Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFBC40LCSTRR

IRFBC40LCSTRR

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
2,091 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40STRL

IRFBC40STRL

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
2,660 -

RFQ

IRFBC40STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40STRR

IRFBC40STRR

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,026 -

RFQ

IRFBC40STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBE20L

IRFBE20L

MOSFET N-CH 800V 1.8A I2PAK

Vishay Siliconix
3,149 -

RFQ

IRFBE20L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRFBE20S

IRFBE20S

MOSFET N-CH 800V 1.8A D2PAK

Vishay Siliconix
2,668 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
IRFBE20STRL

IRFBE20STRL

MOSFET N-CH 800V 1.8A D2PAK

Vishay Siliconix
3,892 -

RFQ

IRFBE20STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
IRFBE20STRR

IRFBE20STRR

MOSFET N-CH 800V 1.8A D2PAK

Vishay Siliconix
3,458 -

RFQ

IRFBE20STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
IRFBE30L

IRFBE30L

MOSFET N-CH 800V 4.1A I2PAK

Vishay Siliconix
3,613 -

RFQ

IRFBE30L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30S

IRFBE30S

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix
3,693 -

RFQ

IRFBE30S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBE30STRL

IRFBE30STRL

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix
3,625 -

RFQ

IRFBE30STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBE30STRR

IRFBE30STRR

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix
3,045 -

RFQ

IRFBE30STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF20STRL

IRFBF20STRL

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
2,348 -

RFQ

IRFBF20STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF20STRR

IRFBF20STRR

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
2,609 -

RFQ

IRFBF20STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF30L

IRFBF30L

MOSFET N-CH 900V 3.6A I2PAK

Vishay Siliconix
3,998 -

RFQ

IRFBF30L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRFBF30S

IRFBF30S

MOSFET N-CH 900V 3.6A D2PAK

Vishay Siliconix
2,165 -

RFQ

IRFBF30S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF30STRL

IRFBF30STRL

MOSFET N-CH 900V 3.6A D2PAK

Vishay Siliconix
2,832 -

RFQ

IRFBF30STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF30STRR

IRFBF30STRR

MOSFET N-CH 900V 3.6A D2PAK

Vishay Siliconix
3,662 -

RFQ

IRFBF30STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 900 V 3.6A (Tc) 10V 3.7Ohm @ 2.2A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1200 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBG20L

IRFBG20L

MOSFET N-CH 1000V 1.4A I2PAK

Vishay Siliconix
3,816 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 1000 V 1.4A (Ta) 10V 11Ohm @ 840mA, 10V 4V @ 250µA 38 nC @ 10 V ±20V 500 pF @ 25 V - - - Through Hole
IRFI520G

IRFI520G

MOSFET N-CH 100V 7.2A TO220-3

Vishay Siliconix
2,942 -

RFQ

IRFI520G

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.2A (Tc) 10V 270mOhm @ 4.3A, 10V 4V @ 250µA 16 nC @ 10 V ±20V 360 pF @ 25 V - 37W (Tc) -55°C ~ 175°C (TJ) Through Hole
SISH472DN-T1-GE3

SISH472DN-T1-GE3

MOSFET N-CH 30V 15A/20A PPAK

Vishay Siliconix
472 -

RFQ

SISH472DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 20A (Tc) 4.5V, 10V 8.9mOhm @ 15A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 997 pF @ 15 V - 3.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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