Transistores - FET, MOSFET - Sencillos

Foto: Número de parte del fabricante Disponibilidad Precio Cantidad Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9620PBF-BE3

IRF9620PBF-BE3

MOSFET P-CH 200V 3.5A TO220AB

Vishay Siliconix
797 -

RFQ

IRF9620PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) - 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP6N80AE-GE3

SIHP6N80AE-GE3

MOSFET N-CH 800V 5A TO220AB

Vishay Siliconix
980 -

RFQ

SIHP6N80AE-GE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5A (Tc) - 950mOhm @ 2A, 10V 4V @ 250µA 22.5 nC @ 10 V ±30V 422 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ24PBF-BE3

IRLZ24PBF-BE3

MOSFET N-CH 60V 17A TO220AB

Vishay Siliconix
923 -

RFQ

IRLZ24PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Tc) - 100mOhm @ 10A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF820APBF-BE3

IRF820APBF-BE3

MOSFET N-CH 500V 2.5A TO220AB

Vishay Siliconix
714 -

RFQ

IRF820APBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 2.5A (Tc) - 3Ohm @ 1.5A, 10V 4.5V @ 250µA 17 nC @ 10 V ±30V 340 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF624PBF-BE3

IRF624PBF-BE3

MOSFET N-CH 250V 4.4A TO220AB

Vishay Siliconix
1,000 -

RFQ

IRF624PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 4.4A (Tc) - 1.1Ohm @ 2.6A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 260 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL620PBF-BE3

IRL620PBF-BE3

MOSFET N-CH 200V 5.2A TO220AB

Vishay Siliconix
980 -

RFQ

IRL620PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 5.2A (Tc) - 800mOhm @ 3.1A, 5V 2V @ 250µA 16 nC @ 5 V ±10V 360 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z34PBF-BE3

IRF9Z34PBF-BE3

MOSFET P-CH 60V 18A TO220AB

Vishay Siliconix
123 -

RFQ

IRF9Z34PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) - 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
SIHP12N50E-BE3

SIHP12N50E-BE3

N-CHANNEL 500V

Vishay Siliconix
1,000 -

RFQ

SIHP12N50E-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 500 V 10.5A (Tc) 10V 380mOhm @ 6A, 10V 4V @ 250µA 50 nC @ 10 V ±30V 886 pF @ 100 V - 114W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ34PBF-BE3

IRFZ34PBF-BE3

MOSFET N-CH 60V 30A TO220AB

Vishay Siliconix
921 -

RFQ

IRFZ34PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) - 50mOhm @ 18A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1200 pF @ 25 V - 88W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ20PBF-BE3

IRFZ20PBF-BE3

MOSFET N-CH 50V 15A TO220AB

Vishay Siliconix
671 -

RFQ

IRFZ20PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) - 100mOhm @ 10A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 860 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24PBF-BE3

IRF9Z24PBF-BE3

MOSFET P-CH 60V 11A TO220AB

Vishay Siliconix
953 -

RFQ

IRF9Z24PBF-BE3

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) - 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 60W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFBE30PBF-BE3

IRFBE30PBF-BE3

MOSFET N-CH 800V 4.1A TO220AB

Vishay Siliconix
944 -

RFQ

IRFBE30PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) - 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRL630PBF-BE3

IRL630PBF-BE3

MOSFET N-CH 200V 9A TO220AB

Vishay Siliconix
1,000 -

RFQ

IRL630PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) - 400mOhm @ 5.4A, 5V 2V @ 250µA 40 nC @ 10 V ±10V 1100 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP14N60E-BE3

SIHP14N60E-BE3

N-CHANNEL 600V

Vishay Siliconix
995 -

RFQ

SIHP14N60E-BE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V 309mOhm @ 7A, 10V 4V @ 250µA 64 nC @ 10 V ±30V 1205 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBF20PBF-BE3

IRFBF20PBF-BE3

MOSFET N-CH 900V 1.7A TO220AB

Vishay Siliconix
975 -

RFQ

IRFBF20PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) - 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP6N80E-BE3

SIHP6N80E-BE3

N-CHANNEL 800V

Vishay Siliconix
1,000 -

RFQ

SIHP6N80E-BE3

Ficha técnica

Tube E Active N-Channel MOSFET (Metal Oxide) 800 V 5.4A (Tc) 10V 940mOhm @ 3A, 10V 4V @ 250µA 44 nC @ 10 V ±30V 827 pF @ 100 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40APBF-BE3

IRFBC40APBF-BE3

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
721 -

RFQ

IRFBC40APBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) - 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SIHP12N60E-BE3

SIHP12N60E-BE3

MOSFET N-CH 600V 12A TO220AB

Vishay Siliconix
994 -

RFQ

SIHP12N60E-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 12A (Tc) - 380mOhm @ 6A, 10V 4V @ 250µA 58 nC @ 10 V ±30V 937 pF @ 100 V - 147W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFZ40PBF-BE3

IRFZ40PBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
766 -

RFQ

IRFZ40PBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44RPBF-BE3

IRFZ44RPBF-BE3

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
966 -

RFQ

IRFZ44RPBF-BE3

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) - 28mOhm @ 31A, 10V 4V @ 250µA 67 nC @ 10 V ±20V 1900 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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