PAK

Vishay Siliconix
3,134 -

RFQ

IRF9510STRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9510STRR

IRF9510STRR

MOSFET P-CH 100V 4A D2PAK

Vishay Siliconix
3,168 -

RFQ

IRF9510STRR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 4A (Tc) 10V 1.2Ohm @ 2.4A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9520L

IRF9520L

MOSFET P-CH 100V 6.8A I2PAK

Vishay Siliconix
2,437 -

RFQ

IRF9520L

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF9520STRR

IRF9520STRR

MOSFET P-CH 100V 6.8A D2PAK

Vishay Siliconix
2,472 -

RFQ

IRF9520STRR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 600mOhm @ 4.1A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9530L

IRF9530L

MOSFET P-CH 100V 12A I2PAK

Vishay Siliconix
2,048 -

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF9530STRR

IRF9530STRR

MOSFET P-CH 100V 12A D2PAK

Vishay Siliconix
3,976 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540L

IRF9540L

MOSFET P-CH 100V 19A I2PAK

Vishay Siliconix
3,409 -

RFQ

IRF9540L

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF9540STRR

IRF9540STRR

MOSFET P-CH 100V 19A D2PAK

Vishay Siliconix
3,353 -

RFQ

IRF9540STRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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